KRI Kaufman Ion Source KDC 100

Overview

The KRI Kaufman Ion Source KDC 100 is a high-reliability, medium-aperture broad-beam ion source engineered for industrial-scale thin-film processing and surface engineering applications in semiconductor manufacturing, optical coating, and advanced materials R&D. Based on the classic Kaufman-type discharge principle—employing thermionic electron emission, DC magnetic confinement, and electrostatic acceleration through a multi-grid extraction system—the KDC 100 delivers stable, controllable ion beams with precise energy and current regulation. Its dual-filament cathode architecture enhances operational longevity and redundancy, while the OptiBeam™ self-aligning grid assembly ensures consistent beam collimation and minimizes grid erosion over extended duty cycles. Designed for seamless integration into large-area deposition platforms—including sputter coaters, evaporation systems, and ion-assisted deposition (IAD) chambers—the KDC 100 operates under high-vacuum conditions (typically ≤1×10⁻⁷ Torr) and supports both inert and reactive process chemistries.

Key Features

• Dual thermionic cathodes with independent filament power control for extended service life and fail-safe operation
• Self-aligning, 12 cm diameter three-grid OptiBeam™ extraction system optimized for beam uniformity and long-term stability
• Adjustable ion energy range from 100 eV to 1200 eV with fine resolution via precision anode and accelerator voltage control
• Ion current output exceeding 400 mA at nominal operating conditions, scalable with gas flow and pressure
• Modular neutralizer options—including Sidewinder filament, LFN-2000, and standard hot-filament types—to ensure space-charge compensation across varying beam currents and geometries
• Four-channel mass-flow-controlled gas inlet manifold for sequential or simultaneous delivery of inert (Ar, Xe), reactive (O₂, N₂, CF₄), or mixed process gases
• Quick-release or motorized movable flange mounting compatible with ISO-K, CF, and ConFlat vacuum interfaces
• Optional motorized tilt stage enabling ±15° beam angle adjustment for oblique incidence IBE or tailored ion flux distribution

Sample Compatibility & Compliance

The KDC 100 is routinely deployed in processes involving metallic, dielectric, and compound semiconductor substrates—including Si, GaAs, InP, SiO₂, Al₂O₃, TiN, and perovskite thin films. It complies with standard vacuum interface protocols for Class 100 cleanroom-compatible UHV systems and meets mechanical and electrical safety requirements per UL 61010-1 and CE directives. While not intrinsically certified for specific regulatory frameworks (e.g., FDA 21 CFR Part 11), its analog/digital I/O architecture supports integration into GLP/GMP-compliant process control environments when paired with validated PLC or SCADA systems. All internal components are constructed from oxygen-free high-conductivity copper, molybdenum, and stainless steel—ensuring compatibility with aggressive halogen-based chemistries and minimizing metallic contamination risk.

Software & Data Management

The KDC 100 operates via analog voltage inputs (0–10 V) for real-time control of filament current, anode voltage, accelerator voltage, and neutralizer bias. For automated operation, it integrates with industry-standard motion and process controllers (e.g., Parker, Beckhoff, or Delta Tau) using RS-232/RS-485 or Ethernet/IP protocols. Optional KRI-supplied LabVIEW-based control software provides synchronized logging of beam parameters—including ion current, voltage setpoints, gas flow rates, and thermal status—with timestamped CSV export for traceability. Audit trails, user access levels, and parameter lockout functions can be implemented at the host system level to support ISO 9001 and IATF 16949 quality management workflows.

Applications

• Ion Beam Assisted Deposition (IBAD) for stress control and enhanced adhesion in optical coatings and wear-resistant films
• Ion Beam Sputter Deposition (IBSD) of ultra-pure, stoichiometric multilayer stacks (e.g., HR coatings, EUV mask blanks)
• Ion Beam Etching (IBE) with sub-5 nm depth resolution for pattern transfer, mask trimming, and surface smoothing
• Surface activation and pre-cleaning prior to ALD or MBE growth—particularly for III–V and 2D material substrates
• Ion implantation simulation and radiation damage studies in semiconductor defect engineering
• Low-damage surface modification of polymers, glasses, and flexible electronics substrates

FAQ

What vacuum conditions are required for stable KDC 100 operation?

The source requires a base pressure ≤1×10⁻⁷ Torr and an operating pressure between 5×10⁻⁵ and 2×10⁻⁴ Torr during beam extraction—dependent on gas type and flow rate.
Can the KDC 100 be operated with reactive gases such as oxygen or nitrogen?

Yes—its grid and cathode materials are selected for compatibility with O₂, N₂, CF₄, and other reactive species; however, extended exposure may reduce filament lifetime and necessitate more frequent maintenance.
Is remote monitoring and automation supported?

Yes—via analog I/O, RS-485 Modbus RTU, or optional Ethernet/IP interface; full integration with SECS/GEM or PVSS is achievable with appropriate middleware.
What neutralizer configuration is recommended for high-current (>300 mA) Ar⁺ operation?

The LFN-2000 hollow-cathode neutralizer is preferred for sustained high-current operation due to its higher electron emission capacity and reduced thermal drift.
Does KRI provide installation support and process validation documentation?

KRI offers factory acceptance testing (FAT) reports, mechanical drawings, vacuum compatibility data sheets, and application notes; on-site commissioning and IQ/OQ documentation are available under separate service agreement.