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| Brand | UniTemp |
|---|---|
| Origin | USA |
| Model | 2Z-HVS-200 |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Max Temperature | 450 °C |
| Programmable Steps | 100 per Recipe, 20 Recipes Stored |
| Optical Process Monitoring | 360° Quartz Viewing Cylinder |
| Cooling | Active Water-Cooled Lower Platen + External Closed-Loop Chiller Recommended (Optional Accessory WC-I) |
| Controller | Siemens SIMATIC® S7-1200 PLC with HMI Interface |
| Data Logging | Real-Time Temperature, Pressure, Gas Flow, and Time Stamping |
| Brand | UniTemp |
|---|---|
| Model | PTP-300 |
| Origin | Germany |
| Chamber Dimensions (Process Zone) | 305 mm × 305 mm × 25 mm |
| Chamber Height | 35 mm |
| Chamber Material | Anodized Aluminum or Optional Quartz Glass |
| External Dimensions | 600 mm × 1850 mm × 880 mm (W × D × H) |
| Gas Inlets | 2 × MFC-controlled lines |
| Vacuum Interface | DN25 KF flange |
| Microwave Generator | 2.45 GHz, 100–600 W (water-cooled, optional chiller) |
| Heating System | 24 IR lamps, total 18 kW |
| Control System | B&R SPS controller PP420 with LCD interface |
| Power Supply | 3/N/PE, AC 50/60 Hz, 230/400 V |
| Brand | UniTemp |
|---|---|
| Origin | Germany |
| Model | RTP-200-HV |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 200 mm (8-inch wafer) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top & bottom) |
| Cooling Method | Water-cooled chamber + N₂ purge for substrate |
| Gas Control | Up to 4 MFC-controlled lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen |
| Program Storage | 50 multi-segment recipes (up to 50 steps each) |
| Dimensions (W×D×H) | 505 × 504 × 420 mm |
| Weight | ~55 kg |
| Brand | UniTemp |
|---|---|
| Model | VSS-300 |
| Origin | Germany |
| Chamber Dimensions | 350 × 350 × 75 mm (expandable to 300 mm height) |
| Max Ramp-Up Rate | 150 K/min |
| Max Ramp-Down Rate | 120 K/min |
| Bottom Heating Power | 2 × 12-lamp arrays, 18 kW total |
| Cooling | Water-cooled graphite plate (310 × 310 mm) |
| Control System | SIMATIC PLC with 7" touchscreen HMI |
| Programmable Steps | 50 programs × 50 steps each |
| Process Gas Flow | Standard 1.5 sL/min MFC (up to 4 gas lines optional) |
| Vacuum Options | MPC (10 hPa) or RVP (10⁻³ hPa) |
| Power Supply | 3-phase + N + PE, 230 V, CEE 3×32 A |
| Weight | ~140 kg |
| Compliance | Designed for ISO 9001-compliant SMT manufacturing environments |
| Enclosure Material | Polished aluminum chamber walls (stainless steel optional) |
| Origin | Denmark |
|---|---|
| Manufacturer Type | Distributor |
| Origin Category | Imported |
| Model | uni A6 |
| Price Range | USD 70,000 – 112,000 |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | AP-C350 |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | 441 |
| Quotation | Upon Request |
| Frame Material | Full Aluminum Extrusion |
| Enclosure | 441-Series Steel Sheet Housing |
| Motor-Controlled Axes | 3-axis (X/Y/Z) |
| Drive System | Stepper Motors + Synchronous Belt Transmission |
| Working Envelope | X: 400 mm |
| Y | 400 mm |
| Z | 100 mm |
| Compatible Processes | Low-temperature Plasma Cleaning, Dry Ice Jet Cleaning, Precision Dispensing |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MicroClean Series |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | VC-004 |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | VC-011 |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Model | VC-C500 |
| Origin | Guangdong, China |
| Equipment Type | Dry Cleaning System for Semiconductor Wafer & Precision Component Handling |
| Automation Level | Fully Automated (PLC + HMI Controlled) |
| Positioning Accuracy | ±0.1 mm |
| Repeatability | ±0.05 mm |
| Z-Axis Adjustment Range | 100 mm (Manual) |
| Conveyor Speed | Adjustable from 2–5 m/min |
| Electrostatic Neutralization | Integrated Pulsed DC Ionizer |
| Dust Collection Principle | High-Efficiency Negative-Pressure Vacuum Capture |
| Modular Expandability | Optional Plasma Activation Module |
| Compliance Framework | Designed for ISO Class 5–7 cleanroom integration |
| Control Interface | Industrial Touchscreen HMI with Real-Time Status Monitoring and Mode Switching (Manual/Automatic) |
| Brand | Vector Scientific |
|---|---|
| Origin | Guangdong, China |
| Model | SLKX-102-11 |
| Film Thickness Uniformity | ≤±2.5% over 4-inch wafer area, ≤±3.5% over 8-inch wafer area (measured on Ti film, 200–500 nm, edge exclusion of 5 mm, 5-point random sampling) |
| System Architecture | Interconnected multi-chamber PVD platform with load-lock and transfer robot |
| Base Pressure | ≤5×10⁻⁸ Torr (typical, after bake-out) |
| Chamber Interface Standard | CF flanges (DN100/DN160 compatible) |
| Target-to-Substrate Distance | Externally adjustable manually |
| Control Architecture | Modular PLC + real-time OS with role-based user permissions |
| Compliance | Designed to support GLP/GMP-aligned process documentation |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Fiji G2 Plasma ALD |
| Substrate Size | Up to 200 mm |
| Process Temperature | 500°C for 200 mm wafers |
| Precursor Channels | Standard 4, upgradeable to 6 |
| Dimensions (W × H × D) | 1845 × 715 × 1920 mm |
| Uniformity (1σ) | Thermal Al₂O₃ – 1.5% |
| Power Supply | 220–240 VAC, 4200 W per reactor (excl. pumps) |
| Cycle Time | <2 s per cycle (Al₂O₃ at 200°C) |
| Precursor Source Capacity | 50 cc stainless steel ampoules (max. 25 mL fill) |
| Carrier/Plasma Gases | 100 sccm Ar (precursor), 500 sccm Ar (plasma), 100 sccm N₂, 100 sccm H₂, 100 sccm O₂ (all MFC-controlled) |
| Valve Response Time | ≤10 ms |
| Independent Precursor Heating | Up to 200°C |
| Maximum Sample Height | 57 mm |
| In-situ Options | QCM, spectroscopic ellipsometry, RGA port, optical emission spectroscopy (OES), ozone generator, LVPD, integrated glovebox, substrate biasing |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Firebird Batch Thermal ALD System |
| Substrate Compatibility | Seamless wafer size conversion up to 300 mm |
| Process Type | Thermal atomic layer deposition (ALD) |
| Throughput | Up to 40,000 wafers per month |
| Film Types | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), encapsulation layers, optical coatings |
| Chamber Architecture | Modular batch reactor with integrated thermal management |
| Compliance | Designed for semiconductor high-volume manufacturing (HVM) environments |
| Automation Level | Fully automated, recipe-driven operation |
| System Integration | Compatible with factory automation standards (SECS/GEM) |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | GEN10 |
| Configuration | Cluster-tool architecture with up to three material-specific growth chambers |
| Vacuum Integration | Ultra-high vacuum (UHV) integrated chamber system |
| Automation | Robotic wafer transfer for unattended operation |
| Application Scope | Research-grade III–V, II–VI, and elemental semiconductor epitaxy |
| Compliance Framework | Designed for GLP-compliant process documentation and ASTM F1529-22 compatible thin-film metrology workflows |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Phoenix G2 ALD System |
| Substrate Capacity | Up to 370 mm × 470 mm (Gen 2.5 Panels) |
| 100 mm wafers | 240–360 pcs/batch |
| 150 mm wafers | 80–160 pcs/batch |
| 200 mm wafers | 80–100 pcs/batch |
| 300 mm wafers | up to 40 pcs/batch |
| Process Temperature Range | Up to 285 °C |
| Precursor Lines | Standard 4-channel MFC-controlled delivery |
| Dimensions (W × H × D) | 900 mm × 1370 mm × 1700 mm |
| Uniformity | <1.5% (Al₂O₃ on single wafer), <1.0% (Al₂O₃ across full batch) |
| Power Requirement | 208 VAC, 3-phase, 8500 W (including vacuum pump) |
| Gas Control | N₂ or Ar carrier/purge with mass flow controllers (MFCs) |
| Optional In-situ Tools | Ozone generator, LVPD (low-voltage plasma source), integrated glovebox, semi-automated load/unload, SECS/GEM interface |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Savannah G2 ALD |
| Substrate Size | S100: up to 100 mm |
| S200 | up to 200 mm |
| S300 | up to 300 mm |
| Process Temperature | S100: RT–400 °C |
| S200/S300 | RT–350 °C |
| Precursor Ports | configurable up to 6 |
| Dimensions (W × H × D) | S100/S200: 585 × 560 × 980 mm |
| S300 | 686 × 560 × 980 mm |
| Uniformity (Al₂O₃) | <1% (1σ) |
| Cycle Time | <2 s per cycle (Al₂O₃ at 200 °C) |
| Power Supply | 115/220 VAC, 1900 W (S100/S200), 2000 W (S300) |
| Precursor Vessels | 50 mL heated stainless-steel ampoules (heatable to 200 °C) |
| Carrier/Exhaust Gas | N₂, 100 SCCM |
| Valve Response Time | 10 ms |
| Compatible Precursor States | solid, liquid, or gaseous |
| In-situ Options | QCM, spectroscopic ellipsometry, RGA, LVPD, ozone generator, SAMs module, plasma enhancement, glovebox integration |
| Brand | Verity |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Verity EPD Spectrometer |
| Pricing | Upon Request |
| Brand | Vistron |
|---|---|
| Manufacturer | Laser oFab GmbH |
| Origin | Germany |
| Model | Laser oFab EUV Tube |
| EUV Peak Wavelength | 13.5 nm |
| Spectral Bandwidth (FWHM) | ~1 nm |
| Power Output (2π, 2% BW @ 13.5 nm) | ≤20 µW |
| Long-Term Intensity Stability (72 h) | <1% RMS |
| Source Size (FWHM) | Adjustable from <10 µm to ≥100 µm |
| Vacuum Interface | DN 16 CF flange |
| Emission Cone | 30° full angle, centered on flange axis |
| Target Material | Solid-state (L2,3-transition optimized) |
| Operating Voltage/Current | Software-controlled |
| Compliance | Designed for UHV-compatible metrology environments |
| Brand | Meiko Rika |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | VS-200 |
| Price | USD 1 (Reference Only) |
| Brand | VSParticle |
|---|---|
| Origin | Netherlands |
| Model | VSP-P1 |
| Target Materials | Conductive metals and alloys |
| Substrate Size | 10 mm (monodisperse deposition), 47 mm (filter-based deposition) |
| Substrate Temperature | Ambient (~25 °C) |
| Film Thickness Uniformity | 0–20 nm (monodisperse nanoparticle deposition) |
| Base Pressure | 0.8–1.2 bar (note: this is *absolute pressure*, not vacuum level |
| Brand | WEB |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 4800 |
| Pricing | Upon Request |
| Brand | WEB |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 6000 |
| Pricing | Upon Request |
| Test Principle | Fluorinated Oil Immersion with Visual Bubble Detection |
| Compliance | MIL-STD-883C, MIL-STD-750 Method 202 |
| Max Operating Temperature | 165 °C |
| Fluorocarbon Oil Reservoir Capacity | 1.5 US gallons |
| Test Tray Dimensions | 10 in × 4 in |
| Magnification Options | Standard adjustable 1× or optional 3× lens |
| Illumination | Dual-source, >15,000 foot-candles |
| Evaporation Control | Integrated cooling ring |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, dry-in/dry-out handling, and camera-assisted process control |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ cm⁻³ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, auto-load/unload, dry-in/dry-out capability |
| Software | Integrated ECV Control Suite with GLP-compliant audit trail, measurement recipe management, and camera-assisted process visualization |
| Brand | Westech |
|---|---|
| Origin | USA |
| Model | 7476D |
| Bonding Angle Options | 45° & 90° (deep cavity) |
| Wire Diameter Range | 18–100 µm |
| Ribbon Dimensions | 0.0005 × 0.010 in or 0.001 × 0.010 in |
| Ultrasonic Power Output | 4 W |
| Bonding Force Control | Dual-range, programmable |
| Heating | Resistive tool heating |
| Motion Control | Direct-drive motor with programmable tail control |
| Platform | Adjustable height (0.625 in), 12 × 12 in |
| Display | LCD interface |
| ESD Protection | Standard |
| Deep Cavity Capability | ≥13 mm (1 in optional) |
| Software | Multi-device recipe storage |
| Compliance | ESD-safe architecture, designed for Class 100/ISO 5 cleanroom integration |
| Brand | WUXI CAS PHOTONICS INC |
|---|---|
| Origin | Sichuan, China |
| Model | URE-2000S/25A |
| Exposure Area | 6-inch wafer |
| Exposure Wavelength | 365 nm (i-line) |
| Irradiance | >25 mW/cm² |
| Resolution | 1 µm |
| Alignment Accuracy | ±2 µm (double-side, 0.8 mm substrate thickness), ±0.8 µm (single-side) |
| Illumination Uniformity | ≤2.5% (Φ100 mm), ≤4% (Φ150 mm) |
| Mask-to-Wafer Motion Range | X: ±5 mm, Y: ±5 mm, Θ: ±6° |
| Mercury Lamp | 350 W DC, imported (OSRAM) |
| Collimation Angle | 3.5° |
| Maximum Photoresist Thickness | 350 µm (SU-8, under specified process conditions) |
| Dimensions (L×W×H) | 1300 × 900 × 1800 mm |
| Brand | Zhengye |
|---|---|
| Model | Zhengye X-RAY AutoInspection System |
| Origin | Guangdong, China |
| Manufacturer Type | OEM/ODM Manufacturer |
| Regional Classification | Domestic (China) |
| Price Range | USD 112,000 – 140,000 |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | XBS200 |
| Maximum Wafer Size | 200 mm |
| Bonding Force | up to 100 kN |
| Temperature Range | up to 550 °C |
| Vacuum Chamber Pressure Range | 5×10⁻⁵ mbar to 3 bar |
| Heating/Cooling Rate | up to 40 K/min (heating), up to 30 K/min (cooling) |
| Bonding Force Repeatability | < 2% |
| Temperature Uniformity | < 1% |
| Process Control | Programmable ramp/soak profiles with independent pressure, temperature, and force regulation |