Semiconductor Instruments
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| Brand | SYSKEY |
|---|---|
| Origin | Taiwan |
| Model | E-beam |
| Instrument Type | Electron Beam Evaporator |
| Substrate Size | Up to 12-inch wafer |
| Substrate Temperature Range | Ambient to 800 °C (heating) / Down to –70 °C (liquid nitrogen cooling) |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤5×10⁻¹⁰ Torr (with cryopump) |
| Crucible Configuration | 1–6 water-cooled rotating crucibles (7–25 cc each) |
| Optional Integration | KRI ion source, load-lock, transfer chamber, glovebox, plasma cleaner |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | FPD-PVD |
| Instrument Type | Magnetron Sputtering Coater |
| Substrate Size | Up to 12-inch (300 mm) wafers or 550 × 650 mm² glass panels |
| Base Pressure | ≤1×10⁻¹⁰ Torr |
| Substrate Temperature Range | Ambient to 1000°C (with high-temp heating stage option) |
| Thickness Uniformity | ±3% across full substrate |
| Configurable Chamber Count | 4 independent sputter chambers |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China (Taiwan) |
| Model | In-Line Sputter |
| Instrument Type | Magnetron Sputtering Deposition System |
| Application Field | Microelectronics |
| Maximum Substrate Size | 1100 × 1300 mm² (glass) |
| Substrate Temperature Range | Up to 400 °C |
| Film Thickness Uniformity | ±5% |
| Ultimate Vacuum | 10⁻⁷ Torr |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Lift-Off E-beam |
| Instrument Type | Electron Beam Evaporator |
| Application Domain | Microelectronics |
| Substrate Diameter | 12-inch (300 mm) |
| Maximum Substrate Temperature | 800 °C |
| Film Thickness Uniformity | ±3% |
| Base Pressure | 10⁻⁸ Torr |
| Cooling Options | Water-cooled or Liquid Nitrogen-cooled Substrate Holder (down to –70 °C) |
| Source Configuration | Multi-pocket e-beam gun (1/2/4/6 pockets) |
| Deposition Modes | Sequential or Co-evaporation |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Metal Thermal |
| Instrument Type | Thermal Evaporation Coater |
| Application Field | Solar Cells, Nanomaterials, Metal Thin Film Research |
| Substrate Size | Up to 12-inch wafer or 470 × 370 mm² glass |
| Substrate Temperature Range | Ambient to 800 °C |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤1×10⁻⁸ Torr |
| Vacuum Sealing | Nickel gasket + Viton O-rings |
| Evaporation Sources | Multiple configurable boat/crucible sources (7–25 cc) |
| Substrate Manipulation | Rotatable heated stage, adjustable source-to-substrate distance, individual shutters per source |
| Optional Integration | KRI ion source (for in-situ substrate cleaning and film densification), load-lock, glovebox interface, RGA, e-beam assist |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Equipment Type | Magnetron Sputter Deposition System |
| Substrate Size | Up to 300 mm (12-inch) |
| Base Pressure | ≤1×10⁻⁸ Torr |
| Substrate Temperature Range | Ambient to 600 °C |
| Thickness Uniformity | ±3% (across 300 mm wafer) |
| Sputter Sources | Up to 6 configurable magnetron cathodes (RF/DC/pulsed DC) |
| Gas Lines | Up to 4 mass flow controllers (Ar, N₂, O₂) |
| Substrate Motion | Planetary rotation + independent rotation |
| Optional Integration | KRI ion source, load-lock, RGA/OES ports, RF bias, film thickness monitor |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | OLED, OPV |
| Instrument Type | Thermal Evaporation Coater |
| Substrate Size | Up to 12-inch wafer or 470 × 370 mm |
| Thickness Uniformity | ±3% |
| Evaporation Source Control Resolution | 0.01 Å/s |
| Source Temperature Stability | ±0.1 °C |
| Alignment Accuracy (CCD-based mask-to-substrate) | ±5 µm |
| Base Pressure | ≤5 × 10⁻⁷ Torr |
| Chamber Material | 304 Stainless Steel |
| Max. Evaporation Sources | 12 |
| Cooling | External Water-Cooled Jacket |
| Integration Options | Load-lock transfer chamber, robotic handler, glovebox interface, RGA |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Organic Material |
| Instrument Type | Thermal Evaporation Coater |
| Application Field | Microelectronics |
| Substrate Size | 12-inch (300 mm) wafer or 470 × 370 mm² glass |
| Substrate Temperature Range | Up to 800 °C |
| Film Thickness Uniformity | ±3% |
| Ultimate Vacuum | 5 × 10⁻⁹ Torr |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Thermal ALD |
| Substrate Size | Customizable, up to 300 mm wafer |
| Process Temperature | Up to 400 °C (substrate heater) |
| Uniformity | ±1% |
| Precursor Channels | Up to 6, each independently heated to 200 °C |
| Pulse Valve Response Time | 10 ms |
| Chamber Material | Aluminum or stainless steel |
| Cooling | Integrated water-cooling system |
| Brand | SYSKEY |
|---|---|
| Origin | Taiwan |
| Manufacturer Type | Authorized Distributor |
| Instrument Type | Electron Beam Evaporator |
| Substrate Diameter | Up to 8 inches (203 mm) |
| Substrate Temperature Range | –70 °C (LN₂ cooling) to +800 °C |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤5×10⁻¹⁰ Torr |
| E-beam Source Configuration | 4–6 crucibles (7–25 cm³ each) |
| Vacuum Sealing | All-metal CF flanges with bakeable elastomer O-rings |
| Pumping System | Cryopump (standard), optional turbomolecular pump |
| Process Monitoring | Bayard-Alpert gauge + quartz crystal microbalance (QCM) |
| Control Mode | Sequential or co-evaporation |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D environments |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | UHV Sputter |
| Baseplate Size | Up to 12-inch (300 mm) wafers |
| Substrate Temperature Range | Ambient to 1000 °C |
| Film Thickness Uniformity | ±3% |
| Ultimate Vacuum | ≤5×10⁻¹⁰ Torr |
| Sputter Sources | Up to 8 configurable magnetron cathodes (RF/DC/pulsed DC) |
| Gas Lines | Up to 4 mass flow-controlled channels (Ar, N₂, O₂, etc.) |
| Chamber Sealing | All-metal ConFlat (CF) flanges, bakeable to 150 °C |
| Substrate Manipulation | Motorized rotation with ceramic bearing & internal water cooling |
| Optional Integration | Load-lock, transfer chamber, glovebox, ion source (100 keV Kr⁺), e-beam evaporation, RGA/OES ports |
| Brand | Techno Search Corp |
|---|---|
| Origin | Japan |
| Model | TCA4-6 |
| Maximum Operating Temperature | 2000–3000 °C |
| Chamber Vacuum Level | ≤1×10⁻⁶ Torr (≤1.3×10⁻⁴ Pa) |
| Atmosphere Control | High-purity Ar, pressure range 10⁻⁴ Pa to 1 atm |
| Crucible Rotation Speed | 1–10 rpm (manual) |
| Crystal Pulling Speed | 3–38 mm/hr |
| Pulling Stroke | 150 mm |
| Electrode Configuration | 4 arc-melting electrodes + 1 getter electrode |
| Sustained Arc Current | up to 75 A (adjustable) |
| Peak Arc Current | up to 150 A (short-term, adjustable) |
| Crucible Material | Water-cooled copper |
| Chamber Material | Stainless steel |
| Real-time Visual Monitoring | Integrated high-temperature CCD camera with viewport |
| Brand | Ted Pella |
|---|---|
| Origin | USA |
| Type | Manual Cleaving Instrument |
| Model | Small Sample Cleaver |
| Sample Width Capacity | 3–15 mm |
| Sample Thickness Range | 200–900 µm |
| Cleave Platform Dimensions | ≤2 × 2 mm |
| Indent Length | 0.5 mm |
| Compatibility | Designed for use with PELCO® LatticeAx® (1 mm indent) |
| Mounting | Four magnetic fixation points |
| Portability | Handheld, volume ≈ 100 mm³ |
| Brand | TESCAN |
|---|---|
| Origin | Czech Republic |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported High-Energy Ion Implanter |
| Model | Quiin |
| Product Type | Dual-Beam FIB-SEM with Integrated Quantum-Scale Ion Implantation Capability |
| Application Domain | IC Fabrication, Quantum Device Engineering, Advanced Materials Modification |
| Electron Source | Schottky Field-Emission Gun (e-CLIPSE), Lifetime ≥ 2 years |
| Electron Beam Landing Energy | 500 eV – 30 keV |
| Electron Probe Current | ~pA to >100 nA |
| FIB Sources | iVeloce (ECR plasma source, Xe/O₂/Ar/He/N₂), Veloce (Liquid Metal Ion Source, Ga⁺/Ge⁺/Au⁺/Au₃⁺/Si⁺/Au clusters) |
| Ion Beam Energy Range | 3–30 keV |
| Minimum Measurable Ion Current | 20 fA |
| Maximum Probe Current | 1 µA (iVeloce), 50 nA (Veloce) |
| FIB Resolution | 5 nm @ 30 keV (Veloce), 40 nm @ 30 keV (iVeloce) |
| SEM Resolution | 4 nm @ 25 keV |
| Working Distance | 12 mm |
| Beam Intersection Angle | 55° |
| In-situ Heating Stage (FurnaSEM 1000) | Max Temp = 950°C, Ramp Rate = 0.01–3 °C/s, Area = 50 × 30 mm |
| GIS | Energis system with 3 precursor reservoirs (e.g., Pt, W, C, SiOₓ, H₂O, XeF₂) |
| Software Platform | Pegasus GUI & API |
| Brand | McScience |
|---|---|
| Origin | South Korea |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | T5000 |
| Pricing | Available Upon Request |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Thermal-ALD E200S |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | Room Temperature to 500 °C (customizable) |
| Precursor Channels | Up to 6 independent precursor lines (customizable), supporting both solid and liquid precursors with individual source heating (RT–200 °C) |
| Reactant Gas Lines | 2 (customizable) |
| Carrier Gas | N₂ with Mass Flow Controllers (MFCs) |
| Pressure Monitoring | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5×10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touch-enabled display, embedded industrial PC (Windows 7), PLC-based real-time control with fieldbus support |
| Plasma Upgrade Port | Integrated PEALD interface for seamless thermal-to-plasma ALD mode transition without chamber replacement |
| Brand | Thermic Edge |
|---|---|
| Origin | United Kingdom |
| Model | TE2000, TE3000 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Operating Temperature | 2100 °C (vacuum), 2600 °C (inert atmosphere with tungsten heating zone), 3000 °C (graphite heating zone) |
| Vacuum Level | Down to 5 × 10⁻⁸ mbar (with Edwards EXT75DX turbomolecular pump) |
| Sample Capacity | Up to 200 mm (8-inch) wafers |
| Temperature Uniformity | < ±1% across heating zone |
| Temperature Accuracy | Better than ±1% of setpoint |
| Ramp Rate | ≥100 °C/min (heating), up to 200 °C/s (controlled cooling) |
| Pressure Control Precision | < ±0.5 bar |
| Heating Zone Materials | Graphite or tungsten |
| Vacuum Interface Standard | ISO-KF63 or KF25 |
| Cooling System | Integrated water-cooling circuit |
| Safety Systems | Interlocked electronic door lock, real-time O₂ purge logic, over-temperature and over-pressure alarms, LED status indicators |
| Brand | Thermo Fisher Scientific |
|---|---|
| Origin | Czech Republic |
| Model | ELITE |
| Type | Lock-in Thermography Inspection System for Semiconductor Failure Analysis |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments, compatible with GLP/GMP documentation workflows |
| Brand | Tianwei (Shandong Tianwei Environmental Technology Co., Ltd.) |
|---|---|
| Model | TW-6481B5+ |
| Origin | Shandong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Application Scope | Length measurement, attenuation profiling, splice/connector loss evaluation, and fault localization in single-mode and multimode optical fiber cables |
| Dynamic Range | 28 dB |
| Maximum Test Distance | 100 km |
| Event Dead Zone | 3 m |
| Sampling Resolution | 2.5 cm |
| Display | 7-inch capacitive touchscreen (800 × 480 TFT LCD) |
| Battery | 3.7 V / 4600 mAh Li-polymer with smart power management |
| Operating Wavelengths | 1310 / 1550 / 1625 / 1650 ±20 nm |
| Compliant File Formats | Bellcore GR-196, SR-4731 |
| Integrated Functions | OTDR, Optical Power Meter (OPM), Visual Fault Locator (VFL, 650 nm), Stable Light Source (LS), Live-fiber detection with automatic optical input warning |
| Interface | USB Type-C, microSD slot |
| Weight | ≤700 g (with battery) |
| Dimensions | ≤200 × 150 × 38 mm |
| Environmental Rating | Operating temperature 0–40 °C |
| Brand | TMC |
|---|---|
| Origin | USA |
| Model | TMC Active Vibration Isolation Systems |
| Vibration Isolation Frequency Range | 0.6–250 Hz |
| Isolation Efficiency | >90% above 2 Hz |
| Application Scope | Semiconductor Metrology, Electron Microscopy, AFM, Optical Interferometry, Nanofabrication Tools |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Measurement Principle | Electrochemical C–V Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI semiconductors |
| Automation Level | Fully Automated (Dry-In/Dry-Out, Auto-Load/Unload/Reload) |
| System Architecture | Modular, Cleanroom-Compatible, Optically & Electrically Isolated Subsystems |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and other III–V, II–VI, IV–IV, and ternary/quaternary compound semiconductors |
| Automation Level | Fully automated electrochemical etching and C–V scanning |
| Compliance | Designed for GLP/GMP-aligned R&D and process development environments |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | FLX-2320-S |
| Application | In-situ and ex-situ thin-film stress measurement on semiconductor wafers up to 8 inches (200 mm) |
| Temperature Control Range | −65 °C to +500 °C |
| Dual-Laser Source | Visible (e.g., 635 nm) and Near-Infrared (e.g., 785 nm) |
| Data Export | CSV, Excel (.xlsx), XML |
| Software Compliance | Audit trail-ready configuration supporting GLP/GMP-aligned documentation workflows |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | SB1000 |
| Temperature Range | 80 K – 700 K |
| Measurement Principle | Differential Thermoelectric Voltage Detection |
| Probe Configuration | 2-probe and 4-probe options |
| Sample Environment | High-vacuum compatible (integrated vacuum chamber) |
| Controller Type | Digital, microprocessor-based Seebeck coefficient controller |
| Cooling Method | Liquid nitrogen cryostat (for low-T) or heated stage (for high-T) |
| Data Acquisition | Real-time transient thermovoltage sampling with statistical averaging |
| Software Interface | PC-based control and analysis (Windows OS) |
| Brand | Tongzhou Weipu |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Regional Classification | Domestic (PRC) |
| Model | A-Series Dedicated Chiller for Single-Crystal Furnaces |
| Pricing | Available Upon Request |
| Brand | Tongzhou Weipu |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Manufacturer |
| Product Category | Domestic |
| Model | L-Series Glove Box Dedicated Chiller |
| Pricing | Upon Request |
| Brand | Tongzhou Weipu |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Product Origin | Domestic (China) |
| Model | SCd |
| Pricing | Available Upon Request |
| Temperature Control Range | −20 °C to 90 °C (per channel) |
| Independent Dual-Channel Control | Yes |
| Temperature Uniformity | ±0.1 °C |
| Refrigerant Flow Control | Electronic Expansion Valve |
| Compatible Heat Transfer Fluids | Perfluoropolyether (PFPE) electronic fluorinated liquid, Ethylene Glycol/Water mixture, Deionized Water, or High-Purity Water |
| Brand | Tongzhou Weipu |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Model | SCk |
| Cooling Channels | Dual (Spindle + Cutting Fluid) |
| Temperature Stability | ±0.1 °C |
| Compliance | SEMI S2/S8 Certified |
| Cooling Method | Direct Drain for Cutting Fluid Circuit |
| Auto-Replenishment | Integrated Reservoir System |
| Configuration Flexibility | Scalable “One-Chiller-Multiple-Tools” Architecture |
| Enclosure Design | Space-Optimized, Industrial-Grade IP54 Housing |
| Control Interface | Touchscreen HMI with Real-Time PID Monitoring |
| Safety Features | Dry-run protection, flow/pressure/temperature fault interlocks, leak detection |
| Brand | Tongzhou Weipu |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Product Category | Domestic (China-Made) |
| Model | SCk Dual-Channel Chiller for Dicing Saw |
| Pricing | Available Upon Request |
| Temperature Stability | ±0.1 °C |
| Cooling Channels | Dual Independent (Spindle + Cutting Fluid) |
| Fluid Delivery | Direct-Drain Cutting Water Circuit |
| Auto-Replenishment | Integrated Liquid Level Control System |
| Scalability | Modular “One-Chiller-Multiple-Machines” Configuration Supported |
| Compliance | SEMI S2-0216 & SEMI F47-0220 Certified |
| Control Architecture | Proprietary PID-Based Digital Temperature Management System |
| Footprint Optimization | Compact Vertical Design with Service-Friendly Layout |
| Brand | Tongzhou Weipu |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Product Category | Domestic |
| Model | SCr |
| Pricing | Upon Request |
| Cooling Architecture | Dual-Temperature, Dual-Control Single-System |
| Spindle Circuit | Closed-Loop, ±0.1°C Stability |
| Dicing Circuit | Recirculating with Auto-Replenishment, ±0.5°C Stability |
| Compliance | SEMI-compliant |
| Configurations | Single-, Dual-, and Multi-Channel Options |
| Control System | Proprietary Temperature Management Platform |
| Footprint | Space-Optimized Industrial Design |