Empowering Scientific Discovery

Shenzhen Keshida Electronic Technology Co., Ltd.

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BrandAngstrom
OriginUSA
ModelAngstrom-dep Powder ALD
Base Heating Range25–450 °C (optional up to 650 °C)
Substrate Uniformity<1% (Al₂O₃ on 4″ wafer)
Precursor Lines4 / 6 / 8 configurable
Precursor Bottle Capacity & Temp100 mL, ambient to 250 °C
ALD ValvesSwagelok high-temp valves (150 / 200 / 250 °C options)
Carrier GasesN₂ or Ar
Vacuum SystemAlcatel mechanical pump (optional Pfeiffer turbomolecular or dry scroll pump)
Optional ModulesLoad-lock chamber, glovebox integration, cryo-trap, ozone generator, plasma source, in-situ monitoring (QCM, ellipsometry, RGA), exhaust abatement
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