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| Brand | Anric |
|---|---|
| Model | AT |
| Type | Desktop Atomic Layer Deposition (ALD) System |
| Origin | USA |
| Chamber Temperature Range | RT–350 °C |
| Precursor Source Temperature Range | RT–150 °C |
| Process Pressure Range | 0.1–1.5 Torr |
| Maximum Precursor Sources | 5 |
| Substrate Compatibility | Up to 4″ wafers (expandable to 6″) |
| Cycle Time | 6–10 cycles per minute |
| Control Interface | Touchscreen PLC |
| Chamber Architecture | Compact, R&D-Optimized |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | Mila-5000 Series |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Vacuum Level (Mila-5000UHV) | ≤1×10⁻⁵ Pa |
| Max Heating Rate | Up to 50 °C/s |
| Cooling Method | Integrated Water-Cooled Chamber |
| Atmosphere Options | Vacuum, Inert Gas (N₂, Ar), Ambient Air, Controlled Flow Gas |
| Sample Environment | O-Ring Sealed Quartz Tube |
| Real-Time Monitoring | Top-Mount Optical Viewport + Optional USB Camera Integration |
| Temperature Control | Built-in Programmable PID Controller with Dual Display (Setpoint vs. Actual) |
| Interface | USB 2.0 for PC-Based Program Configuration and Data Logging |
| Brand | Angstrom Sun |
|---|---|
| Origin | USA |
| Model | Angstrom Dep II |
| Substrate Size | 4", 6", 8", or 12" wafers |
| Process Temperature Range | 25–400 °C (optional extended range available) |
| Precursor Channels | 4 standard (upgradable to 6) |
| Uniformity | < 1% (1σ, across full wafer) |
| Footprint | 950 mm × 700 mm (W × D) |
| Cleanroom Compatibility | ISO Class 5 (Class 100) compliant |
| Deposition Modes | Thermal ALD, Plasma-Enhanced ALD (PE-ALD), and Powder ALD capable |
| Weight | Configurable (typical system: ~350 kg) |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Model | AR-P 6200 |
| Product Type | Positive-tone e-beam resist |
| Key Variants | AR-P 6200.09 (standard), AR-P 6200.13 (thick-film), AR-P 6200.18 (ultra-thick), AR-P 6200.04 (low-temperature optimized) |
| Developer Compatibility | AR 600-546, AR 600-548, AR 600-55, AR 600-50/2 |
| Acceleration Voltage Range | 1–100 kV |
| Film Thickness Range | 50 nm – 1.5 µm |
| Sensitivity (AR-P 6200.09, 30 kV, AR 600-546) | ~55 µC/cm² (D₀), ~220 pC/cm² (10 nm trenches) |
| Contrast (γ) | 14.2 |
| Resolution | ≤6 nm (at 6 °C, optimized process) |
| Plasma Etch Resistance | High (CF₄ + O₂), superior to PMMA (AR-P 679.03) and ZEP 520A |
| Post-Exposure Bake (PEB) | Not required |
| Lift-off Capability | ≤20 nm metal lines, defined undercut tunable via dose |
| Two-Layer Compatibility | Validated with AR-P 617 series (e.g., AR-P 617.06) |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Model | SX AR-PC 5000/41 |
| Type | Acid-Resistant, Non-Photosensitive Protective Resist |
| Compatibility | KOH (40% w/w), HF (50% w/w) |
| Processing | Spin-Coatable |
| Regulatory Status | Import Product for Semiconductor Fabrication |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AR-N 4400 |
| Pricing | Available Upon Request |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AR-N 4600 (Atlas 46) |
| Pricing | Available Upon Request |
| Brand | Allresist |
|---|---|
| Origin | UK |
| Model | PMMA Electra 92 (AR-PC 50) |
| Formulation | Aqueous/isopropanol solution of polyaniline derivative |
| Application | Charge-dissipative topcoat for non-novolac e-beam resists |
| Removal | Post-exposure aqueous rinse |
| Compliance | Compatible with standard e-beam lithography workflows (JEOL, Raith, Zeiss systems) |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Semiconductor Process Chemicals |
| Model Range | AR Series |
| Pricing | Upon Request |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Product Type | Conductive Spin-Coatable Anticharging Coating for E-beam Lithography & SEM/FIB Imaging |
| Model | AR-PC 5090.02, AR-PC 5091.02 |
| Film Thickness | ~40 nm at 4000 rpm |
| Developer | Deionized Water |
| UV/E-beam Insensitivity | Yes |
| Compatibility | AR-PC 5090.02 — PMMA, CSAR 62, HSQ |
| Solubility Post-Exposure | Aqueous |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Compatibility | Up to φ100 mm (4-inch) |
| Maximum Precursor Channels | 6 |
| Uniformity | ≤3% @ 100 mm |
| Process Temperature Range | Ambient to 800 °C (with optional heater) |
| Precursor Temperature Control | Up to 200 °C |
| Vacuum System | Dry Pump Compatible |
| Exhaust Treatment | Optional Scrubber Integration |
| Software | Touchscreen GUI with ≥30 Programmable Recipes |
| System Architecture | Integrated Mainframe and Control Enclosure |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Model | AR-N7700 |
| Type | Chemically Amplified Negative Tone Resist |
| Exposure Modalities | Electron Beam (e-beam), Deep Ultraviolet (248 nm) |
| UV Transparency Range | 248–265 nm & 290–330 nm |
| Etch Resistance | High (Compatible with CF₄, CHF₃, O₂-based Plasma Etching) |
| Packaging | 100 mL amber glass bottles under nitrogen purge |
| Brand | Allresist |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | AR-P 610 Series |
| Pricing | Upon Request |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | R-Series |
| Price Range | USD 135,000 – 270,000 (FOB Helsinki) |
| Substrate Size | 50–200 mm (2″–8″, 8″ available on request) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 2–6 (gas, vaporized liquid, or solid-source compatible) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 70 × 105 × 92.5 cm |
| Uniformity | < ±1% across 200 mm wafers (typical, SiO₂ on Si) |
| Origin | Sichuan, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (China) |
| Model | G-33D4 |
| Pricing | Available Upon Request |
| Exposure Mode | Contact Printing |
| Resolution | 1 µm (at 10× line depth ratio) |
| Light Source | High-Stability 365 nm UV LED |
| Illumination Uniformity | ±3% |
| Exposure Area | 110 mm × 110 mm |
| UV Intensity Range | 0–30 mW/cm² (adjustable) |
| Beam Divergence | ≤3° |
| UV Source Lifetime | ≥20,000 hours |
| Operating Surface Temperature | ≤30 °C |
| Alignment Accuracy | ≤1 µm |
| Optical Magnification | 91× to 570× (software-enhanced digital zoom) |
| Control System | 4-inch PLC with OMRON timing relay (0.1–999.9 s exposure) |
| Vacuum System | Direct-coupled vacuum pump with dual-stage anti-vibration isolation |
| Microscopy | Dual-field upright or horizontal stereo microscope with four 1/3″ CCD cameras and real-time imaging memory |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Genesis ALD |
| Substrate Width | Up to 420 mm |
| Process Temperature | Up to 250 °C |
| Precursor Channels | Configurable (standard ≥4) |
| ALD Film Thickness Range | Up to 100 nm |
| Dynamic Deposition Rate (Al₂O₃) | 10 nm·m/min |
| Uniformity | ≤±1.5% (3σ, across full web width) |
| System Footprint | Customizable per integration requirements |
| Weight | Site-specific (typically 1,200–2,500 kg) |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | TS200-SE Probe System |
| Price Range | USD 13,500 – 40,500 (FOB) |
| Product Category | Temperature-Controlled Manual Probe Station |
| Operation Mode | Manual |
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