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| Brand | Anric |
|---|---|
| Model | AT |
| Type | Desktop Atomic Layer Deposition (ALD) System |
| Origin | USA |
| Chamber Temperature Range | RT–350 °C |
| Precursor Source Temperature Range | RT–150 °C |
| Process Pressure Range | 0.1–1.5 Torr |
| Maximum Precursor Sources | 5 |
| Substrate Compatibility | Up to 4″ wafers (expandable to 6″) |
| Cycle Time | 6–10 cycles per minute |
| Control Interface | Touchscreen PLC |
| Chamber Architecture | Compact, R&D-Optimized |
| Brand | Angstrom Sun |
|---|---|
| Origin | USA |
| Model | Angstrom Dep II |
| Substrate Size | 4", 6", 8", or 12" wafers |
| Process Temperature Range | 25–400 °C (optional extended range available) |
| Precursor Channels | 4 standard (upgradable to 6) |
| Uniformity | < 1% (1σ, across full wafer) |
| Footprint | 950 mm × 700 mm (W × D) |
| Cleanroom Compatibility | ISO Class 5 (Class 100) compliant |
| Deposition Modes | Thermal ALD, Plasma-Enhanced ALD (PE-ALD), and Powder ALD capable |
| Weight | Configurable (typical system: ~350 kg) |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Compatibility | Up to φ100 mm (4-inch) |
| Maximum Precursor Channels | 6 |
| Uniformity | ≤3% @ 100 mm |
| Process Temperature Range | Ambient to 800 °C (with optional heater) |
| Precursor Temperature Control | Up to 200 °C |
| Vacuum System | Dry Pump Compatible |
| Exhaust Treatment | Optional Scrubber Integration |
| Software | Touchscreen GUI with ≥30 Programmable Recipes |
| System Architecture | Integrated Mainframe and Control Enclosure |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | R-Series |
| Price Range | USD 135,000 – 270,000 (FOB Helsinki) |
| Substrate Size | 50–200 mm (2″–8″, 8″ available on request) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 2–6 (gas, vaporized liquid, or solid-source compatible) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 70 × 105 × 92.5 cm |
| Uniformity | < ±1% across 200 mm wafers (typical, SiO₂ on Si) |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Genesis ALD |
| Substrate Width | Up to 420 mm |
| Process Temperature | Up to 250 °C |
| Precursor Channels | Configurable (standard ≥4) |
| ALD Film Thickness Range | Up to 100 nm |
| Dynamic Deposition Rate (Al₂O₃) | 10 nm·m/min |
| Uniformity | ≤±1.5% (3σ, across full web width) |
| System Footprint | Customizable per integration requirements |
| Weight | Site-specific (typically 1,200–2,500 kg) |
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