Empowering Scientific Discovery

Wiesner Nanosystems GmbH

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BrandANRIC
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelAT650/850T
PricingUpon Request
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BrandANRIC
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelAT610
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BrandANRIC
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelAT410
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BrandANRIC
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelAT810
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BrandANRIC
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelAT650/850P
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BrandANRIC
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelAT200M
PricingUpon Request
Footprint14 in × 15 in × 14.5 in (35.5 cm × 38.1 cm × 36.5 cm)
Chamber Volume~15 in³ (38.1 cm³)
Substrate CapacityUp to four 2-inch wafers (square or circular)
Precursor PortsStandard 2-port (1 precursor + 1 reactant)
Precursor Temp RangeRT to 180 °C ±2 °C (heated jacket)
Chamber Temp RangeRT to 300 °C ±1 °C (optional chuck heating to 450 °C+)
Plasma Source Option13.56 MHz, 80 W hollow cathode plasma (AT200M Plus)
Control Interface5-inch PLC-driven touchscreen HMI (Windows Ethernet remote access enabled)
MaterialsSemiconductor-grade stainless steel chamber with metal-sealed fittings, heated manifolds, ultra-fast ALD valves with integrated inert gas purge (UHP N₂ >99.9995%)
ComplianceCleanroom-compatible design
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