Semiconductor Instruments
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| Brand | Kingsemi |
|---|---|
| Origin | Liaoning, China |
| Model | KS-FT200/300 (8"/12" Front-End Process) |
| Application | ArF/KrF/I-Line photoresists, PI, BARC, SOC, SOD, SOG |
| Integration | Compatible with track-to-scanner inline lithography systems |
| Certification | Compliant with SEMI S2/S8 safety standards, ISO 14644-1 Class 5 cleanroom operation |
| Architecture | Modular stackable design |
| Thermal Control | Optional high-precision hot/cold plates (±0.1°C uniformity) |
| Inspection | Optional integrated Wafer Edge Exposure (WEE) and Automated Optical Inspection (AOI) modules |
| Maintenance | Front-accessible modular units with tool-less panel removal |
| Brand | Kingsemi |
|---|---|
| Model | KS-S150 |
| Configuration | Star-type fully automated coater/developer |
| Substrate Compatibility | Sapphire, GaAs, SiC wafers (4", 6") |
| Throughput | ≥190 wafers/hour (coating module) |
| Photoresist Consumption | 0.6 mL per 4" wafer |
| Certification | CSA Certified |
| Origin | Liaoning, China |
| Equipment Type | Semiconductor Coater/Developer for Patterning Processes |
| Application Scope | LED-PSS, compound semiconductor fabrication, sensor ICs, optical communication chips, power devices, patterned sapphire substrates |
| Brand | Kingsemi |
|---|---|
| Model | KS-S150-6ST |
| Origin | Liaoning, China |
| Equipment Type | Semiconductor Resist Stripping System |
| Configuration | 6-Station Wet Processing Platform |
| Vacuum Handling | Dual-Vacuum Dual-Clamp High-Speed Robotic Arm |
| Alignment | Automated Wafer Centering (AWC) with Vision-Based Recognition |
| Bath Compatibility | Multi-Size & Multi-Angle Immersion Modules (150 mm to 200 mm wafers) |
| Pressure Control | Closed-Loop High-Pressure Fluid Delivery (±0.2 MPa accuracy) |
| Heating System | In-Line High-Pressure Resistant Heater (PID-controlled, ≤120 °C) |
| Chuck Type | Actively Clamped, Backside-Protected Electrostatic/ Mechanical Chuck |
| Chemical Recovery | Integrated Solvent Recovery and Recirculation Loop |
| Compliance | Designed for Class 100 Cleanroom Integration |
| Brand | k-Space Associates |
|---|---|
| Origin | USA |
| Model | kSA MOS |
| Stress Measurement Range | 0.32 MPa – 7.8 GPa |
| Measurement Technology | Multi-Beam Optical Sensor (MOS) |
| Operating Temperature | Ambient to system process temperature (vacuum chamber compatible) |
| Compliance | Designed for UHV/MBE/MOCVD integration, vacuum-rated optical interface, ISO 9001-manufactured instrumentation |
| Brand | Laurell |
|---|---|
| Origin | USA |
| Model | H6-15 |
| Maximum Speed | 12,000 rpm (at 100 mm Si wafer) |
| Substrate Compatibility | up to 300 mm wafers and 9″ × 9″ (229 mm × 229 mm) square substrates |
| Control Interface | Wireless tablet with Laurell Touch software |
| Firmware Upgradability | Field-upgradable via downloadable updates |
| Software | Spin3000 PC-based process management suite (free, includes virtual simulation mode) |
| Enclosure Compatibility | Designed for integration into gloveboxes |
| Modular Expansion | Field-upgradable via plug-in modules |
| Compliance | Supports GLP/GMP traceability requirements through audit-ready process logging |
| Brand | Laurell |
|---|---|
| Origin | USA |
| Model | WS-650-8B |
| Maximum Substrate Size | 200 mm wafer or 178 mm × 178 mm square substrate |
| Max Speed | 12,000 rpm (at 100 mm Si wafer) |
| Controller | 650 Series Microprocessor-Based Process Controller |
| Software | Spin3000 PC Control & Simulation Suite (free, optional but fully compatible) |
| Housing Material | Chemically resistant solid copolymer blend (standard) or PTFE Hostaflon® TFM-1600 / Teflon® AF (optional, high-temp/ultra-clean) |
| Sealing | Proprietary labyrinth seal with N₂ purge capability |
| Compliance | Designed for ISO Class 5–4 cleanroom integration |
| Brand | Laurell |
|---|---|
| Origin | USA |
| Model | WS-650Mz-23N |
| Maximum Speed | 12,000 rpm |
| Acceleration | 0–12,000 rpm/sec |
| Speed Accuracy | ≤ ±1 rpm (NIST-traceable) |
| Speed Stability | < ±1% |
| Time Resolution | 0.1 sec (1–5999.9 sec/step) |
| Chuck Compatibility | Ø10–150 mm wafers or 125×125 mm square substrates |
| Chamber Diameter | 9.5 in (241 mm) |
| Controller | PLC-based with SPIN3000 software integration |
| Construction Material | NPP (Natural Polypropylene) |
| Programmability | 20 stored recipes, up to 51 steps per recipe |
| Vacuum System | Oil-free pump, 220–240 VAC, 50/60 Hz |
| Leveling | Included NIST-calibrated digital level |
| Brand | LEBO Science |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | Customized-2 |
| Wafer Compatibility | Fragments to 200 mm (customizable up to 300 mm with quad-nozzle configuration) |
| Development Modes | Single-step & Multi-step Programmable Process |
| Max. Spin Speed | 3000 rpm (no-load) |
| Speed Resolution | ±1 rpm |
| Acceleration Range | 10–10,000 rpm/sec (no-load) |
| Step Duration Range | 0–3000 sec |
| Time Resolution | 0.1 sec |
| Nozzle Control | Motorized XYZ-positioning with programmable trajectory |
| Fluid Delivery | 1 dedicated developer channel + 1 deionized water rinse channel + 1 N₂ purge channel |
| Compliance | Designed for Class 100–1000 cleanroom environments |
| Software | Onboard HMI with 100 user-editable process recipes |
| Brand | LEBO Science |
|---|---|
| Origin | Jiangyin, Jiangsu, China |
| Model | UC100-SE |
| Rated Voltage | AC 220 V, 50 Hz |
| Lamp Power | 275–300 W |
| Lamp Lifetime | ≥8,000 h |
| Emission Wavelengths | 184/185 nm + 254 nm |
| Maximum Substrate Size | ≤8-inch (200 mm) |
| Dimensions (W×D×H) | 330 × 400–420 × 315 mm |
| Weight | 15–16 kg |
| Brand | Logomatic |
|---|---|
| Origin | Germany |
| Model | Q2/Q2+ |
| Applicable Wafer Sizes | 6" and 8" |
| Max Ingot Length | 60 mm |
| Chuck Center Height | 125 mm |
| Machine Dimensions (L×W×H) | 1.8 m × 1.8 m × 1.9 m |
| Weight | 4.5 ton |
| Power Consumption | 4 kW |
| Spindle Speed | 3500 rpm |
| Integrated X-ray Orientation System | Yes |
| Peel Grinding Technology | Yes |
| Automated Notch & Flat Machining | Yes |
| Optical Notch Profile Inspection | Yes |
| Real-time Acoustic Emission & Force Sensing | Yes |
| Digital Twin Process Simulation | Yes |
| Centrifugal Pure Water Supply System (shared across up to 8 units) | Yes |
| Brand | Lumina |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT Series (AT1, AT1-Auto, AT2, AT2-EFEM) |
| Pricing | Available Upon Request |
| Brand | LynceeTec |
|---|---|
| Origin | Switzerland |
| Model | DHM R1000 MEMS |
| Measurement Principle | Digital Holographic Interferometry (DHI) |
| Operating Mode | Non-contact, Full-field, Single-shot 4D Imaging (3D topography + time) |
| Vertical Resolution | ≤5 pm |
| In-plane Displacement Resolution | ≤1 nm (sub-pixel algorithm) |
| Maximum Excitation Frequency | 25 MHz |
| Frame Rate | Up to 1.25 MHz (with burst mode) |
| Software | MEMSAnalysis Tool v5.x |
| Compliance | ASTM E2558, ISO/IEC 17025-compatible workflows, FDA 21 CFR Part 11 audit trail support (optional), GLP/GMP-ready metadata logging |
| Brand | M&R |
|---|---|
| Origin | Taiwan |
| Model | AA-8N-LED |
| Light Source | UV LED |
| Maximum Substrate Size | ≤4-inch wafers (including irregular shapes) |
| Overlay Alignment Accuracy | ±1 µm |
| Optical Resolution | ≤1 µm |
| Configuration | Standalone benchtop system for contact-mode lithography and manual/semi-automated bond alignment |
| Brand | Makeway |
|---|---|
| Origin | USA |
| Model | MKW-280 |
| Mask Size | 5 in |
| Wafer/Substrate Size | 5 in |
| Alignment Accuracy | 1 µm (Vacuum Contact), 1.5 µm (Hard Contact), 3 µm (Soft Contact), 5 µm (Proximity Mode) |
| UV Source | 350 W, 365 nm, uniformity ±3%, irradiance 30 mW/cm² |
| Exposure Time Range | 0.1–999 s |
| Chuck Motion | Manual X/Y/Z/θ with wedge compensation leveling |
| Microscopy | Dual CCD-based system, 80×–400× standard, up to 1000× with optional lenses, working distance 50–150 mm |
| Display | 20" LCD monitor |
| Contact Modes | Vacuum contact (adjustable force), hard contact, soft contact, proximity (gap adjustable) |
| Power Supply | 220 V, single-phase, 15 A |
| Optional | Deep UV source, IR alignment mode, custom substrate chucks |
| Brand | Makeway |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Region of Origin | Domestic (China) |
| Model | MKW-320 |
| Price Range | USD 21,000 – 55,000 |
| Brand | Makeway |
|---|---|
| Model | MKW-3800 |
| Origin | Shanghai, China |
| Measurement Principle | Non-contact structured light reflectometry |
| Sample Diameter | 2–8 inch wafers |
| Sampling Interval | down to 0.1 mm (full-field uniform sampling) |
| Measurement Time | <30 s (for 6-inch wafer, full aperture) |
| Warpage Range | 0.5–5000 µm |
| Warpage Repeatability | ±0.2 µm or ±1% |
| Warpage Accuracy | ±0.5 µm or ±1.5% |
| Stress Range | 1–10,000 MPa |
| Curvature Radius Range | 0.5–10,000 m |
| Curvature Repeatability | <1% (1σ @ 25 m radius) |
| Stress Repeatability | ±1.5 MPa or ±1% |
| Compatible Substrates | Si, GaAs, LiTaO₃, glass, sapphire, InP, SiC, GaN, bonded wafers, patterned wafers, square optical substrates |
| Compatible Films | Si, SiO₂, SiNₓ, Al₂O₃, TiO₂, photoresist, metal films, adhesives, nano-polymeric films, hybrid organic/inorganic films |
| Software | Stress Mapper (real-time acquisition, Stoney equation-based stress calculation, polynomial fitting, spatial filtering, ROI analysis, time-resolved & temperature-dependent stress profiling) |
| Brand | Makeway |
|---|---|
| Model | MKW-2800 |
| Measurement Principle | 3ω Method |
| Temperature Control Range | Ambient to 200 °C (typical for thin-film thermal characterization) |
| Electrical Excitation Frequency | 1–10 Hz (optimized for 3ω harmonic detection) |
| Thermal Conductivity Range | 0.1–500 W/(m·K) |
| Resolution | <±2% (relative, under controlled lab conditions) |
| Compliance | ASTM E1461, ISO 22007-4, USP <1031> (thermal property validation) |
| Software Interface | Windows-based with real-time data acquisition, harmonic phase analysis, and temperature-swept conductivity mapping |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | MaskTrack Pro |
| Application Scope | Automated cleaning, bake, and develop for photomasks & reticles |
| Compatibility | 90 nm to sub-1x nm half-pitch nodes |
| Process Capabilities | Front-side & backside cleaning, sulfur-free chemistry option, integrated particle detection readiness |
| Architecture | Cluster-compatible platform (with InSync, backside particle inspection, EUV mask storage) |
| Regulatory Context | Designed for ISO Class 1–5 cleanroom integration, supports GLP/GMP-aligned process documentation |
| Brand | Truth Instruments Company Limited |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (PRC) |
| Model | MBE-400 |
| Quotation | Upon Request |
| Substrate Heating | 2-inch Wafer Compatibility |
| Base Pressure | ≤1×10⁻¹⁰ mbar |
| Substrate Temperature Control | Room Temperature to 800 °C |
| Effusion Cell Sources | 6–10 Knudsen Cells |
| Brand | MCF |
|---|---|
| Origin | Germany |
| Model | customized-17 |
| Platen Diameter | ≥508 mm (20 inch) |
| Platen Speed | 30–200 rpm |
| Wafer Pressure Range | 70–500 g/cm² |
| Retaining Ring Pressure Range | 70–700 g/cm² |
| Carrier Head Speed | 30–200 rpm |
| Oscillation Amplitude | ±10 mm |
| Slurry Delivery | 3-channel peristaltic pump system with adjustable flow and positionable nozzles |
| Endpoint Detection | Integrated friction force & infrared surface temperature monitoring |
| Control System | PC-based industrial controller with touchscreen HMI, 20 programmable recipes, up to 6 process stages per recipe |
| Within-Wafer Non-Uniformity (WIWNU, 1σ, EE=5 mm) | ≤5% |
| Wafer-to-Wafer Non-Uniformity (WTWNU) | ≤5% |
| Brand | McScience |
|---|---|
| Origin | South Korea |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | M6000 |
| Pricing | Upon Request |
| Brand | Mengqi |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Wafer Size Capacity | 8-inch |
| Grinding Wheel OD | 203 mm |
| Spindle Speed Range | 0–6000 rpm |
| Chuck Rotation Speed | 0–400 rpm |
| Z-Axis Stroke | 130 mm |
| Z-Axis Feed Rate | 0.1–1000 µm/sec (optional down to 0.01 µm/sec) |
| In-situ Thickness Measurement Resolution | 0.1 µm |
| In-situ Thickness Repeatability | ±0.001 mm |
| Material Compatibility | Si, GaAs, SiC, GaN, Sapphire, and other brittle semiconductor substrates |
| Customization | Fully configurable chuck, coolant delivery, metrology integration, and process recipe management |
| Brand | MicroChem Corp |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Line | AZ1500 Series |
| Solvent System | Propylene Glycol Monomethyl Ether Acetate (PGMEA) |
| UV Sensitivity Range | 310–440 nm (i-, h-, g-line) |
| Recommended Development Time | AZ1500/AZ1514H: 50–60 s |
| AZ1500HS | 20–30 s |
| Compatible Developers | AZ 351B (1:4 dilution), 0.5% NaOH, AZ 726MIF |
| Film Thickness Range | 0.5–4.0 μm (spin-coated) |
| Storage Conditions | 0–25°C, sealed container, light-protected |
| Shelf Life | Batch-specific (see label: YYYY/MM/DD) |
| Compliance | Fully compatible with standard semiconductor cleanroom protocols and ISO Class 5–7 environments |
| Brand | MicroXact |
|---|---|
| Model | MPS-C-300 |
| Category | RF Probe Station |
| Wafer Size Capacity | Up to 200 mm (standard 10–150 mm) |
| Magnetic Field Range | ±6 kOe (±0.6 T) in 3D vector configuration |
| Field Directional Accuracy | ±1.0° |
| Field Uniformity | ±2% over 10 mm diameter |
| Field Stability | <0.1% over 24 h |
| Minimum Field Resolution | 200 mG |
| Frequency Bandwidth | DC to ~67 GHz |
| Motion Range (X-Y) | 100 mm × 100 mm |
| Chuck Type | Isolated / Grounded / Coaxial configurable |
| Control Software | LabVIEW-based, open-source, modular API |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Type | Electrostatic Chuck (E-chuck) |
| Application | Wafer-level and Die-level Fixturing in Wet Etching & MEMS Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Control Interface | Analog voltage input (0–10 V) or digital RS-485 |
| Holding Force Range | Adjustable up to 0.1–0.8 N/cm² depending on die size and surface condition |
| Substrate Compatibility | Si, SiO₂, SiN, SOI, GaAs, quartz, and patterned MEMS wafers |
| Operating Temperature | Ambient to 80 °C |
| Vacuum Requirement | Optional backside helium cooling interface (compatible with standard wafer chucks) |
| Material | Al₂O₃ ceramic base with embedded bipolar or monopolar electrode architecture |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Model | IR-M (Infrared Microscope) |
| Optical Magnification Options | 2.5×, 5×, 10× |
| Wafer Compatibility | 100 mm (4″), 150 mm (6″), 200 mm (8″) |
| Spatial Resolution | ≤3 µm (at 5× objective, transmission mode) |
| Detection Sensitivity | Defects ≥3 µm resolvable in Si wafers under IR transmission |
| Illumination Modes | Top-side visible illumination (reflected mode) + Through-wafer infrared illumination (transmission mode) |
| Imaging Sensor | IR-sensitive CMOS camera with USB 3.0 interface |
| Stage | Manual or motorized XY stage (Ø ≤200 mm wafer support) |
| Application Domain | Silicon IC & MEMS wafer-level defect inspection, SOI layer visualization, buried structure analysis |
| Brand | Midas |
|---|---|
| Origin | South Korea |
| Manufacturer Status | Authorized Distributor |
| Origin Category | Imported |
| Model | MDA-400LJ |
| Pricing | Upon Request |
| Mask Size Max | 5-inch |
| Substrate Size Max | 4-inch circular wafers |
| Beam Shape | Circular |
| Beam Diameter | 125 mm |
| Light Source | UV LED |
| Wavelength | 365 nm |
| Beam Uniformity | < ±3 % |
| Peak Irradiance at 365 nm | 25 mW/cm² |
| Alignment Method | Manual |
| Alignment Accuracy | ±1 µm |
| Exposure Modes | Soft Contact, Hard Contact, Proximity (Vacuum-assisted) |
| Resolution | 1 µm (with 1 µm photoresist thickness under vacuum contact) |
| Weight | 150 kg |
| Dimensions (W×D×H) | 995 × 800 × 850 mm |
| Brand | MIDAS |
|---|---|
| Origin | South Korea |
| Model | MDA-400M |
| Exposure Source | Ushio 350W UV Lamp (or optional 365 nm LED, 10,000 h lifetime) |
| Resolution | 1 µm (vacuum/hard contact), 2 µm (soft contact), 5 µm (20 µm gap proximity) |
| Beam Size | 4.25 × 4.25 inch |
| Uniformity | ≤3% (over 4-inch field) |
| Intensity | >30 mW/cm² @ 365 nm |
| Exposure Time | 0.1–999.9 s |
| Alignment Accuracy | ±0.5 µm |
| Stage Travel | X/Y ±10 mm, θ ±5°, Z ±10 mm |
| Approach Step Resolution | 1 µm |
| Microscopy | Dual CCD zoom microscope (80×–480×), 17″ LCD monitor |
| Substrate Compatibility | 2″, 3″, 4″ wafers |
| Mask Size | 4″ and 5″ |
| Vacuum Requirement | < −200 mbar (integrated oil-free pump) |
| CDA | >5 kg/cm² |
| N₂ | >3 kg/cm² |
| Power | 220 V, 15 A, single-phase |
| Brand | Midas |
|---|---|
| Origin | Germany |
| Model | SPIN150X |
| Max. Rotation Speed | 12000 rpm |
| Speed Accuracy | ±1 rpm |
| Max. Acceleration | 30000 rpm/s |
| Substrate Diameter | up to 160 mm (6") |
| Chamber Diameter | 202 mm |
| Controller Memory | 50 programs × 99 steps each |
| Programmable Outputs | 2 dry-contact relays |
| Dimensions (W×D×H) | 275 × 240 × 450 mm |
| Housing Material | Natural Polypropylene (NPP) or PTFE options |
| Sample Compatibility | 5 mm to 160 mm round wafers or 4" × 4" square substrates |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | VPE (HF Vapor Phase Etcher) |
| Price Range | USD 68,000 – 136,000 |