Semiconductor Instruments
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Showing 391–420 of 541 results
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |
| Brand | SPS-POLOS |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Category | Imported Instrument |
| Model | BEAM |
| Resolution | 0.8 µm (CD) |
| Light Source | Laser Galvanometer + 405 nm Laser Diode |
| Exposure Field | 150 mm × 150 mm |
| Substrate Compatibility | 4″–6″ wafers |
| Focus Actuation | Piezoelectric auto-focus with closed-loop optics (<1 s settling time) |
| Alignment | Semi-automatic multi-layer collimation (completed in minutes) |
| Compatible Resist | AZ5214E |
| Software Interface | GDSII-native GUI with wafer-level navigation, layer overlay, and CNC-style motion control |
| Brand | PolyPico |
|---|---|
| Origin | Denmark |
| Model | UniA6 |
| Imprint Methods | Thermal, UV (365 nm), Vacuum-assisted |
| Max Substrate/Stamp Diameter | 210 mm (8″) |
| Chamber Height | 20 mm |
| Max Imprint Pressure | 11 bar |
| Thermal Range | Up to 200 °C (optional 250 °C module) |
| UV Wavelengths | 365 nm (standard), 405 nm (optional) |
| Vacuum Level | ≤ 0.1 mbar |
| Control | Fully automated via laptop-based software |
| Form Factor | Benchtop, modular, plug-and-play |
| Brand | ZENO |
|---|---|
| Origin | Shanghai, China |
| Model | PULSAR L-Series & PULSAR H-Series |
| Category | Semiconductor Wafer Defect Detection Instrument |
| Manufacturer Type | Authorized Distributor |
| Regional Classification | Domestic (China) |
| Pricing | Upon Request |
| Brand | PULUODY |
|---|---|
| Origin | Shaanxi, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | PMT-2 |
| Price | USD 72,800 (FOB) |
| Detection Principle | Dual-Laser Narrow-Beam Light Scattering |
| Sensor Generation | 8th-Generation Dual-Laser Optical Sensor |
| Flow Control | Precision Plunger Pump + Electromagnetic Flow Regulation |
| Calibration Standards | ISO 21501-4, USP <788>, EP 2.9.19, ChP 2020 Vol. IV, GB 8368 |
| Measurement Range | 0.1–1.0 µm (standard), customizable 1–100 µm or 4–70 µm(c), down to 0.1 µm(c) |
| Sampling Accuracy | <±1% |
| Counting Accuracy | ±3% typical |
| Coincidence Limit | 1000 particles/mL (2.5% coincidence error) |
| Output Interface | 4–20 mA analog output,超标 alarm relay (customizable) |
| Data Output | iPad-compatible wireless acquisition, touchscreen GUI + optional PC software (V8.3 Integrated Edition) |
| Power Supply | 100–265 VAC, 50–60 Hz |
| Compliance Architecture | Separated analytical testing & metrological calibration modules |
| Regulatory Alignment | Supports FDA 21 CFR Part 11 audit trail configuration (via optional software license), GLP/GMP-compliant reporting templates |
| Brand | PULUODY |
|---|---|
| Model | PMT-2 |
| Sensor Technology | 8th-Generation Dual-Laser Narrow-Beam Detection |
| Detection Range | 0.03–3000 µm (configurable sub-ranges: 1–100 µm, 4–70 µm(c), or 0.1 µm(c)) |
| Accuracy | ±3% typical |
| Sampling Precision | <±1% |
| Coincidence Limit | ≤2.5% at 1000 particles/mL |
| Calibration Standards | JJG 1061, ISO 21501-2, NIST-traceable latex spheres |
| Output | 4–20 mA analog interface with customizable alarm thresholds |
| Data Reporting | Particles per mL & ISO 4406 / NAS 1638 contamination codes |
| Power Input | 100–265 VAC, 50–60 Hz |
| Software | PULUODY V8.3 Analysis & Calibration Suite (PC + integrated touchscreen UI) |
| Compliance | Designed for GLP/GMP-aligned environments |
| Brand | PULUODY |
|---|---|
| Model | PMT-2CCS |
| Detection Threshold | 100 nm |
| Sensor Technology | 8th-Generation Dual-Laser Narrow-Beam Optical Sensor |
| Measurement Range | 0.1–0.5 µm (with customizable ranges: 1–100 µm or 4–70 µm(c), down to 0.1 µm(c)) |
| Sampling Accuracy | < ±1% |
| Counting Accuracy | < ±3% (typical) |
| Coincidence Limit | 1000 particles/mL (2.5% coincidence error) |
| Flow Control | Precision Piston Pump + Electromagnetic Flow Regulation |
| Calibration Standards | JJG 1061, ISO 21501, Polystyrene Latex (PSL) Spheres |
| Output Interface | 4–20 mA Analog Signal |
| Alarm Function | Configurable Particle Exceedance Alert |
| Power Input | 100–265 VAC, 50–60 Hz |
| Compliance | Designed for ISO 14644-1/2, SEMI F57, ASTM D6978, USP <788> & <789>, and GLP/GMP-aligned data integrity workflows |
| Brand | PVA TePla |
|---|---|
| Origin | USA |
| Model | 80 Plus |
| Plasma Source Options | RF (13.56 MHz) or Microwave (2.45 GHz) |
| Chamber Configuration | Electrode-equipped (RF) or Electrode-less (Microwave) |
| Operation Modes | Manual and Automated Integration Capable |
| Compliance | Designed for Semiconductor Cleanroom Environments (Class 100 / ISO Class 5 compatible) |
| Integration | Standalone or Inline Production Line Compatible |
| Software Interface | Intuitive GUI with Parameter Logging and Recipe Management |
| Brand | PVA TePla |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | SAM Premium |
| Pricing | Available Upon Request |
| Brand | PVD |
|---|---|
| Origin | United Kingdom |
| Manufacturer Status | Authorized Distributor |
| Import Status | Imported |
| Model | Q-One |
| Product Type | Low-Energy High-Current Ion Implanter |
| Application Domain | IC Ion Implantation |
| Implantation Energy | 25 kV Liquid Metal Ion Source (LMIS) |
| Implantation Dose Control | Deterministic Single-Ion Delivery |
| Wafer Size Support | 6-inch |
| Available Ion Species | >40 elements selectable via LMIS and mass-filtered column |
| Brand | PVD |
|---|---|
| Origin | USA |
| Distributor Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Standard Particles |
| Price | Upon Request |
| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Quantum Device Manufacturing |
| Implantation Energy | 50 keV |
| Wafer Size Compatibility | 8–12 inch |
| Implant Species | p⁺ (H⁺, B⁺, As⁺, P⁺, etc.) |
| Ion Source Options | Liquid Metal Ion Source (LMIS) & Plasma Ion Source |
| Beam Current Range | sub-fA to ~100 pA |
| Detection Efficiency | ≥98% |
| Positional Accuracy | <20 nm (3σ) |
| Stage Resolution | ≤1 nm (closed-loop) |
| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Implant Energy | 50 keV |
| Wafer Size | 8–12 inch |
| Implant Species | p⁺ (proton) |
| Ion Source Options | Liquid Metal Ion Source (LMIS), Plasma Ion Source |
| Beam Current | sub-femtoampere (fA) range |
| Positioning Accuracy | < 10 nm |
| Detection Efficiency | ≥ 98% |
| Compliance | ISO 14644-1 Class 4 cleanroom compatible, CE-marked, RoHS compliant |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q235 (Q-Series) |
| Type | Benchtop Microwave Plasma Asher/Stripper |
| Application Domain | Semiconductor Front-End-of-Line (FEOL) & MEMS Fabrication |
| Compliance | CE-marked, ISO 9001–certified manufacturing, compatible with cleanroom Class 100/ISO 5 environments |
| Brand | Qiyue Technology |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MINI-ALD4 |
| Substrate Size | Up to 100 mm (4-inch) wafers |
| Chamber Architecture | Dual-chamber (reaction + load-lock) |
| Heating System | Radiant heating with high temperature uniformity |
| Gas Delivery | Optimized laminar flow path with precursor bottle heating, heated transfer lines, and adjustable pulsing sequence |
| Optional Modules | Plasma source, powder ALD module, ozone generator |
| Film Compatibility | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), nitrides (e.g., TiN, TaN), pure metals (e.g., Pt, Ru), and doped compounds |
| Brand | 1124123/13213112 |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Quant Nuova |
| Pricing | Upon Request |
| Brand | Raith / Simax |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | PicoMaster XF ATE-200 |
| Exposure Mode | Proximity Mode |
| Resolution | 600 nm |
| Light Source | GaN Laser Diode |
| Wavelength | 405 nm |
| Illumination Uniformity | ±5% |
| Maximum Exposure Area | 200 mm × 200 mm |
| Maximum Write Speed | 280 mm²/min |
| Minimum Feature Size | 600 nm |
| Brand | Raith |
|---|---|
| Origin | Germany |
| Model | Pioneer Two |
| Electron Source | Thermal Field Emission Gun |
| Accelerating Voltage Range | 20 V – 30 kV |
| Minimum Guaranteed Resolution (Line Width) | ≤8 nm |
| Stage Travel (X/Y/Z) | 50 mm × 50 mm × 25 mm |
| XY Positioning Accuracy | ±2 nm |
| Overlay/Pattern Stitching Accuracy | ≤50 nm |
| Imaging Magnification Range | 20× – 1,000,000× |
| Optional Add-ons | Backscattered Electron Detector (BSED), Energy-Dispersive X-ray Spectrometer (EDS), Tilt-Rotation Stage Module |
| Brand | Rayscience |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Semiconductor Instrument |
| Model | CDE ResMap |
| Automation Level | Fully Automated |
| Probe Tip Material | Tungsten Carbide |
| Typical Probe Load Force | 100–200 g |
| Compatible Wafer Sizes | 50 mm (2″) to 150 mm (6″) |
| Measurement Mode | Four-Point Collinear Probe (Van der Pauw geometry compatible) |
| Data Acquisition Rate | Up to 4,000 data points per measurement site |
| Interface | Windows-based GUI with recipe-driven operation |
| Calibration Interval | Extended (≥12 months under GLP-compliant usage) |
| Configurable Probe Heads | Dual–quadruple probe head options for 300 mm platform (not included in base model) |
| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |
| Brand | RKD |
|---|---|
| Origin | USA |
| Model | Elite Etch Cu Chemical Decapsulation System |
| Fluid Delivery Precision | Micro-dosed HNO₃ / H₂SO₄ / mixed acid |
| Maximum Acid Flow Rate | 8 mL/min |
| Acid Temperature Control Range | 10–250 °C |
| Minimum Wire Diameter Compatible | 0.8 mil (20.3 µm) Cu |
| Safety Features | Dual-sealed fluid interfaces, real-time leak detection, N₂ pressure interlock, fiber-optic lid sealing verification, cooled waste acid collection (<90 °C) |
| Control Interface | External handheld keypad |
| Compliance | Designed for ISO/IEC 17025 lab environments |
| Brand | RKD |
|---|---|
| Origin | USA |
| Model | RA-880 Laser Decapsulation System |
| Application | Semiconductor Plastic Encapsulant Removal |
| Compliance | Designed for ISO/IEC 17025-aligned failure analysis labs |
| Software Control | Windows-based real-time co-focal imaging & programmable laser scanning platform |
| Laser Type | Q-switched Nd:YAG (1064 nm) with variable pulse width and energy modulation |
| Focus Control | Auto-focus sensor with programmable depth-of-field (DOF) adjustment |
| Imaging | Integrated high-resolution coaxial CCD with 10×–50× optical zoom and real-time overlay of scan path |
| Pattern Definition | Vector-based graphical interface supporting DXF, JPEG, BMP import |
| Energy Management | Closed-loop pulse energy monitoring with ±2% stability |
| Reproducibility | <±3 µm positional repeatability across >1000 cycles |
| Maintenance | Solid-state laser source |
| Brand | ROOKO |
|---|---|
| Model | FT-361 |
| Origin | Zhejiang, China |
| Automation Level | Manual |
| Compliance | GB/T 1551–2018 (Silicon Single Crystal Resistivity Test Method), ASTM F84–20 |
| Sheet Resistance Range | 10⁻⁶–2×10² Ω/□ |
| Resistivity Range | 10⁻⁷–2×10³ Ω·cm |
| Test Current | 0.1 μA, 1 μA, 10 μA, 100 μA |
| Current Accuracy | ±0.1% of reading |
| Resistance Measurement Accuracy | ≤0.3% |
| Overall System Uncertainty | ≤4% (verified against NIST-traceable standard wafers) |
| Probe Spacing Options | 1 mm, 2 mm, 3 mm |
| Probe Tip Materials | Tungsten Carbide, Stainless Steel, Gold-Plated Phosphor Bronze Hemispherical Tips |
| Display | 4.3-inch TFT LCD showing R, ρ, Rₛ, T, σ, d, αₜ, V, I, probe geometry, spacing, thickness, unit conversion |
| Power Input | AC 220 V ±10%, 50 Hz |
| Max Power Consumption | <30 W |
| Optional Accessories | PC control software (with audit trail & CSV/PDF export), square probe head, linear probe head, motorized XYZ test stage, thermal chamber interface kit |
| Brand | ROOKO |
|---|---|
| Origin | Zhejiang, China |
| Model | FT-371 |
| Measurement Range | 10¹–2×10¹⁰ Ω/□ |
| Resistivity Range | 10²–2×10¹¹ Ω·cm |
| Test Current | 1 mA – 1 pA |
| Current Accuracy | ±0.1% of reading |
| Resistance Accuracy | ≤5% (≤10⁸ Ω), ≤20% (>10⁸ Ω) |
| Display | 4.3" LCD showing R, ρ, Rₛ, T, σ, probe geometry, spacing, thickness, temp. coeff., I/V |
| Measurement Method | Dual-electrode four-point probe (linear or square configuration) |
| Power Supply | AC 220 V ±10%, 50 Hz, <30 W |
| Overall Uncertainty | ≤4% (certified standard sample) |
| Optional Accessories | PC control software, square probe head, linear probe head, temperature-controlled test platform, probe spacing (1/2/3 mm), probe tip materials (tungsten carbide, stainless steel, gold-plated phosphor bronze hemispherical) |
| Brand | Ruipho |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | RZJ-304 |
| Viscosity Options | 25 mPa·s |
| Recommended Developer | RZX-3038 |
| Film Thickness Range (Spin-Coated) | 1.0–3.5 µm |
| Prebake | 100°C for 90 s |
| Exposure Dose | 50–75 mJ/cm² |
| Development | RZX-3038 at 23°C for 60 s |
| Post-Exposure Bake | 120°C for 120 s |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-100ST |
| Substrate Diameter | Ø100 mm (4") |
| Deposition Temperature Range | 80–400 °C |
| SiO₂ Deposition Rate | >300 nm/min |
| Maximum Film Thickness | Up to 100 µm |
| Deposition Technology | Liquid-source PECVD with RF self-bias coupling |
| Precursor Type | Liquid TEOS (tetraethyl orthosilicate), optional Ge/P/B dopant sources |
| Stress Control | Low-stress SiO₂ via self-bias tuning |
| Step Coverage | High-aspect-ratio conformality |
| Footprint | Compact, cleanroom space-optimized |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-220N |
| Wafer Capacity | 5 × ø3″, 3 × ø4″, or 1 × ø8″ wafers |
| Footprint Reduction | 40% vs. legacy SAMCO PECVD platforms |
| Process Gases | SiH₄, NH₃, N₂O, TEOS (optional add-on), O₂, Ar, N₂ |
| Plasma Source | RF (13.56 MHz) capacitive coupling |
| Chamber Material | Anodized aluminum with quartz-lined process zone |
| Vacuum System | Dry scroll pump + optional turbo-molecular pump |
| Compliance | CE-marked, compatible with ISO 14644-1 Class 5 cleanroom integration |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-200C |
| Etching Principle | Capacitively Coupled Plasma (CCP) Reactive Ion Etching |
| Uniformity | ±2% across 200 mm wafer |
| Configuration | Direct-Load, Parallel-Plate Electrode Architecture |
| Upgrade Options | Endpoint Detection, High-Capacity Vacuum Pumping, Load Lock Integration, Multi-Gas Delivery System |
| Control Architecture | Client-Server Software with PLC-Based Real-Time Hardware Control |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with SEMI S2/S8 safety standards |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-350iPC |
| Maximum Wafer Diameter | Ø350 mm |
| ICP Source Technology | HSTC™ (Hyper Symmetrical Tornado Coil) |
| Vacuum Pumping | Turbo Molecular Pump (TMP) with Symmetrical Exhaust Design |
| Gas Delivery | Optimized Multi-Channel Manifold |
| Endpoint Detection | Optional Optical Interferometric Monitoring System |
| Application Scope | GaN, GaAs, InP, SiC, SiN, SiO₂, Dielectrics, Metals, PSS Fabrication |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-800BCT |
| Type | Production-Grade Deep Silicon Etching System |
| Discharge Mode | Inductively Coupled Plasma (ICP) |
| Etch Aspect Ratio | >100 |
| Process Capability | High-Rate, High-Selectivity DRIE |
| Application Focus | MEMS, TSV, Power Devices, SOI Wafer Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Control Architecture | Fully automated recipe-driven operation with real-time RF/power monitoring |