Thin Film Growth Equipment
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| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SVTA-LMBE |
| Pricing | Available Upon Request |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | SVTA-MAN |
| Vacuum Compatibility | Ultra-High Vacuum (UHV) |
| Max Substrate Temperature | 1400 °C |
| X-Y Positioning Resolution | 1 µm |
| X-Y Repeatability | ±1 µm |
| X-Y Travel Range | ±0.5 inch |
| Z Travel Range | 4.0 inch |
| Z Resolution | 1 mm (or 1/32 inch) |
| Z Repeatability | ±1 mm (or ±1/32 inch) |
| Rotary Accuracy | ±1.25° |
| Rotary Hysteresis | <1° |
| Corrosion-Resistant Options | O₂-compatible, NH₃-compatible |
| Substrate Diameter Support | 1″ to 8″ |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | SVTA-O3 |
| Configuration | Integrated Ozone Generation, Cryogenic Storage & Controlled Delivery Subsystem |
| Compliance | Designed for UHV-Compatible MBE Integration |
| Control Interface | Touchscreen HMI + RoboMBE™ Remote Software Suite |
| Gas Purity | >99.999% O₃ (Ozone-in-O₂ basis), <1 ppm NOₓ/H₂O hydrocarbon contaminants |
| Operating Pressure Range | 1×10⁻⁸ to 1×10⁻³ Torr (process chamber interface) |
| Ozone Concentration Range | 1–15 wt% in oxygen carrier gas |
| Cryogenic Trap Temperature Range | –120 °C to –40 °C (programmable) |
| Delivery Line Material | Electropolished 316L SS + Fluorosilicone-elastomer-sealed VCR® fittings |
| Cooling | Integrated recirculating chiller (water-cooled ozone injector head) |
| Footprint | 600 mm × 750 mm × 1,200 mm (W×D×H) |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | SVTA-SF |
| Flange Sizes | 10" to 22" |
| Evaporation Port Count | 4 (2.75") to 8 (4.625") |
| Cooling Option | Liquid Nitrogen or Water-Cooled Backplate |
| Integrated Viewport | Center-Mounted |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | SVTA-VC-45 |
| Heating Zones | As (2-zone), P/Sb/Te/Se/S (3-zone) |
| Cooling | Integrated water-cooled jackets for evaporator body, valve, cracking tube, and PBN crucible |
| Control Options | Manual needle valve (standard), computer-controlled ACM valve (optional, SVTA-VC-ACM) |
| Software Integration | Compatible with RoboMBE® |
| Crucible Materials | High-purity PBN, molybdenum, or tantalum |
| Vacuum Compatibility | UHV (≤1×10⁻¹⁰ Torr) |
| Source Capacities | 200 cm³ or 500 cm³ |
| Compliance | Designed for GLP/GMP-aligned MBE process environments |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | WP-15 |
| Cleaving Capacity | 15 mm × 15 mm input wafer (10–32 mm square configurable) → 15 × 1 mm × 15 mm bar strips (bar width: 1–5 mm adjustable) |
| Vacuum Compatibility | UHV (<1×10⁻⁹ Torr) |
| Flange | 8-inch CF (ConFlat), bakeable to 180 °C (200 °C optional) |
| Sample Orientation | Dual-axis alignment (X/Y-direction cleaving) |
| Loading | Cassette-based, load-lock compatible |
| Integrated Option | In-situ passivation deposition module (e.g., SiO₂, SiNₓ, Al₂O₃) |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Laser MBE |
| Pricing | Available Upon Request |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Co-Sputter |
| Instrument Type | Magnetron Sputtering Deposition System |
| Substrate Size | 12-inch (300 mm) |
| Substrate Temperature Range | Up to 1000 °C |
| Film Thickness Uniformity | ±3% |
| Base Pressure | 1×10⁻⁸ Torr |
| Sputter Sources | Up to 8 magnetron cathodes |
| Power Options | DC, Pulsed DC, RF |
| Gas Lines | Up to 4 mass flow controlled lines |
| Optional KRI Ion Source | Yes |
| Load-Lock Configuration | Single- or multi-wafer compatible |
| Vacuum Sealing | All-CF flanged, bakeable |
| Process Monitoring | Full-range vacuum gauges + Baratron capacitance manometer |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D environments |
| Brand | SYSKEY |
|---|---|
| Origin | Taiwan |
| Model | E-beam |
| Instrument Type | Electron Beam Evaporator |
| Substrate Size | Up to 12-inch wafer |
| Substrate Temperature Range | Ambient to 800 °C (heating) / Down to –70 °C (liquid nitrogen cooling) |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤5×10⁻¹⁰ Torr (with cryopump) |
| Crucible Configuration | 1–6 water-cooled rotating crucibles (7–25 cc each) |
| Optional Integration | KRI ion source, load-lock, transfer chamber, glovebox, plasma cleaner |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | FPD-PVD |
| Instrument Type | Magnetron Sputtering Coater |
| Substrate Size | Up to 12-inch (300 mm) wafers or 550 × 650 mm² glass panels |
| Base Pressure | ≤1×10⁻¹⁰ Torr |
| Substrate Temperature Range | Ambient to 1000°C (with high-temp heating stage option) |
| Thickness Uniformity | ±3% across full substrate |
| Configurable Chamber Count | 4 independent sputter chambers |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China (Taiwan) |
| Model | In-Line Sputter |
| Instrument Type | Magnetron Sputtering Deposition System |
| Application Field | Microelectronics |
| Maximum Substrate Size | 1100 × 1300 mm² (glass) |
| Substrate Temperature Range | Up to 400 °C |
| Film Thickness Uniformity | ±5% |
| Ultimate Vacuum | 10⁻⁷ Torr |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Lift-Off E-beam |
| Instrument Type | Electron Beam Evaporator |
| Application Domain | Microelectronics |
| Substrate Diameter | 12-inch (300 mm) |
| Maximum Substrate Temperature | 800 °C |
| Film Thickness Uniformity | ±3% |
| Base Pressure | 10⁻⁸ Torr |
| Cooling Options | Water-cooled or Liquid Nitrogen-cooled Substrate Holder (down to –70 °C) |
| Source Configuration | Multi-pocket e-beam gun (1/2/4/6 pockets) |
| Deposition Modes | Sequential or Co-evaporation |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Metal Thermal |
| Instrument Type | Thermal Evaporation Coater |
| Application Field | Solar Cells, Nanomaterials, Metal Thin Film Research |
| Substrate Size | Up to 12-inch wafer or 470 × 370 mm² glass |
| Substrate Temperature Range | Ambient to 800 °C |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤1×10⁻⁸ Torr |
| Vacuum Sealing | Nickel gasket + Viton O-rings |
| Evaporation Sources | Multiple configurable boat/crucible sources (7–25 cc) |
| Substrate Manipulation | Rotatable heated stage, adjustable source-to-substrate distance, individual shutters per source |
| Optional Integration | KRI ion source (for in-situ substrate cleaning and film densification), load-lock, glovebox interface, RGA, e-beam assist |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Equipment Type | Magnetron Sputter Deposition System |
| Substrate Size | Up to 300 mm (12-inch) |
| Base Pressure | ≤1×10⁻⁸ Torr |
| Substrate Temperature Range | Ambient to 600 °C |
| Thickness Uniformity | ±3% (across 300 mm wafer) |
| Sputter Sources | Up to 6 configurable magnetron cathodes (RF/DC/pulsed DC) |
| Gas Lines | Up to 4 mass flow controllers (Ar, N₂, O₂) |
| Substrate Motion | Planetary rotation + independent rotation |
| Optional Integration | KRI ion source, load-lock, RGA/OES ports, RF bias, film thickness monitor |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | OLED, OPV |
| Instrument Type | Thermal Evaporation Coater |
| Substrate Size | Up to 12-inch wafer or 470 × 370 mm |
| Thickness Uniformity | ±3% |
| Evaporation Source Control Resolution | 0.01 Å/s |
| Source Temperature Stability | ±0.1 °C |
| Alignment Accuracy (CCD-based mask-to-substrate) | ±5 µm |
| Base Pressure | ≤5 × 10⁻⁷ Torr |
| Chamber Material | 304 Stainless Steel |
| Max. Evaporation Sources | 12 |
| Cooling | External Water-Cooled Jacket |
| Integration Options | Load-lock transfer chamber, robotic handler, glovebox interface, RGA |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Organic Material |
| Instrument Type | Thermal Evaporation Coater |
| Application Field | Microelectronics |
| Substrate Size | 12-inch (300 mm) wafer or 470 × 370 mm² glass |
| Substrate Temperature Range | Up to 800 °C |
| Film Thickness Uniformity | ±3% |
| Ultimate Vacuum | 5 × 10⁻⁹ Torr |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Thermal ALD |
| Substrate Size | Customizable, up to 300 mm wafer |
| Process Temperature | Up to 400 °C (substrate heater) |
| Uniformity | ±1% |
| Precursor Channels | Up to 6, each independently heated to 200 °C |
| Pulse Valve Response Time | 10 ms |
| Chamber Material | Aluminum or stainless steel |
| Cooling | Integrated water-cooling system |
| Brand | SYSKEY |
|---|---|
| Origin | Taiwan |
| Manufacturer Type | Authorized Distributor |
| Instrument Type | Electron Beam Evaporator |
| Substrate Diameter | Up to 8 inches (203 mm) |
| Substrate Temperature Range | –70 °C (LN₂ cooling) to +800 °C |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤5×10⁻¹⁰ Torr |
| E-beam Source Configuration | 4–6 crucibles (7–25 cm³ each) |
| Vacuum Sealing | All-metal CF flanges with bakeable elastomer O-rings |
| Pumping System | Cryopump (standard), optional turbomolecular pump |
| Process Monitoring | Bayard-Alpert gauge + quartz crystal microbalance (QCM) |
| Control Mode | Sequential or co-evaporation |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D environments |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | UHV Sputter |
| Baseplate Size | Up to 12-inch (300 mm) wafers |
| Substrate Temperature Range | Ambient to 1000 °C |
| Film Thickness Uniformity | ±3% |
| Ultimate Vacuum | ≤5×10⁻¹⁰ Torr |
| Sputter Sources | Up to 8 configurable magnetron cathodes (RF/DC/pulsed DC) |
| Gas Lines | Up to 4 mass flow-controlled channels (Ar, N₂, O₂, etc.) |
| Chamber Sealing | All-metal ConFlat (CF) flanges, bakeable to 150 °C |
| Substrate Manipulation | Motorized rotation with ceramic bearing & internal water cooling |
| Optional Integration | Load-lock, transfer chamber, glovebox, ion source (100 keV Kr⁺), e-beam evaporation, RGA/OES ports |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Thermal-ALD E200S |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | Room Temperature to 500 °C (customizable) |
| Precursor Channels | Up to 6 independent precursor lines (customizable), supporting both solid and liquid precursors with individual source heating (RT–200 °C) |
| Reactant Gas Lines | 2 (customizable) |
| Carrier Gas | N₂ with Mass Flow Controllers (MFCs) |
| Pressure Monitoring | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5×10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touch-enabled display, embedded industrial PC (Windows 7), PLC-based real-time control with fieldbus support |
| Plasma Upgrade Port | Integrated PEALD interface for seamless thermal-to-plasma ALD mode transition without chamber replacement |
| Brand | Truth Instruments Company Limited |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | PLD-400 |
| Base Pressure | 5×10⁻⁹ mbar |
| Substrate Heating Range | Room Temperature to 1200 °C |
| Target Configuration | Six 1-inch or Three 2-inch targets (motorized rotation and revolution) |
| Substrate Size | Up to 2-inch wafers |
| Optional Add-ons | Liquid Nitrogen Cryo-Cooling Stage, Load-Lock Transfer Module, Reactive Gas Inlet System (O₂, N₂, Ar), In-situ Quartz Crystal Microbalance (QCM), Predefined Process Recipe Management, High-Pressure RHEED (up to 1×10⁻⁵ mbar), Electron Gun for LEED |
| Brand | Vector Scientific |
|---|---|
| Origin | Guangdong, China |
| Model | SLKX-102-11 |
| Film Thickness Uniformity | ≤±2.5% over 4-inch wafer area, ≤±3.5% over 8-inch wafer area (measured on Ti film, 200–500 nm, edge exclusion of 5 mm, 5-point random sampling) |
| System Architecture | Interconnected multi-chamber PVD platform with load-lock and transfer robot |
| Base Pressure | ≤5×10⁻⁸ Torr (typical, after bake-out) |
| Chamber Interface Standard | CF flanges (DN100/DN160 compatible) |
| Target-to-Substrate Distance | Externally adjustable manually |
| Control Architecture | Modular PLC + real-time OS with role-based user permissions |
| Compliance | Designed to support GLP/GMP-aligned process documentation |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Fiji G2 Plasma ALD |
| Substrate Size | Up to 200 mm |
| Process Temperature | 500°C for 200 mm wafers |
| Precursor Channels | Standard 4, upgradeable to 6 |
| Dimensions (W × H × D) | 1845 × 715 × 1920 mm |
| Uniformity (1σ) | Thermal Al₂O₃ – 1.5% |
| Power Supply | 220–240 VAC, 4200 W per reactor (excl. pumps) |
| Cycle Time | <2 s per cycle (Al₂O₃ at 200°C) |
| Precursor Source Capacity | 50 cc stainless steel ampoules (max. 25 mL fill) |
| Carrier/Plasma Gases | 100 sccm Ar (precursor), 500 sccm Ar (plasma), 100 sccm N₂, 100 sccm H₂, 100 sccm O₂ (all MFC-controlled) |
| Valve Response Time | ≤10 ms |
| Independent Precursor Heating | Up to 200°C |
| Maximum Sample Height | 57 mm |
| In-situ Options | QCM, spectroscopic ellipsometry, RGA port, optical emission spectroscopy (OES), ozone generator, LVPD, integrated glovebox, substrate biasing |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Firebird Batch Thermal ALD System |
| Substrate Compatibility | Seamless wafer size conversion up to 300 mm |
| Process Type | Thermal atomic layer deposition (ALD) |
| Throughput | Up to 40,000 wafers per month |
| Film Types | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), encapsulation layers, optical coatings |
| Chamber Architecture | Modular batch reactor with integrated thermal management |
| Compliance | Designed for semiconductor high-volume manufacturing (HVM) environments |
| Automation Level | Fully automated, recipe-driven operation |
| System Integration | Compatible with factory automation standards (SECS/GEM) |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | GEN10 |
| Configuration | Cluster-tool architecture with up to three material-specific growth chambers |
| Vacuum Integration | Ultra-high vacuum (UHV) integrated chamber system |
| Automation | Robotic wafer transfer for unattended operation |
| Application Scope | Research-grade III–V, II–VI, and elemental semiconductor epitaxy |
| Compliance Framework | Designed for GLP-compliant process documentation and ASTM F1529-22 compatible thin-film metrology workflows |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Phoenix G2 ALD System |
| Substrate Capacity | Up to 370 mm × 470 mm (Gen 2.5 Panels) |
| 100 mm wafers | 240–360 pcs/batch |
| 150 mm wafers | 80–160 pcs/batch |
| 200 mm wafers | 80–100 pcs/batch |
| 300 mm wafers | up to 40 pcs/batch |
| Process Temperature Range | Up to 285 °C |
| Precursor Lines | Standard 4-channel MFC-controlled delivery |
| Dimensions (W × H × D) | 900 mm × 1370 mm × 1700 mm |
| Uniformity | <1.5% (Al₂O₃ on single wafer), <1.0% (Al₂O₃ across full batch) |
| Power Requirement | 208 VAC, 3-phase, 8500 W (including vacuum pump) |
| Gas Control | N₂ or Ar carrier/purge with mass flow controllers (MFCs) |
| Optional In-situ Tools | Ozone generator, LVPD (low-voltage plasma source), integrated glovebox, semi-automated load/unload, SECS/GEM interface |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | Savannah G2 ALD |
| Substrate Size | S100: up to 100 mm |
| S200 | up to 200 mm |
| S300 | up to 300 mm |
| Process Temperature | S100: RT–400 °C |
| S200/S300 | RT–350 °C |
| Precursor Ports | configurable up to 6 |
| Dimensions (W × H × D) | S100/S200: 585 × 560 × 980 mm |
| S300 | 686 × 560 × 980 mm |
| Uniformity (Al₂O₃) | <1% (1σ) |
| Cycle Time | <2 s per cycle (Al₂O₃ at 200 °C) |
| Power Supply | 115/220 VAC, 1900 W (S100/S200), 2000 W (S300) |
| Precursor Vessels | 50 mL heated stainless-steel ampoules (heatable to 200 °C) |
| Carrier/Exhaust Gas | N₂, 100 SCCM |
| Valve Response Time | 10 ms |
| Compatible Precursor States | solid, liquid, or gaseous |
| In-situ Options | QCM, spectroscopic ellipsometry, RGA, LVPD, ozone generator, SAMs module, plasma enhancement, glovebox integration |
| Brand | VSParticle |
|---|---|
| Origin | Netherlands |
| Model | VSP-P1 |
| Target Materials | Conductive metals and alloys |
| Substrate Size | 10 mm (monodisperse deposition), 47 mm (filter-based deposition) |
| Substrate Temperature | Ambient (~25 °C) |
| Film Thickness Uniformity | 0–20 nm (monodisperse nanoparticle deposition) |
| Base Pressure | 0.8–1.2 bar (note: this is *absolute pressure*, not vacuum level |
| Brand | Zhonghuan Furnace |
|---|---|
| Origin | Tianjin, China |
| Model | 1200°C Sliding-Stage CVD System |
| Heating Zone | Single or Multi-Zone Optional |
| Max Operating Temperature | 1200°C |
| Sliding Mechanism | Manual or Motorized with Position Limit Switches |
| Cooling Method | Integrated Forced-Air Quenching System |
| Gas Control | Multi-Channel Mass Flow Controller (MFC) System |
| Vacuum Capability | Medium-Vacuum (10⁻¹–10⁻³ Pa) or High-Vacuum (≤5×10⁻⁵ Pa) Configurable |
| Temperature Control Algorithm | Fuzzy PID Programmable Logic Controller |
| Vacuum Interface | Custom Quick-Connect Flange Assembly |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments |
| Brand | Zhonghuan Furnace |
|---|---|
| Origin | Tianjin, China |
| Model | CVD-12II-3Z/G |
| Max Temperature | 1200°C |
| Heating Zone | Dual-zone |
| Tube Diameter | Φ50/Φ60/Φ80 mm or Φ80/Φ100 mm |
| Heating Length | 420 mm / 600 mm |
| Uniform Zone Length | 280 mm / 390 mm |
| Rated Power | 3.2 kW / 4.8 kW |
| Voltage | 220 V AC |
| Temp Control | 50-segment programmable PID controller, ±1°C accuracy |
| Gas Channels | 3 (expandable) |
| Mass Flow Range | 0–500 sccm (N₂-calibrated, ±1% F.S.) |
| Response Time | ≤4 s |
| Inlet Pressure | 0.05–0.3 MPa (gauge) |
| Vacuum System | High-vacuum option with turbomolecular pump (1200 L/s or 1600 L/s, base pressure ≤5×10⁻⁶ Pa) |
| Connection | KF-flanged stainless steel bellows, manual high-vacuum gate valve, digital vacuum gauge |
| Overall Dimensions (w/o HV) | 530 × 1440 × 750 mm |
| Weight | 330 kg |