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| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Thermal ALD |
| Substrate Size | Customizable, up to 300 mm wafer |
| Process Temperature | Up to 400 °C (substrate heater) |
| Uniformity | ±1% |
| Precursor Channels | Up to 6, each independently heated to 200 °C |
| Pulse Valve Response Time | 10 ms |
| Chamber Material | Aluminum or stainless steel |
| Cooling | Integrated water-cooling system |
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