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| Brand | NS (Japan) |
|---|---|
| Origin | Japan |
| Model | 20-M/NS-12 |
| Etching Principle | Kaufman-Type Ion Beam Etching (Physical Sputtering) |
| Substrate Capacity | 12 × 4-inch wafers OR 3 × 18-inch substrates |
| Ion Source | 20 cm Diameter Kaufman Ion Source (KRI Original, WELL-5100 Power Supply Standard) |
| Sample Stage | Direct Liquid-Cooled Electrode with Planetary Rotation (Rotation + Revolution) |
| Beam Tilt Adjustment | Motorized ±15° Continuous Adjustment |
| Cooling Method | Integrated Direct Chilled Stage (Temperature Control Enabled During Etch) |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | NS-12 |
| Etching Principle | Broad-Beam Ion Beam Etching (IBE) |
| Substrate Capacity | 12 × Ø4″ wafers or 3 × Ø18″ wafers |
| Cooling | Direct substrate cooling via chilled chuck |
| Ion Source | 20 cm Kaufman-type ion source (original equipment from Kimball Physics / formerly Kaufman & Robinson) |
| Beam Steering | Adjustable incidence angle (0°–75°) |
| Rotation Mechanism | Independent planetary rotation (substrate rotation + revolution) |
| Residue-Free Processing | Yes |
| Power Supply Compatibility | Dual-voltage input (100 V / 200 V AC, 50/60 Hz) |
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