- All
- Favorite
- Popular
- Most rated
| Brand | AYAO Instruments |
|---|---|
| Origin | South Korea |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | LithoMaskless |
| Exposure Mode | Projection-Based |
| Resolution | 0.5 µm |
| Light Source | UV LED |
| Wavelength Options | 365 nm / 385 nm / 405 nm |
| Maximum Exposure Area | 100 mm × 100 mm |
| DMD Chip Size | 0.65-inch |
| Compatibility | Broad photoresist & substrate support (Si, SiO₂, glass, quartz, flexible polymers) |
| Alignment Method | Integrated high-magnification optical alignment with real-time feedback |
| Brand | Aiyao Instruments |
|---|---|
| Origin | Taiwan |
| Model | XW-A300 |
| Measurement Principles | Spectral Interferometry (IR), White-Light Interferometry (WLI), Optical Reflectometry |
| Sample Compatibility | 4″–12″ wafers |
| Probe Configuration | Single or Dual (top/bottom) |
| Compliance | SEMI S2/S8 |
| Motion Platform | Air-bearing vibration-isolated stage |
| Software | WaferSpect™ with full mapping, statistical analysis, and GLP-compliant audit trail |
| Brand | AiYao Instruments |
|---|---|
| Origin | Malaysia |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | IRIS S |
| Pricing | Available Upon Request |
| Brand | Onto Innovation |
|---|---|
| Model | Dragonfly® G3 |
| Origin | Malaysia |
| Equipment Type | Inline AOI for Front-End & Advanced Packaging |
| Minimum Detectable Line Width/Spacing | 0.7 µm |
| Wafer Size Support | 100 mm – 330 mm |
| Maximum Substrate Area | >6400 mm² |
| 翘曲晶圆 & Taiko Handling | Supported |
| Imaging Modes | Brightfield, Darkfield, Oblique Illumination, IR Transmission |
| 3D Metrology | Truebump® (Multi-Modal 3D Profilometry) |
| Residue Detection | Clearfind® |
| Software Platform | nLINE™ with Real-Time Analysis, Offline Review, and Exploratory Bump-Level Data Analytics |
| Compliance Framework | Supports ASTM F2598 (Wafer Defect Classification), ISO 14644-1 (Cleanroom Integration), and GLP/GMP-aligned Audit Trail Logging |
| Brand | Endress+Hauser Metrology |
|---|---|
| Origin | Germany |
| Model | MX608 |
| Wafer Diameter Support | 150 mm, 200 mm, 300 mm |
| Thickness Range | 500–800 µm |
| Max Warp | 100 µm |
| Resistivity Range | 0.001–200 Ω·cm |
| Thickness Accuracy | ±0.3 µm |
| TTV Accuracy | ±0.1 µm |
| Thickness Repeatability | ±0.05 µm |
| Resistivity Accuracy | ±1% (0.001–80 Ω·cm), ±5% (200 Ω·cm) |
| Resistivity Repeatability | ±0.2% (0.001–80 Ω·cm), ±2% (200 Ω·cm) |
| Edge Measurement Capability | up to 130 mm (150 mm wafers), up to 180 mm (200 mm wafers) |
| Single-Point Measurement Time | ~7 s |
| Full-Surface Scan (130/180 points) | ~10 s |
| Multi-Angle Radial Scan (18 scans @ 10° intervals) | ~3 min |
| Carrier Type Detection | P/N identification via Surface Photovoltage (SPV) |
| Brand | CTS |
|---|---|
| Origin | South Korea |
| Model | AP200 |
| Wafer Size Compatibility | 4", 6", 8" |
| Platen Count | 1 |
| Platen Speed | 0–200 rpm |
| Polishing Head Speed | 0–200 rpm |
| Polishing Head Oscillation Range | ±15 mm |
| Pressure Control Zones | 3 (Center, Edge, Retaining Ring) |
| Pressure Range | 0.14–14 psi |
| Platen Diameter | 20 in |
| Slurry Flow Rate | 20–500 cc/min (via dual peristaltic pumps) |
| Conditioning Head | 10-zone segmented actuation |
| Conditioning Sweep Speed | 10 sweeps/min |
| Conditioning Downforce | 3–20 lbs |
| Conditioning Speed | 0–150 rpm |
| Within-Wafer Non-Uniformity (WIWNU, 5-mm edge exclusion) | <5% (1σ) |
| Wafer-to-Wafer Non-Uniformity (WTWNU, 5-mm edge exclusion) | <3% (1σ) |
| Dimensions (W×L×H) | 1000 × 2030 × 2100 mm |
| Brand | Park SYSTEMS |
|---|---|
| Origin | South Korea |
| Model | NX-Hybrid WLI |
| Wafer Compatibility | 300 mm (fully backward-compatible with 200 mm and smaller wafers) |
| Instrument Category | Optical Defect Inspection & Hybrid Metrology System |
| Primary Application | In-line semiconductor process monitoring and defect characterization |
| Core Technology Integration | Co-registered AFM + WLI on single platform |
| Measurement Capability | Sub-ångström vertical resolution (AFM), nanometer-level lateral resolution, µm-to-mm field-of-view (WLI) |
| Brand | LynceeTec |
|---|---|
| Origin | Switzerland |
| Model | DHM R1000 MEMS |
| Measurement Principle | Digital Holographic Interferometry (DHI) |
| Operating Mode | Non-contact, Full-field, Single-shot 4D Imaging (3D topography + time) |
| Vertical Resolution | ≤5 pm |
| In-plane Displacement Resolution | ≤1 nm (sub-pixel algorithm) |
| Maximum Excitation Frequency | 25 MHz |
| Frame Rate | Up to 1.25 MHz (with burst mode) |
| Software | MEMSAnalysis Tool v5.x |
| Compliance | ASTM E2558, ISO/IEC 17025-compatible workflows, FDA 21 CFR Part 11 audit trail support (optional), GLP/GMP-ready metadata logging |
| Brand | G&N |
|---|---|
| Origin | Germany |
| Model | MPS R400CV |
| Wafer Compatibility | 2″, 3″, 4″, 5″, 6″, 8″ |
| Chuck Flatness Error | ≤2 µm |
| Grinding Method | Z-axis plunge grinding with synchronized wafer and spindle rotation |
| Spindle Type | Integrated high-precision air-bearing spindle |
| Spindle Speed | 2560 rpm |
| Spindle Power | 3.7 kW |
| Grinding Wheel Diameter | 200 mm |
| Number of Spindles | 1 |
| Coarse/Fine Feed Range | 170 mm |
| Feed Resolution | ≤1 µm |
| Minimum Step Size | 0.1 µm |
| Coarse Grinding Rate | 2–1000 µm/min |
| Fine Grinding Rate | 2–1000 µm/min |
| Surface Roughness (Ra) | Down to 0.016 µm (with D7 diamond wheel) |
| Total Thickness Variation (TTV) | ≤3 µm per wafer |
| Inter-wafer Thickness Uniformity | ≤2 µm |
| Wheel Material | Diamond or CBN |
| Wheel Mounting | Single or dual-wheel configuration (manual or optional automatic change) |
| Chuck Sizes | Multiple vacuum chucks for 2″–8″ wafers |
| Sample Table Diameter | 400 mm |
| Sample Table Speed | 2–20 rpm |
| Control System | High-precision PLC-based controller with touchscreen HMI |
| Recipe Storage | Multiple programmable process recipes |
| Optional Module | In-situ thickness measurement unit |
| Enclosure | Fully enclosed grinding chamber |
| Machine Weight | 1130 kg |
| Footprint | 1640 × 1210 mm |
| Brand | Fastmicro |
|---|---|
| Origin | Netherlands |
| Model | FM-PS-PFS-V01 |
| Minimum Detectable Particle Size | 0.5 µm |
| Measurement Speed | Real-time, second-level continuous monitoring |
| Output Formats | KLARF, Excel |
| Interface | USB, Ethernet |
| Sample Stage Diameter | 50 mm (base), compatible with 25 mm wafers |
| Environmental Operation | Ambient air and vacuum-compatible |
| Dimensions (L×W×H) | 405 mm × 183 mm × 209 mm |
| Detection Principle | Mie scattering-based surface particle imaging |
| Brand | Park SYSTEMS |
|---|---|
| Origin | South Korea |
| Model | NX-Mask |
| Application | EUV photomask defect repair, AFM-based nanomechanical removal and verification |
| Compliance | Designed for ISO 14644-1 Class 1–5 cleanroom integration |
| Software | XEI™ with automated defect-to-repair workflow, audit-trail logging per FDA 21 CFR Part 11 requirements |
| Repair Mechanism | Non-contact, voltage-controlled AFM tip nanoscrubbing and localized mechanical lift-off |
| Resolution | Sub-5 nm lateral resolution in topography and phase imaging |
| Sample Handling | Dual-pod EUV reticle cassette compatibility (SEMI F47 compliant) |
| Vacuum Requirement | None |
| Charging Risk | Electrostatically neutral operation |
| Chemical Usage | Dry, solvent-free process |
Show next