Optical Instrument Components
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| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S4111-35Q |
| Element Size (per column) | 4.4 × 0.9 mm |
| Number of Elements | 35 |
| Package | Ceramic 40-pin DIP |
| Cooling Method | Non-cooled |
| Maximum Reverse Voltage | 15 V |
| Spectral Response Range | 190–1100 nm |
| Peak Responsivity Wavelength (typ.) | 960 nm |
| Responsivity (typ.) | 0.58 A/W at 960 nm |
| Dark Current (max.) | 10 pA per element at VR = 10 mV |
| Rise Time (typ.) | 1.2 μs at VR = 0 V |
| Junction Capacitance (typ.) | 550 pF at VR = 0 V |
| Operating Temperature | Typical Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4282-51 |
| Component Category | Optical Component |
| Package | Plastic, Transparent |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4404 |
| Component Category | Optical Component |
| Package | Plastic with Integrated Lens |
| Photocurrent (Typ., 5 V CE, 1 mW/cm² @ 870 nm) | 2.5 mA |
| Dark Current (Max., 5 V CE) | 100 nA |
| Collector–Emitter Voltage (Max.) | 0.4 V |
| Peak Spectral Response Wavelength | 870 nm |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4506 |
| Component Category | Optical Element |
| Output Type | Quadrature 2-phase (A/B), 90° phase shift |
| Package | Plastic DIP |
| Operating Temperature | −30 to +80 °C |
| Storage Temperature | −40 to +85 °C |
| Supply Voltage | 5 V (Vcc) |
| Logic Compatibility | TTL-level output |
| Photodetector Array | Integrated 4-element silicon photodiode array |
| Electrical Interface | Direct TTL connection without external amplification |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4810 |
| Component Category | Optical Component |
| Package | Plastic with Integrated Lens |
| Spectral Rejection | Visible-Light Shielded |
| Operating Voltage | Low-Voltage (Typ. 3.3–5 V DC) |
| Output Configuration | Open-Collector |
| Logic Polarity | High-Level Output on Illumination |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6428-01 / S6429-01 / S6430-01 |
| Component Category | Optical Sensor Element |
| Spectral Peak Wavelengths | 460 nm (blue), 540 nm (green), 660 nm (red) |
| Active Area | 2.8 × 2.4 mm² |
| Spectral Response Ranges | 400–540 nm (S6428-01), 480–600 nm (S6429-01), 590–720 nm (S6430-01) |
| Package | Molded Plastic Housing |
| Detector Material | Silicon Photodiode |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6841 |
| Component Category | Optical Component |
| Package | Surface-Mount Plastic (4.5 × 5.5 mm) |
| Output Type | Digital |
| Supply Voltage | 4.5–5.5 V |
| Spectral Response Range | 380–1120 nm |
| Threshold Illuminance | 0.05 µW/mm² |
| Maximum Permissible Ambient Illuminance | 5000 lx |
| Key Feature | High Sensitivity |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S8550-02 |
| Component Category | Optical Component |
| Type | Short-Wavelength Silicon Avalanche Photodiode Array (4 × 8 pixels) |
| Active Area per Pixel | 1.6 × 1.6 mm |
| Package | Ceramic |
| Peak Wavelength (Typ.) | 600 nm |
| Spectral Response Range (Min.) | 320–1000 nm |
| Dark Current (Max.) | 10 nA |
| Cutoff Frequency (Typ.) | 250 MHz |
| Junction Capacitance (Typ.) | 9 pF |
| Breakdown Voltage (Typ.) | 400 V |
| Temperature Coefficient of Breakdown Voltage (Typ.) | 0.78 V/°C |
| Gain (Typ.) | 50 |
| Operating Temperature | −40 to +85 °C |
| Test Condition | Ta = 25 °C, unless otherwise specified |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S9 |
| Component Category | Optical Sensor ICs |
| Spectral Response Range | 300–820 nm (standard photopic), up to 1000 nm (IR-enhanced variants) |
| Peak Wavelength | 560 nm (standard), 550–650 nm (model-dependent) |
| Output Type | Analog current (0.11–1.8 mA), digital CMOS (S9705) |
| Operating Temperature | –40 °C to +100 °C (S11153-01MT) |
| Human Eye Spectral Match | CIE 1931 Photopic Luminosity Function compliant |
| IR Immunity | Enhanced rejection of 850–950 nm remote-control interference |
| Color-Temperature Stability | < ±3% output variation across 2700 K–6500 K white-light sources |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | S9684, S9703-10/11, S10317-01, S11257-01DT/02DT, S11282-01DS |
| Component Category | Optical Sensor ICs |
| Package Type | Surface-Mount Device (SMD) |
| Pixel Count | 1 or 2 active photodiode elements |
| Operating Mode | Low-Voltage Operation (≤3.3 V) or Standard Operation (5 V) |
| Transimpedance Gain Options | 6× or 20× current amplification |
| Laser Power Compatibility | Optimized for low-power visible-to-NIR laser beams (e.g., 635–780 nm) |
| Compliance | RoHS-compliant, AEC-Q200 qualified variants available upon request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S910 |
| Component Category | Optical Component |
| Package Type | Plastic Molded Housing |
| Photodiode Configuration | Triple-channel (R, G, B) Silicon Photodiodes |
| Spectral Response (Typ.) | Blue Channel: 400–540 nm |
| Green Channel | 480–600 nm |
| Red Channel | 590–720 nm |
| Active Area | 1.0 × 1.0 mm² |
| Interface | Analog Output (Voltage or Current Proportional to Illuminance per Channel) |
| Operating Temperature | −10 °C to +60 °C |
| Storage Temperature | −40 °C to +85 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S |
| Component Category | Optical Component |
| Spectral Range | 200–1150 nm |
| Active Area Options | Ø0.2 to Ø10 mm |
| Package Types | Metal, Ceramic, Plastic |
| Typical Gain | 50–200 (bias-dependent) |
| Rise Time | <0.5 ns to ~15 ns (model-dependent) |
| Breakdown Voltage | 120–400 V |
| Capacitance | As low as 0.12 pF (S8664-02K) |
| Bandwidth | Up to 700 MHz (S8664-02K) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12742-220 |
| Component Type | UV-Specific Photodetector |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 216–224 nm (FWHM ≈ 10 nm) |
| Peak Wavelength (typ.) | 220 nm |
| Responsivity (typ.) | 0.006 A/W @ 220 nm |
| Dark Current (max.) | 25 pA @ VR = 10 mV |
| Reverse Voltage (max.) | 5 V |
| Rise Time (typ.) | 1 µs |
| Junction Capacitance (typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Package | Hermetically Sealed Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | Typical at Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S12742-254 |
| Component Category | Optical Element |
| Spectral Bandwidth (FWHM) | 10 nm |
| Peak Wavelength (Typ.) | 254 nm |
| Active Area | 3.6 × 3.6 mm² |
| Cooling Method | Non-cooled |
| Package Type | Metal |
| Max Reverse Voltage | 5 V |
| Spectral Response Range | 252–256 nm |
| Photosensitivity (Typ.) | 0.018 A/W @ 254 nm |
| Max Dark Current | 25 pA @ VR = 10 mV |
| Rise Time (Typ.) | 1 μs |
| Junction Capacitance (Typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12742-275 |
| Component Type | UV-Optimized Photodetector |
| Spectral Range | 271–279 nm (Peak at 275 nm) |
| Active Area | 3.6 × 3.6 mm² |
| Photosensitivity (Typ.) | 0.01 A/W @ 275 nm |
| Dark Current (Max.) | 25 pA @ VR = 10 mV |
| Reverse Voltage (Max.) | 5 V |
| Rise Time (Typ.) | 1 µs |
| Junction Capacitance (Typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Package | Hermetically Sealed Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | Typical Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1336-44BK |
| Component Type | Silicon Photodiode |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 320–1100 nm |
| Peak Responsivity Wavelength (Typ.) | 960 nm |
| Responsivity (Typ. at 960 nm) | 0.5 A/W |
| Dark Current (Max. at VR = 10 mV) | 50 pA |
| Junction Capacitance (Typ. at VR = 0 V, f = 10 kHz) | 150 pF |
| Rise Time (Typ. at VR = 0 V) | 0.5 μs |
| Maximum Reverse Voltage | 5 V |
| Package | TO-5 Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | S1336-44BQ |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 190–1100 nm |
| Peak Responsivity Wavelength (Typ.) | 960 nm |
| Responsivity (Typ. at 960 nm) | 0.5 A/W |
| Dark Current (Max. at VR = 10 mV) | 50 pA |
| Junction Capacitance (Typ. at VR = 0 V, f = 10 kHz) | 150 pF |
| Rise Time (Typ. at VR = 0 V) | 0.5 µs |
| Reverse Voltage (Max.) | 5 V |
| Package | TO-5 Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1337-33BQ |
| Component Type | Silicon Photodiode |
| Spectral Range | 190–1100 nm |
| Active Area | 2.4 × 2.4 mm² |
| Peak Wavelength (Typ.) | 960 nm |
| Responsivity (Typ.) | 0.5 A/W @ 960 nm |
| Quantum Efficiency | 75 % @ 200 nm |
| Dark Current (Max.) | 30 pA @ VR = 10 mV |
| Junction Capacitance (Typ.) | 65 pF @ VR = 0 V, f = 10 kHz |
| Rise Time (Typ.) | 0.2 µs @ VR = 0 V |
| Reverse Voltage (Max.) | 5 V |
| Package | Ceramic |
| Cooling | Non-cooled |
| Operating Temperature | Ta = 25 °C (unless specified) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | H13126_C12918 |
| Component Type | Optical Sensor Module |
| Output Interfaces | Digital (photon counting) + Analog (voltage) |
| Connectivity | USB 2.0 |
| Compliance | CE-marked (C12918-A1/A2/A3 variants for JP/US/EU markets) |
| Operating Temperature | 0 to +40 °C |
| Storage Temperature | −20 to +60 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | X10 |
| Component Category | Optical Element |
| Active Area | 16 × 12 mm |
| Wavelength Ranges | 400–700 nm, 410±10 nm, 510±50 nm, 620–1100 nm, 650±50 nm, 800±50 nm, 1000–1550 nm, 1050±50 nm |
| Diffraction Efficiency | 79–95% |
| Drive Interface | DVI from PC via CMOS backplane |
| Brand | Hanuo |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | HANUO-I |
| Price | USD 4,450 (approx.) |
| Component Category | Light Source System |
| Lamp Power Control Range | Hg lamp 100–1000 W, Xe lamp 100–1000 W, Metal Halide lamp 100–450 W |
| Reactor Volumes | 250 mL, 500 mL, 1000 mL (customizable) |
| Integrated Lamp Controller | Yes |
| Quartz Cold Finger | Included |
| Dark Chamber | Included |
| Magnetic Stirrer | Included |
| Mobile Cart | Included |
| Brand | Hanuo |
|---|---|
| Model | HANUO-I |
| Type | Benchtop Photochemical Reaction System |
| Light Source Compatibility | Mercury Lamp (100–1000 W), Xenon Lamp (100–1000 W), Metal Halide Lamp (100–450 W) |
| Reaction Vessel Options | 250 mL, 500 mL, 1000 mL (borosilicate glass or optional quartz) |
| Integrated Light Controller | Yes |
| Cooling | Quartz Cold Finger (water-cooled) |
| Stirring | Motorized magnetic stirrer with speed control |
| Enclosure | Light-tight reaction chamber (dark box) |
| Power Regulation | Continuous analog dimming for all lamp types |
| Compliance | Designed for laboratory-scale photochemistry under ISO/IEC 17025-aligned experimental conditions |
| Brand | Hanuo |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | HANUO-IV |
| Light Source Module | High-Intensity Tunable Arc Lamp System |
| Lamp Power Range | Hg Lamp 100–1000 W, Xe Lamp 100–1000 W, Metal Halide Lamp 100–450 W |
| Sample Capacity | 8 Parallel Reaction Vessels |
| Stirring | Synchronized 8-Channel Magnetic Stirring |
| Quartz Reactor Vessels | 30 mL and 50 mL (standard), custom volumes available |
| Cooling | Integrated Quartz Cold Finger with Circulating Chiller Interface |
| Compliance | Designed for ISO/IEC 17025-aligned laboratory environments, compatible with GLP documentation workflows |
| Brand | HANUO |
|---|---|
| Model | HANUO-V |
| Light Source Type | Xenon Lamp (also compatible with Mercury & Metal Halide Lamps) |
| Max. Power Output | 1000 W (Xenon/Mercury), 450 W (Metal Halide) |
| Adjustable Power Range | 100–1000 W (Xenon/Mercury), 100–450 W (Metal Halide) |
| Sample Capacity | 8 parallel reaction vessels |
| Vessel Volume Options | 30 mL, 50 mL (customizable) |
| Stirring | 8-channel synchronized magnetic stirring |
| Cooling System | Recirculating chiller with >1000 W cooling capacity, casters & bottom drain valve |
| Origin | Shanghai, China |
| Compliance | Designed for laboratory-scale photochemical research under ISO/IEC 17025-aligned experimental conditions |
| Key | Brand: ZOLIX |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Product Category | Optical Component |
| Model | RCCB Series |
| Wavelength Range | UV to NIR (190–1100 nm) |
| Reflective Coating | Unprotected Aluminum |
| Single-Surface Reflectivity | 85% ± 5% |
| Triple-Pass Return Efficiency | ~61% ± 3% |
| Angular Tolerance | < 2 arcsec (typical alignment precision) |
| Construction | Monolithic air-spaced trihedral assembly |
| Surface Finish | λ/10 rms (per mirror face) |
| Clear Aperture | ≥ 90% of nominal diameter |
| Mounting | Kinematic or kinematic-compatible base optional |
| Brand | Holoeye |
|---|---|
| Origin | Germany |
| Model | ERIS |
| Pixel Resolution | 1920 × 1200 |
| Pixel Pitch | 8 µm |
| Wavelength Range | 400–1600 nm |
| Phase Depth | 0–2π (adjustable) |
| Phase Quantization | 8-bit standard, up to 10-bit supported |
| Interface | HDMI (phase pattern input), USB (driver control & gamma/dynamic range calibration) |
| Trigger Output | TTL-sync enabled |
| Display Technology | 0.717″ LCOS microdisplay |
| Operating Mode | Plug-and-play, extended desktop mode compatible |
| Brand | Holoeye |
|---|---|
| Origin | Germany |
| Model | GAEA-2 |
| Pixel Resolution | 4094 × 2464 |
| Pixel Pitch | 3.74 µm |
| Operating Wavelength Ranges | Visible (e.g., 532 nm), Near-Infrared (e.g., 1064 nm), Telecom C-band (1550 nm) |
| Diffraction Efficiency | up to 79% (visible), up to 75% (C-band) |
| Component Type | Liquid-Crystal-on-Silicon (LCoS) Optical Element |
| Brand | Holoeye |
|---|---|
| Origin | Germany |
| Model | LC 2012 |
| Display Resolution | 1024 × 768 pixels |
| Operating Wavelength Range | 450–800 nm |
| Maximum Phase Modulation | 2π @ 450 nm, 1.8π @ 532 nm, π @ 800 nm |
| Amplitude Modulation Capability | Yes |
| Contrast Ratio | 1000:1 @ 633 nm |
| Interface | HDMI (video input), USB (configuration & parameter control) |
| Form Factor | Integrated LCoS module with embedded driver electronics |
| Mounting | Standard optical cage system compatible (e.g., 30 mm or 60 mm rail mounts) |
| Brand | HOLOEYE |
|---|---|
| Origin | Germany |
| Model | LUNA+DPE+RGB |
| Liquid Crystal Type | Reflective Silicon-Based Liquid Crystal on Silicon (LCoS) |
| Resolution | 1920 × 1080 pixels |
| Pixel Pitch | 4.5 µm |
| Fill Factor | >91% |
| Maximum Spatial Resolution | 111 lp/mm |
| Addressing Depth | 8-bit |
| Signal Interface | DisplayPort (DP) |
| Input Frame Rate | 60 Hz |
| Active LC Area | 8.64 × 4.86 mm |
| Driver Electronics Dimensions | 44 × 85 × 23.5 mm |
| Response Time | ~20 ms |
| System Architecture | Integrated Diffractive Projection Engine (DPE) + RGB Multi-Wavelength Laser Source |
| Compliance | CE-marked, RoHS-compliant, ISO 9001-manufactured components |
| Brand | Holoeye |
|---|---|
| Origin | Germany |
| Model | PLUTO-2.1-TELCO-142 |
| Resolution | 1920 × 1080 pixels |
| Pixel Pitch | 8 µm |
| Interface | HDMI/DisplayPort (Green Channel 8-bit addressing) |
| Driver Connection | USB 2.0 for Voltage Calibration and Gamma Adjustment |