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| Brand | Corial |
|---|---|
| Origin | France |
| Model | D250L |
| Heating Method | Hot-Wall |
| Deposition Rate | 520 nm/min |
| Process Gases | SiH₄, NH₃, N₂ |
| Deposited Films | SiO₂, Si₃N₄, SiOF, SiOCH, SiC |
| Base Vacuum | −300 to 50 mTorr |
| Operating Pressure | 0.2–2 Torr |
| Maximum Substrate Size | 200 mm (8-inch) wafers |
| Configuration | Load-Lock with Turbo-Molecular Pump (350 L/s) and Dry Scroll Pump (110 m³/h) |
| RF Power Supply | 300 W, 13.56 MHz |
| Integrated Controllers | TMP, Heater, HV/LV, Plasma Process Controller |
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