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| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Model | Takachi |
| Etch Principle | Inductively Coupled Plasma (ICP) |
| Etch Rate | SiO₂ ≥ 1500 Å/min |
| Selectivity | SiO₂ to Photoresist = 1.0–1.5:1 |
| Si₃N₄ to Photoresist = 1.0–1.2 | 1 |
| Uniformity | ≤ ±2% |
| Application Scope | Dielectrics (SiO₂, Si₃N₄, metal oxides), Polymers (photoresists, polyimides, BCB, SU-8), Semiconductors (Si, Ge, III–V compounds including GaAs, AlGaAs, GaN, InP), SiC |
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