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| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | Up to 200 mm (8-inch) wafers |
| Process Temperature | 300°C aluminum alloy hot-wall chamber with convective temperature control |
| Precursor Channels | 8 independent precursor lines with CF-40 vacuum flanges |
| Chamber Dimensions (W × H × D) | 78 × 56 × 28 cm |
| Thickness Uniformity | <1% across 200 mm substrate |
| Thermal Uniformity | 99.9% |
| Maximum Sample Thickness | 32 mm |
| Plasma Option | Integrated 13.56 MHz ICP plasma source (300 W, air-cooled) |
| Mass Flow Controllers | 4 MFCs (3 for plasma gases, 1 for carrier gas) |
| Compliance | CF-40 standard vacuum interface, glovebox-compatible side-mount configuration |
| [Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | APD |
| Vacuum Chamber Dimensions | 400 × 400 × 300 mm (L×W×H) |
| Pumping System | 450 L/s Turbomolecular Pump |
| Plasma Source | Up to 3 Configurable Arc Cathodes |
| Operating Pressure Range | High Vacuum to Low-Pressure Reactive Gases (N₂, O₂, H₂, Ar) |
| Target Geometry | Cylindrical or Tubular, Ø10 mm × 17 mm |
| Target Resistivity | < 0.01 Ω·cm |
| Energy Storage Capacitance | 360 µF × 5 (Optional Expansion) |
| Pulse Frequency | 1–5 Hz |
| Discharge Voltage | 70–400 V (Max 150 V at 1800 µF) |
| Human-Machine Interface | Integrated Touchscreen Control Panel |
| Powder Collection Module (APD-P) | Ø95 mm × 30 mm Vessel, 1–50 rpm Rotation, Yield: 13–20 cm³/h (Density- and Size-Dependent) |
| Thin-Film Configuration (APD-S) | Uniform Deposition on 2-inch Substrates] |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | CAS-AYII |
| Instrument Type | Non-Vacuum Rapid Thermal Annealing System |
| Sample Dimensions | 70 mm (W) × 220 mm (L) × 0.5–2.0 mm (T) |
| Temperature Range | 50 °C to 1000 °C (max. 1150 °C) |
| Max. Heating Rate | 30 °C/s |
| Max. Cooling Rate | −70 °C/s (from 1000 °C to 400 °C) |
| Annealing Temperature Accuracy | High |
| Annealing Temperature Uniformity | High |
| Brand | Advance Riko |
|---|---|
| Origin | Japan |
| Model | HT-RTA59HD |
| Instrument Type | Non-vacuum Rapid Thermal Annealer |
| Sample Dimensions | 15 mm × 15 mm × 1 mm |
| Temperature Range | Ambient to 1800 °C |
| Maximum Heating Rate | 1800 °C in ≤10 s (for 15 mm × 15 mm sample) |
| Cooling Rate | 180 °C/s |
| Temperature Accuracy | High |
| Temperature Uniformity | High |
| Heating Method | High-intensity infrared lamp array with optimized reflective cavity |
| Sample Holder Material | Alumina or high-purity graphite |
| Thermocouple Compatibility | JIS B standard φ0.3 mm (W-Re optional) |
| Interface | USB-connected PC control and real-time temperature monitoring |
| Optional Quench Configuration | CAS-59AQ water-quench module |
| Brand | Techno Search Corp |
|---|---|
| Origin | Japan |
| Model | TCA4-6 |
| Maximum Operating Temperature | 2000–3000 °C |
| Chamber Vacuum Level | ≤1×10⁻⁶ Torr (≤1.3×10⁻⁴ Pa) |
| Atmosphere Control | High-purity Ar, pressure range 10⁻⁴ Pa to 1 atm |
| Crucible Rotation Speed | 1–10 rpm (manual) |
| Crystal Pulling Speed | 3–38 mm/hr |
| Pulling Stroke | 150 mm |
| Electrode Configuration | 4 arc-melting electrodes + 1 getter electrode |
| Sustained Arc Current | up to 75 A (adjustable) |
| Peak Arc Current | up to 150 A (short-term, adjustable) |
| Crucible Material | Water-cooled copper |
| Chamber Material | Stainless steel |
| Real-time Visual Monitoring | Integrated high-temperature CCD camera with viewport |
| Brand | SciDre |
|---|---|
| Origin | Germany |
| Model | HKZ |
| Maximum Melting Zone Temperature | Up to 3000 °C |
| Melting Zone Pressure Range | 10–300 bar (selectable) |
| Vacuum Level | 1×10⁻⁵ mbar |
| Atmosphere Options | Ar, O₂, N₂, air, or custom gas mixtures |
| Xenon Lamp Power Options | 3 kW, 5 kW, 6.5 kW |
| Sample Rod Diameter | 6.8 mm or 9.8 mm |
| Pulling Rate | 0.1–50 mm/h |
| Rotation Speed | 0–70 rpm |
| Brand | Spin-ION |
|---|---|
| Origin | France |
| Model | Helium-S® |
| Ion Species | He⁺ (also capable of H⁺ generation) |
| Implantation Energy Range | 1–30 keV |
| Energy Resolution | <50 eV |
| Beam Current Range | 1–50 μA (energy-dependent) |
| Typical Ion Flux | 1×10¹⁵ ions/cm²/min at 10 μA |
| Uniform Irradiation Area | 25 mm × 25 mm |
| Beam Uniformity | Intensity ±1%, Angular ±3° |
| Beam Purity | ≥99.99% (1:10⁴ contaminant ratio) |
| Vacuum Base Pressure | ≤1×10⁻⁷ mbar |
| Ion Source | Electron Cyclotron Resonance (ECR) |
| Beam Filtering | Wien Filter |
| Scanning | X-Y electrostatic deflection |
| Sample Holder | 25 mm diameter wafers/disks |
| Optional Accessories | In-situ heating stage (up to 500 °C), angular tilt module, load-lock rapid transfer chamber |
| Compliance | Designed for integration into UHV systems |
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