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| Brand | Moorfield |
|---|---|
| Origin | UK |
| Model | oPVD S10A, oPVD S10A-WA, oPVD T15A |
| Vacuum Base Pressure | <5×10⁻⁷ mbar |
| Substrate Size | up to 8 inches (S10A-WA), up to 4 inches (S10A & T15A) |
| Substrate Heating | up to 500 °C |
| Target Compatibility | 2-inch water-cooled magnetron sputtering targets (S10A/S10A-WA) |
| Gas Control | up to 3 MFC-controlled process gases (Ar, O₂, N₂) |
| Deposition Modes | DC/RF magnetron sputtering, reactive sputtering, co-sputtering, resistive/low-temperature organic evaporation |
| Film Uniformity | high across full substrate area |
| Cleanroom-Compatible Design | yes |
| Software | integrated touchscreen HMI with programmable recipes, audit-trail-capable control logic |
| Brand | iplas |
|---|---|
| Origin | Germany |
| Model | CYRANNUS® |
| Operating Pressure Range | 10 mbar to atmospheric pressure |
| Plasma Generation Method | External multi-electrode microwave excitation (2.45 GHz or 915 MHz) |
| Substrate Compatibility | Up to 300 mm diameter planar or curved substrates |
| Compatible Precursor Gases | CH₄/H₂/O₂/Ar/He/N₂ (inert and reactive) |
| Deposited Materials | Single-crystal diamond, polycrystalline diamond, nanocrystalline diamond, DLC, Al₂O₃, c-BN |
| Plasma Stability | High reproducibility under dynamic gas flow, pressure, and voltage fluctuations |
| Safety Compliance | Fully shielded microwave cavity |
| Brand | Moorfield |
|---|---|
| Origin | UK |
| Model | MiniLab |
| Vacuum Base Pressure | 5×10⁻⁷ mbar |
| Maximum Substrate Diameter | 11 inches |
| Deposition Techniques | Thermal Evaporation, Low-Temperature Organic Evaporation, Magnetron Sputtering, Electron Beam Evaporation |
| Chamber Configurations | Front-Loading Box, Top-Hinged Bell Jar, Glovebox-Compatible Dual-Door, Tall-Aspect-Ratio Vertical |
| Compliance | ISO 9001–Certified Manufacturing, GLP-Ready Architecture, FDA 21 CFR Part 11–Compatible Software Options Available |
| Brand | Moorefield |
|---|---|
| Origin | United Kingdom |
| Heating Method | Cold-Wall Design |
| Base Pressure | 5×10⁻⁷ mbar |
| Substrate Dimensions | 20 × 40 mm² |
| Maximum Temperature | 1100 °C |
| Growth Time | <30 min |
| Process Gases | Ar, H₂, CH₄ |
| Mass Flow Controllers (MFCs) | Integrated for Precise Gas Delivery |
| Plasma Option | Optional RF Source (150 W, 13.56 MHz) for oCVD-WPG Variant |
| Compliance | Compatible with ISO Class 5 Cleanroom Environments |
| Safety Features | Exhaust Dilution Module, Vacuum Interlock, Thermal Shutdown |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | Up to 200 mm (8-inch) wafers |
| Process Temperature | 300°C aluminum alloy hot-wall chamber with convective temperature control |
| Precursor Channels | 8 independent precursor lines with CF-40 vacuum flanges |
| Chamber Dimensions (W × H × D) | 78 × 56 × 28 cm |
| Thickness Uniformity | <1% across 200 mm substrate |
| Thermal Uniformity | 99.9% |
| Maximum Sample Thickness | 32 mm |
| Plasma Option | Integrated 13.56 MHz ICP plasma source (300 W, air-cooled) |
| Mass Flow Controllers | 4 MFCs (3 for plasma gases, 1 for carrier gas) |
| Compliance | CF-40 standard vacuum interface, glovebox-compatible side-mount configuration |
| [Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | APD |
| Vacuum Chamber Dimensions | 400 × 400 × 300 mm (L×W×H) |
| Pumping System | 450 L/s Turbomolecular Pump |
| Plasma Source | Up to 3 Configurable Arc Cathodes |
| Operating Pressure Range | High Vacuum to Low-Pressure Reactive Gases (N₂, O₂, H₂, Ar) |
| Target Geometry | Cylindrical or Tubular, Ø10 mm × 17 mm |
| Target Resistivity | < 0.01 Ω·cm |
| Energy Storage Capacitance | 360 µF × 5 (Optional Expansion) |
| Pulse Frequency | 1–5 Hz |
| Discharge Voltage | 70–400 V (Max 150 V at 1800 µF) |
| Human-Machine Interface | Integrated Touchscreen Control Panel |
| Powder Collection Module (APD-P) | Ø95 mm × 30 mm Vessel, 1–50 rpm Rotation, Yield: 13–20 cm³/h (Density- and Size-Dependent) |
| Thin-Film Configuration (APD-S) | Uniform Deposition on 2-inch Substrates] |
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