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| Brand | Cyberstar |
|---|---|
| Origin | France |
| Model | LHPG |
| Heating Source | High-Power Diode or CO₂ Lasers |
| Max Temperature | >2800 °C |
| Pulling Stroke | 140 mm |
| Pulling & Rotation Speeds | Precisely Adjustable |
| Atmosphere Control | High-Purity Ar, O₂, N₂, H₂, or Mixed Gases |
| Pressure Range | Up to 1.5 bar (abs) |
| Vacuum Level | ≤1×10⁻⁴ mbar |
| In Situ Monitoring | Real-Time CCD Imaging + Non-Contact Infrared Pyrometry |
| Crystal Geometry | Single-Crystal Fibers (Typical Ø 0.3–2.0 mm) |
| Crucible-Free Operation | Yes |
| Applicable Materials | Refractory Oxides (e.g., SrTiO₃), Nitrides, Carbides, and Other High-Melting-Point Compounds |
| Brand | Quantum Design |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | LFZ-2KW |
| Heating Method | Five-Beam Diode Laser Array |
| Maximum Laser Power | 2 kW |
| Melting Zone Temperature Range | 2600–3000 °C |
| Max. Crystal Diameter | 8 mm |
| Growth Rate | Up to 300 mm/hr |
| Rotation Speed | Up to 100 rpm |
| Chamber Pressure Rating | Up to 10 bar |
| Atmosphere Options | O₂, Ar, N₂, or custom gas mixtures |
| Real-Time Monitoring | Integrated HD visual feedback system |
| Control Interface | PC-based closed-loop temperature and motion control |
| Brand | Quantum Design |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Origin Category | Imported |
| Model | IR-Furnace |
| Crystal Growth Rate | 0.1–1.4 mm/h, 1–14 mm/h, or 10–140 mm/h (selectable via lamp power and feed rate calibration) |
| Maximum Crystal Diameter | 6 mm |
| Operating Temperature Range | Up to 2150 °C |
| Heating Source | Commercial-grade halogen lamps with gold-coated dual-curved mirrors |
| Cooling System | Integrated closed-loop air-cooling (no external water supply required) |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments |
| Brand | Techno Search Corp |
|---|---|
| Origin | Japan |
| Model | TCA4-6 |
| Maximum Operating Temperature | 2000–3000 °C |
| Chamber Vacuum Level | ≤1×10⁻⁶ Torr (≤1.3×10⁻⁴ Pa) |
| Atmosphere Control | High-purity Ar, pressure range 10⁻⁴ Pa to 1 atm |
| Crucible Rotation Speed | 1–10 rpm (manual) |
| Crystal Pulling Speed | 3–38 mm/hr |
| Pulling Stroke | 150 mm |
| Electrode Configuration | 4 arc-melting electrodes + 1 getter electrode |
| Sustained Arc Current | up to 75 A (adjustable) |
| Peak Arc Current | up to 150 A (short-term, adjustable) |
| Crucible Material | Water-cooled copper |
| Chamber Material | Stainless steel |
| Real-time Visual Monitoring | Integrated high-temperature CCD camera with viewport |
| Brand | SciDre |
|---|---|
| Origin | Germany |
| Model | HKZ |
| Maximum Melting Zone Temperature | Up to 3000 °C |
| Melting Zone Pressure Range | 10–300 bar (selectable) |
| Vacuum Level | 1×10⁻⁵ mbar |
| Atmosphere Options | Ar, O₂, N₂, air, or custom gas mixtures |
| Xenon Lamp Power Options | 3 kW, 5 kW, 6.5 kW |
| Sample Rod Diameter | 6.8 mm or 9.8 mm |
| Pulling Rate | 0.1–50 mm/h |
| Rotation Speed | 0–70 rpm |
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