Semiconductor Instruments
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| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 4PP-SCAN |
| Price Range | USD 13,500 – 68,000 (FOB Hamburg) |
| Automation Level | Semi-Automatic |
| Probe Tip Material | Tungsten Carbide |
| Tip Radius | 0.25 mm |
| Maximum Test Current | 30 mA |
| Mapping Grid | 10 × 10 points |
| Typical Map Duration | 4 min |
| Vacuum Chuck | Tempered Glass with Integrated Vacuum Port |
| Dimensions (L×W×H) | 36 × 48 × 24 cm |
| Weight | 16 kg |
| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Quantum Device Manufacturing |
| Implantation Energy | 50 keV |
| Wafer Size Compatibility | 8–12 inch |
| Implant Species | p⁺ (H⁺, B⁺, As⁺, P⁺, etc.) |
| Ion Source Options | Liquid Metal Ion Source (LMIS) & Plasma Ion Source |
| Beam Current Range | sub-fA to ~100 pA |
| Detection Efficiency | ≥98% |
| Positional Accuracy | <20 nm (3σ) |
| Stage Resolution | ≤1 nm (closed-loop) |
| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Implant Energy | 50 keV |
| Wafer Size | 8–12 inch |
| Implant Species | p⁺ (proton) |
| Ion Source Options | Liquid Metal Ion Source (LMIS), Plasma Ion Source |
| Beam Current | sub-femtoampere (fA) range |
| Positioning Accuracy | < 10 nm |
| Detection Efficiency | ≥ 98% |
| Compliance | ISO 14644-1 Class 4 cleanroom compatible, CE-marked, RoHS compliant |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q235 (Q-Series) |
| Type | Benchtop Microwave Plasma Asher/Stripper |
| Application Domain | Semiconductor Front-End-of-Line (FEOL) & MEMS Fabrication |
| Compliance | CE-marked, ISO 9001–certified manufacturing, compatible with cleanroom Class 100/ISO 5 environments |
| Brand | Qiyue Technology |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MINI-ALD4 |
| Substrate Size | Up to 100 mm (4-inch) wafers |
| Chamber Architecture | Dual-chamber (reaction + load-lock) |
| Heating System | Radiant heating with high temperature uniformity |
| Gas Delivery | Optimized laminar flow path with precursor bottle heating, heated transfer lines, and adjustable pulsing sequence |
| Optional Modules | Plasma source, powder ALD module, ozone generator |
| Film Compatibility | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), nitrides (e.g., TiN, TaN), pure metals (e.g., Pt, Ru), and doped compounds |
| Brand | 1124123/13213112 |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Quant Nuova |
| Pricing | Upon Request |
| Brand | Quantum Design |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Origin Category | Imported |
| Model | IR-Furnace |
| Crystal Growth Rate | 0.1–1.4 mm/h, 1–14 mm/h, or 10–140 mm/h (selectable via lamp power and feed rate calibration) |
| Maximum Crystal Diameter | 6 mm |
| Operating Temperature Range | Up to 2150 °C |
| Heating Source | Commercial-grade halogen lamps with gold-coated dual-curved mirrors |
| Cooling System | Integrated closed-loop air-cooling (no external water supply required) |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments |
| Brand | Quantum Design |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | LFZ-2KW |
| Heating Method | Five-Beam Diode Laser Array |
| Maximum Laser Power | 2 kW |
| Melting Zone Temperature Range | 2600–3000 °C |
| Max. Crystal Diameter | 8 mm |
| Growth Rate | Up to 300 mm/hr |
| Rotation Speed | Up to 100 rpm |
| Chamber Pressure Rating | Up to 10 bar |
| Atmosphere Options | O₂, Ar, N₂, or custom gas mixtures |
| Real-Time Monitoring | Integrated HD visual feedback system |
| Control Interface | PC-based closed-loop temperature and motion control |
| Origin | Denmark |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Uni A6 DT |
| Price Range | USD 68,000 – 109,000 |
| Brand | Raith / Simax |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | PicoMaster XF ATE-200 |
| Exposure Mode | Proximity Mode |
| Resolution | 600 nm |
| Light Source | GaN Laser Diode |
| Wavelength | 405 nm |
| Illumination Uniformity | ±5% |
| Maximum Exposure Area | 200 mm × 200 mm |
| Maximum Write Speed | 280 mm²/min |
| Minimum Feature Size | 600 nm |
| Brand | Raith |
|---|---|
| Origin | Germany |
| Model | Pioneer Two |
| Electron Source | Thermal Field Emission Gun |
| Accelerating Voltage Range | 20 V – 30 kV |
| Minimum Guaranteed Resolution (Line Width) | ≤8 nm |
| Stage Travel (X/Y/Z) | 50 mm × 50 mm × 25 mm |
| XY Positioning Accuracy | ±2 nm |
| Overlay/Pattern Stitching Accuracy | ≤50 nm |
| Imaging Magnification Range | 20× – 1,000,000× |
| Optional Add-ons | Backscattered Electron Detector (BSED), Energy-Dispersive X-ray Spectrometer (EDS), Tilt-Rotation Stage Module |
| Brand | Rayscience |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Semiconductor Instrument |
| Model | CDE ResMap |
| Automation Level | Fully Automated |
| Probe Tip Material | Tungsten Carbide |
| Typical Probe Load Force | 100–200 g |
| Compatible Wafer Sizes | 50 mm (2″) to 150 mm (6″) |
| Measurement Mode | Four-Point Collinear Probe (Van der Pauw geometry compatible) |
| Data Acquisition Rate | Up to 4,000 data points per measurement site |
| Interface | Windows-based GUI with recipe-driven operation |
| Calibration Interval | Extended (≥12 months under GLP-compliant usage) |
| Configurable Probe Heads | Dual–quadruple probe head options for 300 mm platform (not included in base model) |
| Brand | Rayscience |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | WCT-120 |
| Measurement Principle | QSSPC (Quasi-Steady-State Photoconductance) |
| Lifetime Range | 100 ns – 10 ms |
| Test Modes | QSSPC, Transient, Lifetime Normalization Analysis |
| Resistivity Range | 3–600 Ω/sq. (undoped) |
| Carrier Injection Range | 1×10¹³ – 1×10¹⁶ cm⁻³ |
| Sensor Diameter | 40 mm |
| Sample Diameter | 40–210 mm (customizable down to smaller sizes) |
| Silicon Thickness | 10–2000 µm |
| Ambient Temperature | 20–25 °C |
| Power Consumption | Tester: 40 W |
| Controller PC | 200 W |
| Light Source | 60 W |
| Input Voltage | 100–240 VAC, 50/60 Hz |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Models | D-180, D-125 |
| Pricing | Available Upon Request |
| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |
| Brand | Rikori |
|---|---|
| Model | LQ-5Z-TMAH |
| Origin | Japan |
| Application | Single-component aqueous alkaline/acidic solution concentration measurement (TMAH, NaOH, Na₂CO₃, NH₃·H₂O, H₂SO₄, HNO₃, HCl) |
| Measurement Principle | Conductivity-based electrochemical sensing with temperature-compensated calibration |
| Range (TMAH) | 0.00–5.00 % w/w or 0.0–50.0 g/L |
| Temperature Range | 0.00–40.00 °C |
| Sensor Type | Chemically resistant 4C-type electrode (1 m cable) |
| Enclosure Rating | IP66 |
| Power | 3× LR03 alkaline batteries (auto-shutdown enabled) |
| Dimensions (main unit) | 38 × 75 × 180 mm (H×W×D) |
| Weight | ~300 g (unit), ~50 g (electrode) |
| Brand | RKD |
|---|---|
| Origin | USA |
| Model | Elite Etch Cu Chemical Decapsulation System |
| Fluid Delivery Precision | Micro-dosed HNO₃ / H₂SO₄ / mixed acid |
| Maximum Acid Flow Rate | 8 mL/min |
| Acid Temperature Control Range | 10–250 °C |
| Minimum Wire Diameter Compatible | 0.8 mil (20.3 µm) Cu |
| Safety Features | Dual-sealed fluid interfaces, real-time leak detection, N₂ pressure interlock, fiber-optic lid sealing verification, cooled waste acid collection (<90 °C) |
| Control Interface | External handheld keypad |
| Compliance | Designed for ISO/IEC 17025 lab environments |
| Brand | RKD |
|---|---|
| Origin | USA |
| Model | RA-880 Laser Decapsulation System |
| Application | Semiconductor Plastic Encapsulant Removal |
| Compliance | Designed for ISO/IEC 17025-aligned failure analysis labs |
| Software Control | Windows-based real-time co-focal imaging & programmable laser scanning platform |
| Laser Type | Q-switched Nd:YAG (1064 nm) with variable pulse width and energy modulation |
| Focus Control | Auto-focus sensor with programmable depth-of-field (DOF) adjustment |
| Imaging | Integrated high-resolution coaxial CCD with 10×–50× optical zoom and real-time overlay of scan path |
| Pattern Definition | Vector-based graphical interface supporting DXF, JPEG, BMP import |
| Energy Management | Closed-loop pulse energy monitoring with ±2% stability |
| Reproducibility | <±3 µm positional repeatability across >1000 cycles |
| Maintenance | Solid-state laser source |
| Brand | ROOKO |
|---|---|
| Model | FT-361 |
| Origin | Zhejiang, China |
| Automation Level | Manual |
| Compliance | GB/T 1551–2018 (Silicon Single Crystal Resistivity Test Method), ASTM F84–20 |
| Sheet Resistance Range | 10⁻⁶–2×10² Ω/□ |
| Resistivity Range | 10⁻⁷–2×10³ Ω·cm |
| Test Current | 0.1 μA, 1 μA, 10 μA, 100 μA |
| Current Accuracy | ±0.1% of reading |
| Resistance Measurement Accuracy | ≤0.3% |
| Overall System Uncertainty | ≤4% (verified against NIST-traceable standard wafers) |
| Probe Spacing Options | 1 mm, 2 mm, 3 mm |
| Probe Tip Materials | Tungsten Carbide, Stainless Steel, Gold-Plated Phosphor Bronze Hemispherical Tips |
| Display | 4.3-inch TFT LCD showing R, ρ, Rₛ, T, σ, d, αₜ, V, I, probe geometry, spacing, thickness, unit conversion |
| Power Input | AC 220 V ±10%, 50 Hz |
| Max Power Consumption | <30 W |
| Optional Accessories | PC control software (with audit trail & CSV/PDF export), square probe head, linear probe head, motorized XYZ test stage, thermal chamber interface kit |
| Brand | ROOKO |
|---|---|
| Origin | Zhejiang, China |
| Model | FT-371 |
| Measurement Range | 10¹–2×10¹⁰ Ω/□ |
| Resistivity Range | 10²–2×10¹¹ Ω·cm |
| Test Current | 1 mA – 1 pA |
| Current Accuracy | ±0.1% of reading |
| Resistance Accuracy | ≤5% (≤10⁸ Ω), ≤20% (>10⁸ Ω) |
| Display | 4.3" LCD showing R, ρ, Rₛ, T, σ, probe geometry, spacing, thickness, temp. coeff., I/V |
| Measurement Method | Dual-electrode four-point probe (linear or square configuration) |
| Power Supply | AC 220 V ±10%, 50 Hz, <30 W |
| Overall Uncertainty | ≤4% (certified standard sample) |
| Optional Accessories | PC control software, square probe head, linear probe head, temperature-controlled test platform, probe spacing (1/2/3 mm), probe tip materials (tungsten carbide, stainless steel, gold-plated phosphor bronze hemispherical) |
| Brand | Royce |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | AP+ |
| Pricing | Available Upon Request |
| Chip Size Range (Tray) | 0.2 mm² – >25 mm² |
| Chip Size Range (Tape) | 0.5 mm² – ≤17 mm² |
| Input Formats | Tape & Reel Carriers, Waffle Packs, Gel-Paks (2"–4"), JEDEC Trays, Wafer Frames (up to Ø300 mm), Dicing Tape Rings |
| Output Formats | Carrier Tapes (8–24 mm width, heat-seal or pressure-seal), Waffle Packs, Gel-Paks (2"–4"), JEDEC Trays, Tape Frames, Dicing Tape Rings, Custom Fixtures |
| Placement Accuracy | ±12.5 µm (repeatability) |
| Pick Mechanism | Top-surface or edge-vacuum pickup using interchangeable tooling (Rubber, Vespel®, Tungsten Carbide, Elastomer) |
| Cycle Time | As low as 1.3 seconds per die (application-dependent) |
| Brand | RTI / Robson Technologies Inc |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | RTI MT Century Automated Curve Tracer |
| Pricing | Available Upon Request |
| Brand | Ruipho |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | RZJ-304 |
| Viscosity Options | 25 mPa·s |
| Recommended Developer | RZX-3038 |
| Film Thickness Range (Spin-Coated) | 1.0–3.5 µm |
| Prebake | 100°C for 90 s |
| Exposure Dose | 50–75 mJ/cm² |
| Development | RZX-3038 at 23°C for 60 s |
| Post-Exposure Bake | 120°C for 120 s |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-100ST |
| Substrate Diameter | Ø100 mm (4") |
| Deposition Temperature Range | 80–400 °C |
| SiO₂ Deposition Rate | >300 nm/min |
| Maximum Film Thickness | Up to 100 µm |
| Deposition Technology | Liquid-source PECVD with RF self-bias coupling |
| Precursor Type | Liquid TEOS (tetraethyl orthosilicate), optional Ge/P/B dopant sources |
| Stress Control | Low-stress SiO₂ via self-bias tuning |
| Step Coverage | High-aspect-ratio conformality |
| Footprint | Compact, cleanroom space-optimized |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-220N |
| Wafer Capacity | 5 × ø3″, 3 × ø4″, or 1 × ø8″ wafers |
| Footprint Reduction | 40% vs. legacy SAMCO PECVD platforms |
| Process Gases | SiH₄, NH₃, N₂O, TEOS (optional add-on), O₂, Ar, N₂ |
| Plasma Source | RF (13.56 MHz) capacitive coupling |
| Chamber Material | Anodized aluminum with quartz-lined process zone |
| Vacuum System | Dry scroll pump + optional turbo-molecular pump |
| Compliance | CE-marked, compatible with ISO 14644-1 Class 5 cleanroom integration |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-200C |
| Etching Principle | Capacitively Coupled Plasma (CCP) Reactive Ion Etching |
| Uniformity | ±2% across 200 mm wafer |
| Configuration | Direct-Load, Parallel-Plate Electrode Architecture |
| Upgrade Options | Endpoint Detection, High-Capacity Vacuum Pumping, Load Lock Integration, Multi-Gas Delivery System |
| Control Architecture | Client-Server Software with PLC-Based Real-Time Hardware Control |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with SEMI S2/S8 safety standards |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-350iPC |
| Maximum Wafer Diameter | Ø350 mm |
| ICP Source Technology | HSTC™ (Hyper Symmetrical Tornado Coil) |
| Vacuum Pumping | Turbo Molecular Pump (TMP) with Symmetrical Exhaust Design |
| Gas Delivery | Optimized Multi-Channel Manifold |
| Endpoint Detection | Optional Optical Interferometric Monitoring System |
| Application Scope | GaN, GaAs, InP, SiC, SiN, SiO₂, Dielectrics, Metals, PSS Fabrication |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-800BCT |
| Type | Production-Grade Deep Silicon Etching System |
| Discharge Mode | Inductively Coupled Plasma (ICP) |
| Etch Aspect Ratio | >100 |
| Process Capability | High-Rate, High-Selectivity DRIE |
| Application Focus | MEMS, TSV, Power Devices, SOI Wafer Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Control Architecture | Fully automated recipe-driven operation with real-time RF/power monitoring |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | UV-300H |
| Maximum Sample Diameter | Ø800 mm (8-inch) |
| Operating Environment | Ambient Atmospheric Pressure |
| Heating Stage Temperature Range | Room Temperature to 150 °C |
| Safety Features | Interlocked Lid, Ozone Catalyst Scrubber, N₂ Purge Cycle, Thermal Fuse Protection, Emergency Stop |
| Compliance | Designed for ISO Class 5–7 Cleanroom Integration |
| Brand | SciDre |
|---|---|
| Origin | Germany |
| Model | HKZ |
| Maximum Melting Zone Temperature | Up to 3000 °C |
| Melting Zone Pressure Range | 10–300 bar (selectable) |
| Vacuum Level | 1×10⁻⁵ mbar |
| Atmosphere Options | Ar, O₂, N₂, air, or custom gas mixtures |
| Xenon Lamp Power Options | 3 kW, 5 kW, 6.5 kW |
| Sample Rod Diameter | 6.8 mm or 9.8 mm |
| Pulling Rate | 0.1–50 mm/h |
| Rotation Speed | 0–70 rpm |