Optical Instruments
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| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6428-01 / S6429-01 / S6430-01 |
| Component Category | Optical Sensor Element |
| Spectral Peak Wavelengths | 460 nm (blue), 540 nm (green), 660 nm (red) |
| Active Area | 2.8 × 2.4 mm² |
| Spectral Response Ranges | 400–540 nm (S6428-01), 480–600 nm (S6429-01), 590–720 nm (S6430-01) |
| Package | Molded Plastic Housing |
| Detector Material | Silicon Photodiode |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6841 |
| Component Category | Optical Component |
| Package | Surface-Mount Plastic (4.5 × 5.5 mm) |
| Output Type | Digital |
| Supply Voltage | 4.5–5.5 V |
| Spectral Response Range | 380–1120 nm |
| Threshold Illuminance | 0.05 µW/mm² |
| Maximum Permissible Ambient Illuminance | 5000 lx |
| Key Feature | High Sensitivity |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S8550-02 |
| Component Category | Optical Component |
| Type | Short-Wavelength Silicon Avalanche Photodiode Array (4 × 8 pixels) |
| Active Area per Pixel | 1.6 × 1.6 mm |
| Package | Ceramic |
| Peak Wavelength (Typ.) | 600 nm |
| Spectral Response Range (Min.) | 320–1000 nm |
| Dark Current (Max.) | 10 nA |
| Cutoff Frequency (Typ.) | 250 MHz |
| Junction Capacitance (Typ.) | 9 pF |
| Breakdown Voltage (Typ.) | 400 V |
| Temperature Coefficient of Breakdown Voltage (Typ.) | 0.78 V/°C |
| Gain (Typ.) | 50 |
| Operating Temperature | −40 to +85 °C |
| Test Condition | Ta = 25 °C, unless otherwise specified |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S9 |
| Component Category | Optical Sensor ICs |
| Spectral Response Range | 300–820 nm (standard photopic), up to 1000 nm (IR-enhanced variants) |
| Peak Wavelength | 560 nm (standard), 550–650 nm (model-dependent) |
| Output Type | Analog current (0.11–1.8 mA), digital CMOS (S9705) |
| Operating Temperature | –40 °C to +100 °C (S11153-01MT) |
| Human Eye Spectral Match | CIE 1931 Photopic Luminosity Function compliant |
| IR Immunity | Enhanced rejection of 850–950 nm remote-control interference |
| Color-Temperature Stability | < ±3% output variation across 2700 K–6500 K white-light sources |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | S9684, S9703-10/11, S10317-01, S11257-01DT/02DT, S11282-01DS |
| Component Category | Optical Sensor ICs |
| Package Type | Surface-Mount Device (SMD) |
| Pixel Count | 1 or 2 active photodiode elements |
| Operating Mode | Low-Voltage Operation (≤3.3 V) or Standard Operation (5 V) |
| Transimpedance Gain Options | 6× or 20× current amplification |
| Laser Power Compatibility | Optimized for low-power visible-to-NIR laser beams (e.g., 635–780 nm) |
| Compliance | RoHS-compliant, AEC-Q200 qualified variants available upon request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S910 |
| Component Category | Optical Component |
| Package Type | Plastic Molded Housing |
| Photodiode Configuration | Triple-channel (R, G, B) Silicon Photodiodes |
| Spectral Response (Typ.) | Blue Channel: 400–540 nm |
| Green Channel | 480–600 nm |
| Red Channel | 590–720 nm |
| Active Area | 1.0 × 1.0 mm² |
| Interface | Analog Output (Voltage or Current Proportional to Illuminance per Channel) |
| Operating Temperature | −10 °C to +60 °C |
| Storage Temperature | −40 °C to +85 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S |
| Component Category | Optical Component |
| Spectral Range | 200–1150 nm |
| Active Area Options | Ø0.2 to Ø10 mm |
| Package Types | Metal, Ceramic, Plastic |
| Typical Gain | 50–200 (bias-dependent) |
| Rise Time | <0.5 ns to ~15 ns (model-dependent) |
| Breakdown Voltage | 120–400 V |
| Capacitance | As low as 0.12 pF (S8664-02K) |
| Bandwidth | Up to 700 MHz (S8664-02K) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12742-220 |
| Component Type | UV-Specific Photodetector |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 216–224 nm (FWHM ≈ 10 nm) |
| Peak Wavelength (typ.) | 220 nm |
| Responsivity (typ.) | 0.006 A/W @ 220 nm |
| Dark Current (max.) | 25 pA @ VR = 10 mV |
| Reverse Voltage (max.) | 5 V |
| Rise Time (typ.) | 1 µs |
| Junction Capacitance (typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Package | Hermetically Sealed Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | Typical at Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S12742-254 |
| Component Category | Optical Element |
| Spectral Bandwidth (FWHM) | 10 nm |
| Peak Wavelength (Typ.) | 254 nm |
| Active Area | 3.6 × 3.6 mm² |
| Cooling Method | Non-cooled |
| Package Type | Metal |
| Max Reverse Voltage | 5 V |
| Spectral Response Range | 252–256 nm |
| Photosensitivity (Typ.) | 0.018 A/W @ 254 nm |
| Max Dark Current | 25 pA @ VR = 10 mV |
| Rise Time (Typ.) | 1 μs |
| Junction Capacitance (Typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12742-275 |
| Component Type | UV-Optimized Photodetector |
| Spectral Range | 271–279 nm (Peak at 275 nm) |
| Active Area | 3.6 × 3.6 mm² |
| Photosensitivity (Typ.) | 0.01 A/W @ 275 nm |
| Dark Current (Max.) | 25 pA @ VR = 10 mV |
| Reverse Voltage (Max.) | 5 V |
| Rise Time (Typ.) | 1 µs |
| Junction Capacitance (Typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Package | Hermetically Sealed Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | Typical Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1336-44BK |
| Component Type | Silicon Photodiode |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 320–1100 nm |
| Peak Responsivity Wavelength (Typ.) | 960 nm |
| Responsivity (Typ. at 960 nm) | 0.5 A/W |
| Dark Current (Max. at VR = 10 mV) | 50 pA |
| Junction Capacitance (Typ. at VR = 0 V, f = 10 kHz) | 150 pF |
| Rise Time (Typ. at VR = 0 V) | 0.5 μs |
| Maximum Reverse Voltage | 5 V |
| Package | TO-5 Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | S1336-44BQ |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 190–1100 nm |
| Peak Responsivity Wavelength (Typ.) | 960 nm |
| Responsivity (Typ. at 960 nm) | 0.5 A/W |
| Dark Current (Max. at VR = 10 mV) | 50 pA |
| Junction Capacitance (Typ. at VR = 0 V, f = 10 kHz) | 150 pF |
| Rise Time (Typ. at VR = 0 V) | 0.5 µs |
| Reverse Voltage (Max.) | 5 V |
| Package | TO-5 Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1337-33BQ |
| Component Type | Silicon Photodiode |
| Spectral Range | 190–1100 nm |
| Active Area | 2.4 × 2.4 mm² |
| Peak Wavelength (Typ.) | 960 nm |
| Responsivity (Typ.) | 0.5 A/W @ 960 nm |
| Quantum Efficiency | 75 % @ 200 nm |
| Dark Current (Max.) | 30 pA @ VR = 10 mV |
| Junction Capacitance (Typ.) | 65 pF @ VR = 0 V, f = 10 kHz |
| Rise Time (Typ.) | 0.2 µs @ VR = 0 V |
| Reverse Voltage (Max.) | 5 V |
| Package | Ceramic |
| Cooling | Non-cooled |
| Operating Temperature | Ta = 25 °C (unless specified) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | Full Series |
| Price Range | USD 0 – 7,000 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Source |
| Model | SLD |
| Light Source Type | Superluminescent Diode (SLD) |
| Illumination Mode | External Illumination |
| Radiant Flux (L8414-41) | 3 mW |
| Radiant Flux (L11607-04) | 30 mW |
| Center Emission Wavelength (L8414-41, typ.) | 830 nm |
| Center Emission Wavelength (L11607-04, typ.) | 875 nm |
| Spectral FWHM (L8414-41, typ.) | 15 nm |
| Spectral FWHM (L11607-04, typ.) | 10 nm |
| Coherence Length (L8414-41, typ.) | 50 µm |
| Coherence Length (L11607-04, typ.) | 28 µm |
| Operating Temperature Range (L8414-41) | −10 to +70 °C |
| Operating Temperature Range (L11607-04) | −10 to +50 °C |
| Storage Temperature Range | −20 to +80 °C |
| Forward Voltage (L8414-41, typ.) | 2.0 V |
| Forward Voltage (L11607-04, typ.) | 1.8 V |
| Operating Current (L8414-41, typ.) | 0.1 A |
| Operating Current (L11607-04, typ.) | 0.11 A |
| Emission Width | 5 µm |
| Beam Divergence (Parallel, typ.) | 10°–23° |
| Beam Divergence (Perpendicular, typ.) | 35° |
| Monitor Photodiode Current (typ.) | 0.16 mA |
| Package | 9.0 mm CD |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Instrument |
| Model | C10000-801 |
| Price Range | USD 14,000 – 70,000 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Instrument |
| Model | L14890-09 |
| Core Component | Pulsed Semiconductor QCL Source |
| Pulse Output Power (Max) | 900 mW |
| Pulse Repetition Frequency (Typ.) | 180 kHz |
| Integrated Collimating Lens | Yes |
| Dimensions (W × H × D) | 82 mm × 88 mm × 112 mm |
| Weight | 1.2 kg |
| Central Wavenumber (Typ.) | 1075 cm⁻¹ |
| Wavenumber Tuning Range (Typ.) | 200 cm⁻¹ |
| Tuning Mechanism | MEMS-based External Cavity |
| Origin | Japan |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | UV Curing Light Source |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | H13126_C12918 |
| Component Type | Optical Sensor Module |
| Output Interfaces | Digital (photon counting) + Analog (voltage) |
| Connectivity | USB 2.0 |
| Compliance | CE-marked (C12918-A1/A2/A3 variants for JP/US/EU markets) |
| Operating Temperature | 0 to +40 °C |
| Storage Temperature | −20 to +60 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | X10 |
| Component Category | Optical Element |
| Active Area | 16 × 12 mm |
| Wavelength Ranges | 400–700 nm, 410±10 nm, 510±50 nm, 620–1100 nm, 650±50 nm, 800±50 nm, 1000–1550 nm, 1050±50 nm |
| Diffraction Efficiency | 79–95% |
| Drive Interface | DVI from PC via CMOS backplane |
| Origin | Japan |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | X10468 |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | X2D2 |
| Light Source Type | Continuous-wave Deuterium Arc Lamp |
| Illumination Mode | External Irradiation Configuration |
| Radiant Output Stability | <0.5% RMS over 8 hours |
| Typical Lifetime | ≥2,000 hours at rated current |
| Spectral Range | 190–400 nm (UV-Vis continuum) |
| UV Output Power (at 220 nm) | ≥1.2 mW/nm (collimated, 1 mrad divergence) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | L-Series |
| Light Source Type | Xenon Arc Lamp |
| Illumination Mode | External Irradiation |
| Spectral Range | 185 nm – 2000 nm (model-dependent, down to 220 nm or 240 nm with optional filtering) |
| Typical Power Ratings | 35 W, 75 W, 100 W, 150 W, 200–500 W |
| Lamp Architecture | Short-Arc or Long-Life Sealed-Quartz Envelope |
| Electrode Design | High-Performance Tungsten-Thoriated Cathode |
| Origin | Japan |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | HCL Series |
| Pricing | Available Upon Request |
| Brand | HanDing / HT |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | HTMM12.7 |
| Pricing | Available Upon Request |
| Brand | HanDing (HT) |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Product Type | Manual Translation Stage |
| Model | HTVS25/50 |
| Travel Range | 25 mm / 50 mm (selectable variants) |
| Load Capacity | High (designed for optical payloads up to 5 kg) |
| Actuation | Precision Micrometer Drive with Locking Mechanism |
| Construction | Anodized Aluminum Base with Stainless Steel Lead Screw |
| Compliance | CE-marked for laboratory use |
| Brand | Handingding (HT) |
|---|---|
| Model | HTAC-RC-02 |
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Pricing | Available Upon Request |
| Brand | Hanna Instruments |
|---|---|
| Origin | Italy |
| Model | HI 93703-11 |
| Type | Portable Turbidimeter |
| Measurement Range | 0.00–50.00 FTU (NTU) and 50–1000 FTU (NTU) |
| Resolution | 0.01 FTU (NTU) |
| Accuracy | ±5% of reading or ±0.5 FTU (NTU), whichever is greater |
| Light Source | 890 nm infrared LED |
| Operating Temperature | 0 to 50.0 °C |
| Relative Humidity | up to 95% RH |
| Dimensions | 220 × 82 × 66 mm |
| Weight | 510 g |
| Data Storage | 200 measurement records |
| Calibration | Automatic 3-point calibration (0, 10, 500 FTU) |
| GLP Compliance | Timestamped calibration history and real-time clock |
| Interface | RS232 serial port |
| Power Supply | 4 × 1.5 V AA batteries |
| Brand | Hanon |
|---|---|
| Origin | Shandong, China |
| Model | A630 |
| Instrument Type | Benchtop Refractometer |
| Temperature Control | Peltier-based |
| Digital Display | Yes |
| Refractive Index Range | 1.3000–1.7000 (nD) |
| Brix Accuracy | ±0.1% |
| nD Resolution | 0.0001 |
| Temperature Control Range | 10–50 °C |
| Temperature Stability | ±0.05 °C |
| Display | 7-inch capacitive touchscreen (Android OS) |
| Data Storage | 4 GB internal |
| Connectivity | 2× USB, RS232, Ethernet |
| Prism Material | Sapphire-grade optical glass |
| Light Source | >100,000 h LED |
| Compliance | FDA 21 CFR Part 11 (audit trail, user roles, electronic signature support) |
| Brand | Hanon |
|---|---|
| Model | A670 |
| Type | Benchtop Refractometer |
| Temperature Control | Peltier-based, 5–80 °C (±0.02 °C) |
| Display | 7-inch capacitive touchscreen (Android OS) |
| Measurement Range | 1.30000–1.70000 (nD) |
| Accuracy | ±0.0001 (nD) |
| Resolution | 0.0001 / 0.00001 (nD) selectable |
| Brix Range | 0–100.0% (±0.1%) |
| Light Source | >100,000 hr LED |
| Prism Material | Sapphire-grade optical glass |
| Data Storage | 4 GB internal + USB backup |
| Connectivity | 2× USB, RS232, Ethernet, Wi-Fi (A670 only) |
| Compliance | FDA 21 CFR Part 11 (user roles, audit trail, electronic signature, data integrity) |