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BrandAmptek
OriginUSA
ModelXR-100SDD
Detector TypeSilicon Drift Detector (SDD)
Active Area25 mm²
Thickness500 µm
Energy Resolution125 eV FWHM @ 5.9 keV (11.2 µs peaking time)
Max Count Rate500,000 cps
Peak-to-Background Ratio20,000:1 (5.9 keV / 1 keV)
Be Window Thickness12.5 µm (0.5 mil)
Operating Temperature~250 K (−23 °C)
CoolingTwo-stage thermoelectric (Peltier), no liquid nitrogen required
EncapsulationTO-8 metal can with vacuum-compatible Be window
Power Consumption<1 W
CertificationsUL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TÜV Certificate #CU 72072412 02
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BrandAmptek
OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelOEM System Package
PricingUpon Request
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BrandAMPTEK
OriginUSA
ModelX-123 FAST SDD C2 Window
Detector TypeSilicon Drift Detector (SDD)
Window MaterialUltra-thin Si₃N₄ (C2 series)
Elemental Detection RangeC (4.9 keV) to U (98 keV)
Energy Resolution≤125 eV at Mn Kα (5.9 keV), typical
Count Rate CapabilityUp to 10⁶ counts/second
Vacuum CompatibilityYes, integrated vacuum interface
Standard InterfaceUSB 2.0 and digital pulse processing
ComplianceCE, RoHS, FCC Class A
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BrandAmptek
OriginUSA
Manufacturer TypeAuthorized Distributor
Product CategoryImported
ModelOEM Solution
PricingUpon Request
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BrandAmptek
OriginUSA
ModelXR-100CR
Detector TypeSi-PIN
Active Area6–25 mm²
Thickness300 or 500 µm
Be Window12.5 or 25 µm
Energy Resolution145–230 eV FWHM (@ 5.9 keV, ⁵⁵Fe)
CoolingTwo-stage thermoelectric (TEC), operating temp ≈ −55 °C
Power Consumption<1 W
HousingTO-8 hermetic package
ComplianceUL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TUV Certified (CU 72072412 01)
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BrandAmptek
OriginUSA
ModelMini-X-OEM
X-ray Tube TypeMetal-Ceramic
Operating Voltage Range5–50 kV
Tube Current Range0–200 µA
Max Power4 W
Anode Material (Standard)Au, Ag, or Rh
Anode Material (Optional)W
Window MaterialBe (125 µm)
Beam Spot Size~2 mm
Output Divergence Angle120° (5° with 2 mm collimator)
Input Voltage6–12 VDC
Input Current1.35 A (typ. @6 V), 0.70 A (typ. @12 V)
HV Stability<0.1%
CoolingConductive (user-supplied heatsink required)
Operating Temperature−10 °C to +60 °C (housing)
Humidity30–90% RH (non-condensing)
Weight340 g
Radiation ShieldingIntegrated self-shielding (except output window)
Control InterfaceAnalog voltage inputs (0–4 V for kV/µA) and TTL logic outputs
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BrandAmptek
OriginUSA
ModelMCA8000D
ADC100 MHz, 16-bit
Channel Count8,192 (8K)
Pulse Peaking Time≥500 ns (200 ns shaping)
Conversion Time10 ns
Differential Nonlinearity<±0.6%
Integral Nonlinearity<±0.02%
Input Range0–1 V or 0–10 V (software-selectable)
InterfacesUSB 2.0 Full-Speed, RS-232 (115 kbps), Ethernet (10BASE-T)
Dimensions125 × 71 × 20 mm
Weight165 g
Operating Temperature−20 to +60 °C
Power+4 to +5.5 V DC, ≤2 W
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BrandAmptek
OriginUSA
ModelX-123
Detector TypeSi-PIN
Active Area6–25 mm²
Thickness300–500 µm
Energy Range1.5–40 keV
Resolution (FWHM @ 5.9 keV)145–230 eV
Max Count Rate2 × 10⁶ cps
Power Consumption2.5 W (typ.)
Dimensions70 × 100 × 25 mm
Weight180 g
CoolingTwo-stage thermoelectric (ΔT ≤ 85 °C)
InterfaceUSB 2.0, RS-232, Ethernet (10BASE-T)
ComplianceRoHS, UL 61010-1:2009, CAN/CSA C22.2 No. 61010-1
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BrandAMPTEK
OriginUSA
ModelX-123FAST SDD (70 mm²)
Resolution123 eV FWHM @ 5.9 keV
Max Count Rate>1,000,000 cps
Peak-to-Background Ratio26,000:1
Window Options0.5-mil Be or Si₃N₄ (C2)
Cooling ΔT>85 K
Preamplifier Output Pulse Width<60 ns
Active Si Thickness500 µm
Collimated Effective Area50 mm²
Total Sensitive Area70 mm²
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BrandAmptek
OriginUSA
ModelC1/C2
Window SubstrateSilicon Nitride (Si₃N₄)
Top LayerAluminum Coating
ThicknessC1 ≈ 80 nm, C2 ≈ 150 nm
Compatible DetectorsSuperSDD™ Series, 25 mm² / 500 µm thick silicon drift detectors
Energy Range ExtensionDown to Boron (B, Z=5) and Carbon (C, Z=6)
ComplianceASTM E135 – Standard Terminology Relating to Analytical Chemistry
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BrandAmptek
OriginUSA
ModelFast SDD
Detector TypeSilicon Drift Detector (SDD)
Energy Resolution (FWHM)≤125 eV at Mn Kα (5.9 keV)
Peak Shaping Time0.2–1.0 µs (adjustable)
Maximum Input Count Rate≥1.2 Mcps
Output Count Rate Linearity>99.5% up to 1.2 Mcps
Operating Temperature−20 °C to −35 °C (Peltier-cooled)
Active Area50 mm² (standard)
Thickness450 µm
ComplianceRoHS, CE
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BrandAmptek
OriginUSA
ModelPA-210/PA-230
Power Supply Requirements+5 VDC @ 15 mA, −5 VDC @ 15 mA
HV Input Range+100 to +200 V (Si-PIN), −90 to −260 V (SDD/CdTe)
TEC Drive+3.5 VDC @ 350 mA
Temperature Monitoring160 µA-biased silicon diode output
Signal OutputNegative pulse (Si-PIN), Positive pulse (SDD/CdTe)
Connector10-pin micro-DIN (1.0 mm pitch)
Thermal Control CapabilityClosed-loop stabilization down to 230 K (−43 °C)
ComplianceDesigned for integration into ISO/IEC 17025-compliant XRF, XRD, and EDX systems
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