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| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | XR-100SDD |
| Detector Type | Silicon Drift Detector (SDD) |
| Active Area | 25 mm² |
| Thickness | 500 µm |
| Energy Resolution | 125 eV FWHM @ 5.9 keV (11.2 µs peaking time) |
| Max Count Rate | 500,000 cps |
| Peak-to-Background Ratio | 20,000:1 (5.9 keV / 1 keV) |
| Be Window Thickness | 12.5 µm (0.5 mil) |
| Operating Temperature | ~250 K (−23 °C) |
| Cooling | Two-stage thermoelectric (Peltier), no liquid nitrogen required |
| Encapsulation | TO-8 metal can with vacuum-compatible Be window |
| Power Consumption | <1 W |
| Certifications | UL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TÜV Certificate #CU 72072412 02 |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | OEM System Package |
| Pricing | Upon Request |
| Brand | AMPTEK |
|---|---|
| Origin | USA |
| Model | X-123 FAST SDD C2 Window |
| Detector Type | Silicon Drift Detector (SDD) |
| Window Material | Ultra-thin Si₃N₄ (C2 series) |
| Elemental Detection Range | C (4.9 keV) to U (98 keV) |
| Energy Resolution | ≤125 eV at Mn Kα (5.9 keV), typical |
| Count Rate Capability | Up to 10⁶ counts/second |
| Vacuum Compatibility | Yes, integrated vacuum interface |
| Standard Interface | USB 2.0 and digital pulse processing |
| Compliance | CE, RoHS, FCC Class A |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported |
| Model | OEM Solution |
| Pricing | Upon Request |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | XR-100CR |
| Detector Type | Si-PIN |
| Active Area | 6–25 mm² |
| Thickness | 300 or 500 µm |
| Be Window | 12.5 or 25 µm |
| Energy Resolution | 145–230 eV FWHM (@ 5.9 keV, ⁵⁵Fe) |
| Cooling | Two-stage thermoelectric (TEC), operating temp ≈ −55 °C |
| Power Consumption | <1 W |
| Housing | TO-8 hermetic package |
| Compliance | UL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TUV Certified (CU 72072412 01) |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | Mini-X-OEM |
| X-ray Tube Type | Metal-Ceramic |
| Operating Voltage Range | 5–50 kV |
| Tube Current Range | 0–200 µA |
| Max Power | 4 W |
| Anode Material (Standard) | Au, Ag, or Rh |
| Anode Material (Optional) | W |
| Window Material | Be (125 µm) |
| Beam Spot Size | ~2 mm |
| Output Divergence Angle | 120° (5° with 2 mm collimator) |
| Input Voltage | 6–12 VDC |
| Input Current | 1.35 A (typ. @6 V), 0.70 A (typ. @12 V) |
| HV Stability | <0.1% |
| Cooling | Conductive (user-supplied heatsink required) |
| Operating Temperature | −10 °C to +60 °C (housing) |
| Humidity | 30–90% RH (non-condensing) |
| Weight | 340 g |
| Radiation Shielding | Integrated self-shielding (except output window) |
| Control Interface | Analog voltage inputs (0–4 V for kV/µA) and TTL logic outputs |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | MCA8000D |
| ADC | 100 MHz, 16-bit |
| Channel Count | 8,192 (8K) |
| Pulse Peaking Time | ≥500 ns (200 ns shaping) |
| Conversion Time | 10 ns |
| Differential Nonlinearity | <±0.6% |
| Integral Nonlinearity | <±0.02% |
| Input Range | 0–1 V or 0–10 V (software-selectable) |
| Interfaces | USB 2.0 Full-Speed, RS-232 (115 kbps), Ethernet (10BASE-T) |
| Dimensions | 125 × 71 × 20 mm |
| Weight | 165 g |
| Operating Temperature | −20 to +60 °C |
| Power | +4 to +5.5 V DC, ≤2 W |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | X-123 |
| Detector Type | Si-PIN |
| Active Area | 6–25 mm² |
| Thickness | 300–500 µm |
| Energy Range | 1.5–40 keV |
| Resolution (FWHM @ 5.9 keV) | 145–230 eV |
| Max Count Rate | 2 × 10⁶ cps |
| Power Consumption | 2.5 W (typ.) |
| Dimensions | 70 × 100 × 25 mm |
| Weight | 180 g |
| Cooling | Two-stage thermoelectric (ΔT ≤ 85 °C) |
| Interface | USB 2.0, RS-232, Ethernet (10BASE-T) |
| Compliance | RoHS, UL 61010-1:2009, CAN/CSA C22.2 No. 61010-1 |
| Brand | AMPTEK |
|---|---|
| Origin | USA |
| Model | X-123FAST SDD (70 mm²) |
| Resolution | 123 eV FWHM @ 5.9 keV |
| Max Count Rate | >1,000,000 cps |
| Peak-to-Background Ratio | 26,000:1 |
| Window Options | 0.5-mil Be or Si₃N₄ (C2) |
| Cooling ΔT | >85 K |
| Preamplifier Output Pulse Width | <60 ns |
| Active Si Thickness | 500 µm |
| Collimated Effective Area | 50 mm² |
| Total Sensitive Area | 70 mm² |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | C1/C2 |
| Window Substrate | Silicon Nitride (Si₃N₄) |
| Top Layer | Aluminum Coating |
| Thickness | C1 ≈ 80 nm, C2 ≈ 150 nm |
| Compatible Detectors | SuperSDD™ Series, 25 mm² / 500 µm thick silicon drift detectors |
| Energy Range Extension | Down to Boron (B, Z=5) and Carbon (C, Z=6) |
| Compliance | ASTM E135 – Standard Terminology Relating to Analytical Chemistry |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | Fast SDD |
| Detector Type | Silicon Drift Detector (SDD) |
| Energy Resolution (FWHM) | ≤125 eV at Mn Kα (5.9 keV) |
| Peak Shaping Time | 0.2–1.0 µs (adjustable) |
| Maximum Input Count Rate | ≥1.2 Mcps |
| Output Count Rate Linearity | >99.5% up to 1.2 Mcps |
| Operating Temperature | −20 °C to −35 °C (Peltier-cooled) |
| Active Area | 50 mm² (standard) |
| Thickness | 450 µm |
| Compliance | RoHS, CE |
| Brand | Amptek |
|---|---|
| Origin | USA |
| Model | PA-210/PA-230 |
| Power Supply Requirements | +5 VDC @ 15 mA, −5 VDC @ 15 mA |
| HV Input Range | +100 to +200 V (Si-PIN), −90 to −260 V (SDD/CdTe) |
| TEC Drive | +3.5 VDC @ 350 mA |
| Temperature Monitoring | 160 µA-biased silicon diode output |
| Signal Output | Negative pulse (Si-PIN), Positive pulse (SDD/CdTe) |
| Connector | 10-pin micro-DIN (1.0 mm pitch) |
| Thermal Control Capability | Closed-loop stabilization down to 230 K (−43 °C) |
| Compliance | Designed for integration into ISO/IEC 17025-compliant XRF, XRD, and EDX systems |
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