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AMETEK China

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BrandAmptek
OriginUSA
ModelXR-100SDD
Detector TypeSilicon Drift Detector (SDD)
Active Area25 mm²
Thickness500 µm
Energy Resolution125 eV FWHM @ 5.9 keV (11.2 µs peaking time)
Max Count Rate500,000 cps
Peak-to-Background Ratio20,000:1 (5.9 keV / 1 keV)
Be Window Thickness12.5 µm (0.5 mil)
Operating Temperature~250 K (−23 °C)
CoolingTwo-stage thermoelectric (Peltier), no liquid nitrogen required
EncapsulationTO-8 metal can with vacuum-compatible Be window
Power Consumption<1 W
CertificationsUL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TÜV Certificate #CU 72072412 02
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BrandAmptek
OriginUSA
ModelXR-100CR
Detector TypeSi-PIN
Active Area6–25 mm²
Thickness300 or 500 µm
Be Window12.5 or 25 µm
Energy Resolution145–230 eV FWHM (@ 5.9 keV, ⁵⁵Fe)
CoolingTwo-stage thermoelectric (TEC), operating temp ≈ −55 °C
Power Consumption<1 W
HousingTO-8 hermetic package
ComplianceUL 61010-1:2004, CAN/CSA-C22.2 No. 61010-1:2004, TUV Certified (CU 72072412 01)
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BrandAMPTEK
OriginUSA
ModelX-123FAST SDD (70 mm²)
Resolution123 eV FWHM @ 5.9 keV
Max Count Rate>1,000,000 cps
Peak-to-Background Ratio26,000:1
Window Options0.5-mil Be or Si₃N₄ (C2)
Cooling ΔT>85 K
Preamplifier Output Pulse Width<60 ns
Active Si Thickness500 µm
Collimated Effective Area50 mm²
Total Sensitive Area70 mm²
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BrandAmptek
OriginUSA
ModelFast SDD
Detector TypeSilicon Drift Detector (SDD)
Energy Resolution (FWHM)≤125 eV at Mn Kα (5.9 keV)
Peak Shaping Time0.2–1.0 µs (adjustable)
Maximum Input Count Rate≥1.2 Mcps
Output Count Rate Linearity>99.5% up to 1.2 Mcps
Operating Temperature−20 °C to −35 °C (Peltier-cooled)
Active Area50 mm² (standard)
Thickness450 µm
ComplianceRoHS, CE
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