Hamamatsu
Filter
Showing 271–298 of 298 results
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S8550-02 |
| Component Category | Optical Component |
| Type | Short-Wavelength Silicon Avalanche Photodiode Array (4 × 8 pixels) |
| Active Area per Pixel | 1.6 × 1.6 mm |
| Package | Ceramic |
| Peak Wavelength (Typ.) | 600 nm |
| Spectral Response Range (Min.) | 320–1000 nm |
| Dark Current (Max.) | 10 nA |
| Cutoff Frequency (Typ.) | 250 MHz |
| Junction Capacitance (Typ.) | 9 pF |
| Breakdown Voltage (Typ.) | 400 V |
| Temperature Coefficient of Breakdown Voltage (Typ.) | 0.78 V/°C |
| Gain (Typ.) | 50 |
| Operating Temperature | −40 to +85 °C |
| Test Condition | Ta = 25 °C, unless otherwise specified |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S8658-01 / S8658-01F |
| Frame Rate (typ.) | 15 fps |
| Active Image Area (per chip) | 73.728 mm × 6.144 mm |
| Pixel Pitch | 48 µm |
| Total Pixels | 4608 × 128 (3 × 1536 × 128) |
| Pixel Size | 48 µm × 48 µm |
| Fill Factor | 100% |
| Scintillator | CsI(Tl) + Fiber Optic Plate (FOP) (S8658-01) / FOP only, no scintillator (S8658-01F) |
| Package | Ceramic |
| TDI Mode | Supported |
| Dynamic Range | Wide |
| Dark Current | Low |
| Operation Mode | MPP (Multi-Pinned Phase) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S9 |
| Component Category | Optical Sensor ICs |
| Spectral Response Range | 300–820 nm (standard photopic), up to 1000 nm (IR-enhanced variants) |
| Peak Wavelength | 560 nm (standard), 550–650 nm (model-dependent) |
| Output Type | Analog current (0.11–1.8 mA), digital CMOS (S9705) |
| Operating Temperature | –40 °C to +100 °C (S11153-01MT) |
| Human Eye Spectral Match | CIE 1931 Photopic Luminosity Function compliant |
| IR Immunity | Enhanced rejection of 850–950 nm remote-control interference |
| Color-Temperature Stability | < ±3% output variation across 2700 K–6500 K white-light sources |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | S9684, S9703-10/11, S10317-01, S11257-01DT/02DT, S11282-01DS |
| Component Category | Optical Sensor ICs |
| Package Type | Surface-Mount Device (SMD) |
| Pixel Count | 1 or 2 active photodiode elements |
| Operating Mode | Low-Voltage Operation (≤3.3 V) or Standard Operation (5 V) |
| Transimpedance Gain Options | 6× or 20× current amplification |
| Laser Power Compatibility | Optimized for low-power visible-to-NIR laser beams (e.g., 635–780 nm) |
| Compliance | RoHS-compliant, AEC-Q200 qualified variants available upon request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S910 |
| Component Category | Optical Component |
| Package Type | Plastic Molded Housing |
| Photodiode Configuration | Triple-channel (R, G, B) Silicon Photodiodes |
| Spectral Response (Typ.) | Blue Channel: 400–540 nm |
| Green Channel | 480–600 nm |
| Red Channel | 590–720 nm |
| Active Area | 1.0 × 1.0 mm² |
| Interface | Analog Output (Voltage or Current Proportional to Illuminance per Channel) |
| Operating Temperature | −10 °C to +60 °C |
| Storage Temperature | −40 °C to +85 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model Series | R-Series |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S |
| Component Category | Optical Component |
| Spectral Range | 200–1150 nm |
| Active Area Options | Ø0.2 to Ø10 mm |
| Package Types | Metal, Ceramic, Plastic |
| Typical Gain | 50–200 (bias-dependent) |
| Rise Time | <0.5 ns to ~15 ns (model-dependent) |
| Breakdown Voltage | 120–400 V |
| Capacitance | As low as 0.12 pF (S8664-02K) |
| Bandwidth | Up to 700 MHz (S8664-02K) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12742-220 |
| Component Type | UV-Specific Photodetector |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 216–224 nm (FWHM ≈ 10 nm) |
| Peak Wavelength (typ.) | 220 nm |
| Responsivity (typ.) | 0.006 A/W @ 220 nm |
| Dark Current (max.) | 25 pA @ VR = 10 mV |
| Reverse Voltage (max.) | 5 V |
| Rise Time (typ.) | 1 µs |
| Junction Capacitance (typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Package | Hermetically Sealed Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | Typical at Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S12742-254 |
| Component Category | Optical Element |
| Spectral Bandwidth (FWHM) | 10 nm |
| Peak Wavelength (Typ.) | 254 nm |
| Active Area | 3.6 × 3.6 mm² |
| Cooling Method | Non-cooled |
| Package Type | Metal |
| Max Reverse Voltage | 5 V |
| Spectral Response Range | 252–256 nm |
| Photosensitivity (Typ.) | 0.018 A/W @ 254 nm |
| Max Dark Current | 25 pA @ VR = 10 mV |
| Rise Time (Typ.) | 1 μs |
| Junction Capacitance (Typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12742-275 |
| Component Type | UV-Optimized Photodetector |
| Spectral Range | 271–279 nm (Peak at 275 nm) |
| Active Area | 3.6 × 3.6 mm² |
| Photosensitivity (Typ.) | 0.01 A/W @ 275 nm |
| Dark Current (Max.) | 25 pA @ VR = 10 mV |
| Reverse Voltage (Max.) | 5 V |
| Rise Time (Typ.) | 1 µs |
| Junction Capacitance (Typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Package | Hermetically Sealed Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | Typical Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1336-44BK |
| Component Type | Silicon Photodiode |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 320–1100 nm |
| Peak Responsivity Wavelength (Typ.) | 960 nm |
| Responsivity (Typ. at 960 nm) | 0.5 A/W |
| Dark Current (Max. at VR = 10 mV) | 50 pA |
| Junction Capacitance (Typ. at VR = 0 V, f = 10 kHz) | 150 pF |
| Rise Time (Typ. at VR = 0 V) | 0.5 μs |
| Maximum Reverse Voltage | 5 V |
| Package | TO-5 Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | S1336-44BQ |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 190–1100 nm |
| Peak Responsivity Wavelength (Typ.) | 960 nm |
| Responsivity (Typ. at 960 nm) | 0.5 A/W |
| Dark Current (Max. at VR = 10 mV) | 50 pA |
| Junction Capacitance (Typ. at VR = 0 V, f = 10 kHz) | 150 pF |
| Rise Time (Typ. at VR = 0 V) | 0.5 µs |
| Reverse Voltage (Max.) | 5 V |
| Package | TO-5 Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1337-33BQ |
| Component Type | Silicon Photodiode |
| Spectral Range | 190–1100 nm |
| Active Area | 2.4 × 2.4 mm² |
| Peak Wavelength (Typ.) | 960 nm |
| Responsivity (Typ.) | 0.5 A/W @ 960 nm |
| Quantum Efficiency | 75 % @ 200 nm |
| Dark Current (Max.) | 30 pA @ VR = 10 mV |
| Junction Capacitance (Typ.) | 65 pF @ VR = 0 V, f = 10 kHz |
| Rise Time (Typ.) | 0.2 µs @ VR = 0 V |
| Reverse Voltage (Max.) | 5 V |
| Package | Ceramic |
| Cooling | Non-cooled |
| Operating Temperature | Ta = 25 °C (unless specified) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | Full Series |
| Price Range | USD 0 – 7,000 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Source |
| Model | SLD |
| Light Source Type | Superluminescent Diode (SLD) |
| Illumination Mode | External Illumination |
| Radiant Flux (L8414-41) | 3 mW |
| Radiant Flux (L11607-04) | 30 mW |
| Center Emission Wavelength (L8414-41, typ.) | 830 nm |
| Center Emission Wavelength (L11607-04, typ.) | 875 nm |
| Spectral FWHM (L8414-41, typ.) | 15 nm |
| Spectral FWHM (L11607-04, typ.) | 10 nm |
| Coherence Length (L8414-41, typ.) | 50 µm |
| Coherence Length (L11607-04, typ.) | 28 µm |
| Operating Temperature Range (L8414-41) | −10 to +70 °C |
| Operating Temperature Range (L11607-04) | −10 to +50 °C |
| Storage Temperature Range | −20 to +80 °C |
| Forward Voltage (L8414-41, typ.) | 2.0 V |
| Forward Voltage (L11607-04, typ.) | 1.8 V |
| Operating Current (L8414-41, typ.) | 0.1 A |
| Operating Current (L11607-04, typ.) | 0.11 A |
| Emission Width | 5 µm |
| Beam Divergence (Parallel, typ.) | 10°–23° |
| Beam Divergence (Perpendicular, typ.) | 35° |
| Monitor Photodiode Current (typ.) | 0.16 mA |
| Package | 9.0 mm CD |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model Category | Streak Camera Series |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Instrument |
| Model | C10000-801 |
| Price Range | USD 14,000 – 70,000 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | TG Series |
| Spectral Range | 900–1700 nm |
| Detector | InGaAs linear array |
| Pixel Count | 512 pixels |
| Spectral Resolution (FWHM, max) | 7 nm |
| A/D Resolution | 16 bits |
| Cooling | Uncooled |
| Interface | USB 2.0 |
| Power Supply | Bus-powered via USB |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Origin Category | Imported Instrument |
| Model | THEMOS mini |
| Pricing | Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | TM / RC / TG / MS |
| Detector Type | InGaAs |
| Spectral Range | 200–2550 nm (model-dependent) |
| Optical Resolution (FWHM) | 1–20 nm (model-dependent) |
| Cooling | Thermoelectric (TE) or uncooled |
| Dynamic Range | >5,000:1 (typical, model- and integration-time-dependent) |
| Signal-to-Noise Ratio | Up to 10,000:1 (peak, with TE cooling and optimal integration) |
| Stray Light | <0.05% (typical, at 600 nm relative to peak) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | TM Series |
| Spectral Range | 320–1000 nm (Visible to Near-Infrared) |
| Detector Type | Back-Illuminated CCD |
| Spectral Resolution (FWHM, max) | 1 nm |
| A/D Conversion | 16-bit |
| Interface | USB 1.1 |
| Pixel Count | 2048 |
| Operating Temperature | 25 °C (typ.) |
| Cooling | Uncooled |
| Dynamic Range | >5000:1 (typ.) |
| Signal-to-Noise Ratio | >450:1 (at full well, 1 s integration) |
| Stray Light | <0.05% (600 nm, relative to peak) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Instrument |
| Model | L14890-09 |
| Core Component | Pulsed Semiconductor QCL Source |
| Pulse Output Power (Max) | 900 mW |
| Pulse Repetition Frequency (Typ.) | 180 kHz |
| Integrated Collimating Lens | Yes |
| Dimensions (W × H × D) | 82 mm × 88 mm × 112 mm |
| Weight | 1.2 kg |
| Central Wavenumber (Typ.) | 1075 cm⁻¹ |
| Wavenumber Tuning Range (Typ.) | 200 cm⁻¹ |
| Tuning Mechanism | MEMS-based External Cavity |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | H13126_C12918 |
| Component Type | Optical Sensor Module |
| Output Interfaces | Digital (photon counting) + Analog (voltage) |
| Connectivity | USB 2.0 |
| Compliance | CE-marked (C12918-A1/A2/A3 variants for JP/US/EU markets) |
| Operating Temperature | 0 to +40 °C |
| Storage Temperature | −20 to +60 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported |
| Model | X-ray Flat Panel Detector |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | X10 |
| Component Category | Optical Element |
| Active Area | 16 × 12 mm |
| Wavelength Ranges | 400–700 nm, 410±10 nm, 510±50 nm, 620–1100 nm, 650±50 nm, 800±50 nm, 1000–1550 nm, 1050±50 nm |
| Diffraction Efficiency | 79–95% |
| Drive Interface | DVI from PC via CMOS backplane |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | X2D2 |
| Light Source Type | Continuous-wave Deuterium Arc Lamp |
| Illumination Mode | External Irradiation Configuration |
| Radiant Output Stability | <0.5% RMS over 8 hours |
| Typical Lifetime | ≥2,000 hours at rated current |
| Spectral Range | 190–400 nm (UV-Vis continuum) |
| UV Output Power (at 220 nm) | ≥1.2 mW/nm (collimated, 1 mrad divergence) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | L-Series |
| Light Source Type | Xenon Arc Lamp |
| Illumination Mode | External Irradiation |
| Spectral Range | 185 nm – 2000 nm (model-dependent, down to 220 nm or 240 nm with optional filtering) |
| Typical Power Ratings | 35 W, 75 W, 100 W, 150 W, 200–500 W |
| Lamp Architecture | Short-Arc or Long-Life Sealed-Quartz Envelope |
| Electrode Design | High-Performance Tungsten-Thoriated Cathode |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | μAMOS |
| Pricing | Upon Request |
| Laser Wavelength | 1.3 µm (standard), optional 1.1 µm pulsed or high-power 1.3 µm (>400 mW) |
| Spatial Resolution (Backside Imaging) | ≤0.26 µm (with 100× HR NIR objective) |
| Detection Method | Lock-in Amplified OBIRCH (Optical Beam Induced Resistance Change) |
| Voltage/Current Biasing | 4-Quadrant ±10 mV–±10 V / ±100 mA |
| Sample Compatibility | 200 mm / 300 mm wafers (front/backside), diced dies, packaged ICs with polished backside, EPI-substrates |
| Vacuum Requirement | ≥80 kPa |
| Compressed Air | 0.5–0.7 MPa |
| Power Supply | AC 220 V, 50/60 Hz, ~3000 W |
| Main Unit Dimensions | 1360 × 1410 × 2120 mm (W×D×H), ~900 kg |
| Control Console | 880 × 700 × 1542 mm, ~255 kg |