Hamamatsu
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| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | H7 |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | Phototube |
| Component Category | Optical Element |
| Compliance | RoHS-compliant, CE-marked for laboratory instrumentation use |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | R6800U-01 |
| Spectral Range | 185–350 nm |
| Peak Wavelength | 240 nm |
| Photocathode Material | Cesium Telluride (Cs-Te) |
| Window Material | Solar-Blind UV-Transmitting Glass |
| Photocathode Diameter | 8 mm (min.) |
| Envelope Diameter | 16 mm |
| Cathode Peak Current | 1.2 µA |
| Anode Supply Voltage (max) | 30 V |
| Avg. Cathode Current Density (max) | 5 µA/cm² |
| Avg. Cathode Current (max) | 0.4 µA |
| Operating Temperature | –80 to +50 °C |
| Radiant Sensitivity @ 254 nm (typ.) | 20 mA/W |
| Dark Current (max) | 1 pA |
| Recommended Operating Voltage | 15 V |
| Inter-Electrode Capacitance | 3 pF |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | PMA-12 Series |
| Spectral Range | 200 nm to 950 nm |
| Detector Type | Back-Thinned CCD Linear Array |
| Optical Design | Czerny-Turner |
| F-number | f/4 |
| Spectral Resolution | < 2 nm (verified with Hg/Ar emission lines) |
| Pixel Count | 1024 channels |
| Pixel Size | 24 µm |
| Active Sensor Area | 2.928 mm |
| Cooling Temperature | −15 °C |
| Read Noise | 16 electrons (rms) |
| Dark Current | 75 electrons/scan (at −15 °C, 20 ms integration) |
| Integration Time | 19 ms to 64 s |
| A/D Resolution | 16-bit |
| Input Fiber | Bundled fiber, φ1 mm core, φ12 mm stainless-steel sheath, 1.5 m length |
| Fiber Coupling | SMA 905 connector |
| Trigger Interface | TTL-compatible, high-impedance input |
| Data Interface | USB 2.0 |
| Power Supply | AC 100–240 V, 50/60 Hz |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Model | C10494-01 |
| Spectral Range | 200 nm to 950 nm |
| Detector Type | BT-CCD linear array sensor |
| Optical Resolution | 3 nm (FWHM) |
| Pixel Count | 2048 ch |
| Pixel Size | 12 µm × 972 µm |
| Read Noise | 100 electrons |
| Dark Current | 100 electrons/scan (at 25 °C, 100 µs integration) |
| Integration Time | 100 µs to 1 s |
| A/D Resolution | 12 bit |
| Optical Design | Czerny-Turner |
| f-number | f/4 |
| Fiber Type | Quartz optical fiber |
| Fiber Length | 1.5 m |
| Interface | Camera Link / USB 2.0 |
| Power Supply | AC 100–240 V, 50/60 Hz |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Instrument |
| Model | PMA-50 Series |
| Pricing | Available Upon Request |
| Wavelength Range (BT-CCD) | 200–1100 nm |
| Detector Channels (BT-CCD) | 1024 ch |
| Wavelength Range (InGaAs System 1) | 900–1700 nm |
| Detector Channels (InGaAs System 1) | 512 ch |
| Wavelength Range (InGaAs System 2) | 1200–2600 nm |
| Detector Channels (InGaAs System 2) | 256 ch |
| Optical Design | Czerny-Turner |
| Focal Length | 250 mm |
| f-number | f/4 |
| Linear Dispersion | 2.5 nm/mm (at 1200 gr/mm) |
| Grating Capacity | Up to 3 interchangeable gratings (50–1200 gr/mm) |
| Spectral Bandwidth | 61–737 nm (BT-CCD), 46–384 nm (InGaAs) |
| Spectral Resolution | 0.21–2.5 nm (BT-CCD), 0.23–2.0 nm (InGaAs System 1), 0.36–3.0 nm (InGaAs System 2) |
| Detector Cooling | −15 °C (BT-CCD), −10 °C (InGaAs Sys 1), −20 °C (InGaAs Sys 2) |
| Read Noise | 10 e⁻ (BT-CCD), 12,500 e⁻ (InGaAs) |
| Dark Current | 75 e⁻/scan (BT-CCD, −15 °C, 20 ms), 6750 e⁻/scan (InGaAs Sys 1, −10 °C, 5 ms), 6.25×10⁶ e⁻/scan (InGaAs Sys 2, −20 °C, 5 ms) |
| Integration Time | 5 ms – 64 s |
| A/D Resolution | 16 bit |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | R2R3 |
| Pricing | Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Instrumentation |
| Model Series | Quantaurus-Tau |
| Pricing | Available Upon Request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | UV Gas Discharge Tube Sensor |
| Spectral Range | 185–260 nm |
| Cathode Material | Nickel (Ni) |
| Operating Voltage (Recommended) | 325 ± 25 V DC |
| Average Discharge Current (Recommended) | 0.3 mA |
| Minimum Arc-Extinguishing Time | 2 ms |
| Typical Sensitivity | 5000 counts/min |
| Maximum Background Count Rate | 10 counts/min |
| Average Lifetime | 10,000 h |
| Weight | ~1.5 g |
| Operating Temperature Range | −0.3 °C to +50 °C |
| Starting Discharge Voltage | 280 V DC |
| Sustaining Discharge Voltage | 240 V DC |
| Max. Peak Current | 30 mA |
| Max. Average Discharge Current | 1 mA |
| Max. Supply Voltage | 400 V DC |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | RC Series |
| Spectral Range | 640–1050 nm |
| Detector Type | InGaAs-enhanced CMOS linear image sensor |
| Optical Resolution (FWHM, max) | 8 nm |
| Pixel Count | 256 pixels |
| Cooling | Uncooled |
| Operating Temperature | 25 °C (typ.) |
| Interface | Analog video output (composite CVBS) |
| Stray Light | <0.1% (typ., at 650 nm relative to peak) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Component Category | Optical Component |
| Sensor Architecture | CMOS Linear Array & Area Array |
| Package Types | Ceramic, Plastic, and Hermetic Options |
| Key Models | S11639, S12706, S11106, S11107, S8377-Q series, S8378-Q series, S10123-Q series, S10124-Q series, S10227-10, S11106-10, S11107-10, S11662 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S10108 |
| Component Category | Optical Sensor IC |
| Spectral Response Range | 320–820 nm |
| Peak Wavelength | 560 nm |
| Package Type | End-Window |
| Dark Current (max) | 50 nA |
| Photocurrent | 0.31 mA |
| Rise Time | 6000 µs |
| Fall Time | 2500 µs |
| Operating Temperature | Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S10121-128Q-01 |
| Component Type | Optical Detector Element |
| Pixel Count | 128 |
| Pixel Pitch | 50 µm |
| Pixel Height | 2.5 mm |
| Output Type | Current-Mode Analog Output |
| Spectral Range | UV-enhanced (190–1100 nm, peak responsivity in UV) |
| Integration Time | Programmable per-pixel |
| Power Consumption | Low-power self-scanning operation |
| Package | Ceramic DIP with quartz window |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Component Category | Optical Sensor |
| Sensor Architecture | Full-Frame & Interline Transfer CCD |
| Quantum Efficiency | Up to 95% (Back-Illuminated) |
| Fill Factor | 100% (FFT-CCD Technology) |
| Spectral Range | 200–1100 nm |
| Pixel Sizes | 12×12 µm, 14×14 µm, 14×200 µm, 14×500 µm, 14×1000 µm, 24×24 µm, 48×48 µm |
| Array Configurations | Linear (512–4096 px), Area (512×58 to 2048×64 px) |
| Frame Rates | 106–651 fps (area sensors) |
| Specialized Variants | TDI, IR-enhanced, deep-depletion, low-fringing, high-full-well-capacity, integrated electronic shutter |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S11510-1006 |
| Component Type | Optical Sensor |
| Quantum Efficiency | 40% @ 1000 nm |
| Active Area | 14.336 × 0.896 mm |
| Pixel Pitch | 14 µm |
| Pixel Count | 1024 × 64 |
| Pixel Size | 14 × 14 µm |
| Spectral Range | 200–1100 nm |
| Full-Well Capacity | 60 ke⁻ (typ.) |
| Dark Current | 50 e⁻/pixel/s (typ., Ta = 25 °C) |
| Read Noise | 6 e⁻ rms (typ.) |
| Frame Rate | 189.0 fps (full-line binning, typ.) |
| Package | Ceramic |
| MPP Operation Support | Yes |
| Compatible Driver Board | C11287 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12158-01CT |
| Package Type | Chip-on-Board (COB) Surface-Mount |
| Active Area | 2.77 × 2.77 mm |
| Spectral Range | 320–1100 nm |
| Peak Wavelength | 960 nm |
| Responsivity | 0.7 A/W @ 960 nm |
| Dark Current | 10 pA @ VR = 12 V |
| Reverse Voltage (Max) | 20 V |
| Cutoff Frequency | 25 MHz @ VR = 12 V |
| Junction Capacitance | 15 pF @ VR = 12 V |
| Operating Temperature | Ta = 25 °C (typical) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1223-01 |
| Component Type | Silicon Photodiode |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 320–1100 nm |
| Peak Wavelength | 960 nm |
| Responsivity | 0.52 A/W @ 780 nm |
| Dark Current | 10,000 pA @ VR = 20 V |
| Cutoff Frequency | 20 MHz @ VR = 20 V |
| Junction Capacitance | 20 pF @ VR = 20 V, f = 1 MHz |
| Maximum Reverse Voltage | 30 V |
| Package | TO-5 Metal Can |
| Operating Temperature | Ta = 25 °C (typical) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S13360 |
| Component Category | Optical Component |
| Packaging | Surface-Mount (SMD) or Ceramic Dual-In-Line (CDIP), Configurable per Application |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1337-66BQ |
| Component Type | Silicon Photodiode |
| Active Area | 5.8 × 5.8 mm² |
| Spectral Range | 190–1100 nm |
| Peak Wavelength (Typ.) | 960 nm |
| Responsivity (Typ.) | 0.5 A/W @ 960 nm |
| Quantum Efficiency | 75 % @ 200 nm |
| Dark Current (Max.) | 100 pA @ VR = 10 mV |
| Junction Capacitance (Typ.) | 380 pF @ VR = 0 V, f = 10 kHz |
| Rise Time (Typ.) | 1 µs @ VR = 0 V |
| Reverse Voltage (Max.) | 5 V |
| Package | Ceramic |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | S2–S5 Series |
| Component Category | Optical Sensor Element |
| Principle | Analog Position Sensing via Lateral Photoelectric Effect in Continuous Resistive Layer |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported |
| Models | L10671D (lamp), L10671P (power supply), L10671H (lamp housing) |
| Light Source Type | Continuous-wave deuterium lamp |
| Illumination Mode | External illumination |
| Stability | ±0.005% p-p (typical, equivalent to 2 × 10⁻⁵ A.U.) |
| Spectral Range | 190–400 nm (UV-Vis continuum) |
| Power Consumption | <15 W (lamp + driver, typical) |
| Lifetime | ≥2,000 hours (defined as time until 230 nm output drops to 50% of initial intensity or stability degrades beyond ±0.05% p-p) |
| Control Interface | TTL-compatible external trigger (±5 V, 200 ms toggle interval) |
| Cooling Requirement | Conduction-cooled only |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | S2D2 |
| Light Source Type | Continuous-wave Deuterium Arc Lamp |
| Illumination Mode | External (Side-Illuminating) Configuration |
| Physical Form Factor | Compact Benchtop Module |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S3 |
| Component Category | Optical Sensor Element |
| Pixel Options | 128, 256, 512, 1024, 2048 |
| Spectral Response Range (Min) | 200 nm |
| Pixel Pitch | 50 µm (standard), 25 µm (S3903 series) |
| Active Area Height | 0.5 mm or 2.5 mm |
| Spectral Cutoff (F-type) | 360 nm |
| Readout Rate (typ.) | 1950–15600 lines/s |
| Sensing Architecture | NMOS-based linear CCD-equivalent architecture with UV-optimized silicon photodiode array |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S4111-35Q |
| Element Size (per column) | 4.4 × 0.9 mm |
| Number of Elements | 35 |
| Package | Ceramic 40-pin DIP |
| Cooling Method | Non-cooled |
| Maximum Reverse Voltage | 15 V |
| Spectral Response Range | 190–1100 nm |
| Peak Responsivity Wavelength (typ.) | 960 nm |
| Responsivity (typ.) | 0.58 A/W at 960 nm |
| Dark Current (max.) | 10 pA per element at VR = 10 mV |
| Rise Time (typ.) | 1.2 μs at VR = 0 V |
| Junction Capacitance (typ.) | 550 pF at VR = 0 V |
| Operating Temperature | Typical Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4282-51 |
| Component Category | Optical Component |
| Package | Plastic, Transparent |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4404 |
| Component Category | Optical Component |
| Package | Plastic with Integrated Lens |
| Photocurrent (Typ., 5 V CE, 1 mW/cm² @ 870 nm) | 2.5 mA |
| Dark Current (Max., 5 V CE) | 100 nA |
| Collector–Emitter Voltage (Max.) | 0.4 V |
| Peak Spectral Response Wavelength | 870 nm |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4506 |
| Component Category | Optical Element |
| Output Type | Quadrature 2-phase (A/B), 90° phase shift |
| Package | Plastic DIP |
| Operating Temperature | −30 to +80 °C |
| Storage Temperature | −40 to +85 °C |
| Supply Voltage | 5 V (Vcc) |
| Logic Compatibility | TTL-level output |
| Photodetector Array | Integrated 4-element silicon photodiode array |
| Electrical Interface | Direct TTL connection without external amplification |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4810 |
| Component Category | Optical Component |
| Package | Plastic with Integrated Lens |
| Spectral Rejection | Visible-Light Shielded |
| Operating Voltage | Low-Voltage (Typ. 3.3–5 V DC) |
| Output Configuration | Open-Collector |
| Logic Polarity | High-Level Output on Illumination |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6428-01 / S6429-01 / S6430-01 |
| Component Category | Optical Sensor Element |
| Spectral Peak Wavelengths | 460 nm (blue), 540 nm (green), 660 nm (red) |
| Active Area | 2.8 × 2.4 mm² |
| Spectral Response Ranges | 400–540 nm (S6428-01), 480–600 nm (S6429-01), 590–720 nm (S6430-01) |
| Package | Molded Plastic Housing |
| Detector Material | Silicon Photodiode |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6841 |
| Component Category | Optical Component |
| Package | Surface-Mount Plastic (4.5 × 5.5 mm) |
| Output Type | Digital |
| Supply Voltage | 4.5–5.5 V |
| Spectral Response Range | 380–1120 nm |
| Threshold Illuminance | 0.05 µW/mm² |
| Maximum Permissible Ambient Illuminance | 5000 lx |
| Key Feature | High Sensitivity |