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Hangzhou New Force Optoelectronics Technology Co., Ltd.

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BrandPD-LD
OriginUSA
Component TypeOptical Element
Available ConfigurationsLensed VBG, Chirped VBG (Transverse & Longitudinal), Fixed-Reflectivity VBG, Variable-Reflectivity VBG
Center Wavelength Range400 nm – 2500 nm
Typical Center Wavelengths785 nm, 808 nm, 976 nm, 1064 nm
Wavelength Accuracy±0.5 nm
FWHM Line-width≤1.0 nm
Thermal Wavelength Drift≤0.01 nm/°C
Polarization Dependent Loss≤0.1 dB
Operating Temperature–40°C to +130°C
Storage Temperature–40°C to +130°C
Acceptance Angle±5°
Standard DimensionsSingle Emitter (1.5 mm × 2.0 mm), Diode Bar (1.5 mm × 15 mm), 2D Array (15 mm × 15 mm), Wafer Format (30 mm × 30 mm)
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OriginUSA
Supplier TypeAuthorized Distributor
Import StatusImported
ModelTHz Lenses
Component CategoryOptical Element
Substrate MaterialsHRFZ-Si (High-Resistivity Float-Zone Silicon), TPX (Polymethylpentene)
Lens TypesPlano-Convex, Bi-Convex, Positive Meniscus, Hyper-/Hypo-/Hemispherical, Bullet, Diffractive (Fresnel, Beam Divider)
Diameter Range2 mm to 150 mm
EFL Tolerance±1%
Surface Quality80/50 Scratch-Dig
Surface Accuracy±0.01 mm (spherical), variable for aspheric profiles
Clear Aperture≥90%
CoatingOptional Anti-Reflection (AR) Coating for 0.1–3 THz band
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BrandSemrock
OriginUSA
Manufacturer TypeAuthorized Distributor
Import StatusImported
Model SeriesRazorEdge® / EdgeBasic™
Warranty5 Years
Lead Time for Custom Orders7 Days
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BrandEdmund Optics
Modelnewopto
Detector TypesUV Si, Vis Si, NIR InGaAs, Extended InGaAs, PbS, PbSe
Spectral Ranges200–1000 nm (Si), 300–1000 nm (Si), 800–1600 nm (InGaAs), 800–1700 nm (InGaAs), 1000–1700 nm (InGaAs), 1200–2500 nm (InGaAs), 1200–2600 nm (InGaAs), 1000–2800 nm (PbS), 1000–4500 nm (PbSe)
Active Area Diameters1.0 mm, 2.0 mm, 2.5 mm, 3.0 mm, 5.0 mm, 10.0 mm, 11.0 mm
Cooling OptionsThermoelectric (TEC) cooling available
Output InterfaceAnalog voltage (0–5 V or ±5 V, configurable), compatible with oscilloscopes and DAQ systems
Integrated Pre-amplifierLow-noise, transimpedance design
ComplianceRoHS-compliant construction
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BrandNewOpto
ModelQP45-Q
Active Area6.7 × 6.7 mm²
Quadrant ConfigurationFour electrically isolated, radially symmetric photodiode segments separated by a narrow gap (≤20 µm)
Spectral RangeOptimized for 1064 nm (high-responsivity InGaAs or Si-based epitaxial structure)
Reverse BiasUp to 150 V
Dark Current≤3 nA per quadrant (at 150 V, 25°C)
Rise Time≤5 ns (50 Ω load)
PackageHermetically sealed TO-8S metal can with quartz window
Operating Temperature–10°C to +60°C
ComplianceRoHS-compliant, ISO 9001-manufactured components
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OriginRussia
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelTHz Mirrors
Price RangeUSD 1,400 – 7,000 (FOB)
Component CategoryOptical Element
MaterialFused Quartz
TypePlano-Plano
Dimensional Tolerance±0.25 mm
Clear Aperture≥90%
Surface Quality (Polished)40/20 Scratch-Dig
Surface Roughness (Ground Side)2.5 Ra (µm)
Surface Accuracyλ/2 @ 633 nm
CoatingProtected Gold
Gold Layer Thickness400 nm
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BrandNewOpto
Wavelength Range200–1100 nm
Core Diameter200 µm, 400 µm, 600 µm, or 1000 µm
Length2 m (custom lengths: 0.5 m / 1 m / 2 m)
Jacket MaterialPlastic or Metal-Braided
Connector TypeSMA905
Numerical Aperture~0.22 (typical for UV-grade silica fiber)
Operating Temperature−40 °C to +85 °C
ComplianceRoHS-compliant construction
Fiber TypeHigh-OH synthetic fused silica (UV-optimized)
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BrandFirst Sensor
OriginGermany
Model8AA0.4-9, 16AA0.13-9 (SOJ22GL & DIL18), 25AA0.04-9/25AA0.16-9 (BGA), 64AA0.04-9 (BGA), QA4000-9 (TO8Si)
Spectral Range760–910 nm
Quantum Efficiency>80%
Package TypesSOJ22GL, DIL18, BGA, TO8Si
Temperature CompensationNTC or PTC integrated
Element Count8, 16, 25 (5×5), 64 (8×8), Quadrant (4-element)
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OriginIsrael
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelSpotOn CCD Series
Component CategoryOptical Sensor Module
Spectral Range190–1550 nm
Position Accuracy±5 µm
Simultaneous Beam TrackingUp to 3 beams
Interface OptionsUSB 2.0 or PCI
Detector TypeMonochrome CCD sensor
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BrandNewOpto
ModelOff-Axis Parabolic Mirror
OriginZhejiang, China
Component CategoryOptical Element
CoatingProtected Aluminum (Al + SiO₂)
Surface Accuracyλ/4 @ 633 nm (typical)
Surface Quality20–10 scratch-dig
Clear Aperture≥90% of nominal diameter
Focal Length Range25 mm to 500 mm (custom available)
Off-Axis Distance5 mm to 150 mm (configurable)
Substrate MaterialFused Silica or BK7 (standard)
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BrandBATOP
OriginGermany
ModelSAM-1064-1-1ps-x
Component TypeOptical Element
Mounting OptionsUnmounted (450 µm thickness), Mounted (4 mm × 4 mm chip), or Fiber-Pigtailed (FC/PC or FC/APC)
Wavelength1064 nm
Saturation Fluence~1 µJ/cm² (typ.)
Recovery Time~1 ps
Reflectivity (HR)>99.9% at design wavelength
Cavity StructureAlAs/GaAs Bragg stack with low-temperature GaAs (LT-GaAs) saturable absorber layer
ComplianceRoHS-compliant, ISO 9001-manufactured wafers
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BrandNewOpto
TypeVolume Bragg Grating (Transmission)
Center Wavelengths375, 405, 658, 780, 785, 794.7, 808, 885, 920, 938, 976, 981, 1064, 1532, C-band (1530–1565 nm)
Wavelength Tolerance±0.5 nm
Wavelength Drift≤0.2 nm
FWHM Bandwidth0.03–1 nm
Thermal Coefficient0.01 nm/°C
Diffraction Efficiency5–98% (typical >99.9% for optimized designs)
Reflectivity Tolerance±5%
Grating Slant Angle<1° (customizable)
Standard Thickness0.3–3 mm
Custom Thickness Rangeup to 30 mm
Standard Aperture0.5–25 mm
Substrate MaterialPhoto-thermo-refractive (PTR) glass
Polarization SensitivityLow (designed for unpolarized or linearly polarized input)
Damage Threshold>5 J/cm² (ns pulses), >1 kW/cm² (CW, 1064 nm)
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BrandFirst Sensor
OriginGermany
Model64AA0.04-9
TypeAPD Array Evaluation Module for LIDAR Applications
Bandwidth125 MHz
PackageShielded OEM Module with PCB Integration
ComplianceRoHS, CE, ISO 9001 Certified Manufacturing
Supply Voltage±15 V DC
Operating Temperature Range−10 °C to +60 °C
Output InterfaceSMA coaxial (analog voltage)
HV Bias ControlIntegrated ultra-low-noise high-voltage source (±500 V, <7.5 mV ripple)
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BrandLinos
OriginGermany
Modelnewopto
Wavelength Range355–1064 nm
Expansion Ratio2×–8× (variable, manual or motorized)
Max. Input Beam Diameter (1/e² Gaussian)3.4–8 mm
Max. Output Beam Diameter31 mm
Number of Lens Elements4
Entrance Lens MaterialFused Silica (Quartz)
Mounting Diameter37.6 mm
ComplianceISO 10110 optical surface specifications, RoHS-compliant housing
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BrandThorlabs
OriginUSA
ModelNewOpto
Wavelength Range405 nm to 2000 nm
AR Coating Options395–415 nm, 350–700 nm, 600–1050 nm, 1050–1075 nm, 1050–1620 nm, 1.8–2.4 µm
Lens Diameter0.7–3.6 mm
Numerical Aperture (NA)0.15–0.60
Focal Length4.02–18.75 mm
Connector TypesFC/PC, FC/APC, SMA
ComplianceRoHS, ISO 9001-certified manufacturing
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BrandSemrock
OriginUSA
Component TypeHard-Coated Interference Filter
Mounting25 mm Diameter Aluminum Ring (Clear Aperture ≥ 21 mm)
ComplianceISO 9001 Manufacturing, RoHS Compliant
Warranty5-Year Limited Warranty
Customization Lead Time7 Business Days
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BrandSET / Sensor Electronic Technology
OriginUSA
ModelUV TOP Series
Component TypeUV Light Source
Spectral Range240–370 nm
Package OptionsTO-18, TO-39
Emission ConfigurationsFlat Window (120° full-angle divergence), Hemispherical Lens (7° full-angle quasi-collimated), Spherical Lens (focused + 7° quasi-collimated), Fiber-Coupled
Wavelength OptionsDiscrete peaks from 240 nm to 355 nm (e.g., 275 nm, 310 nm) with ceramic SMD variants available
Optical Power Output10 µW to 800 µW (varies by wavelength, package, and lens type)
Viewing Angle7° (collimated), 120° (broad emission)
ComplianceRoHS-compliant packaging, JEDEC-standard hermetic sealing for TO-can variants
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BrandFirst Sensor
OriginGermany
ModelSL21K-100k-A/GXX
Pressure Range100 kPa
Output Sensitivity40–70–130 mV @ 5 V excitation
TechnologySTARe (Sensor Technology for Advanced Resistors)
CategoryOptical Instrument Component
ComplianceRoHS, REACH, AEC-Q200 qualified (industrial variants)
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BrandFirst Sensor
Modelnewopto
TypeSilicon PIN Photodiode-Based Ionizing Radiation Detector
Active Area Range0.5–100 mm²
Dark Current0.005–5 nA (typ.)
Gamma Energy Threshold>1 keV (X0.5–γ to X10–γ)
Package OptionsTO-8S, TO-39, LCC10, CerPin
Spectral Response0.1–20 keV (Si absorption edge-dependent)
Depletion DepthFully depleted, 300–500 µm
Operating Temperature–20 °C to +50 °C
Bias Voltage–5 V to –100 V (reverse bias, model-dependent)
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BrandFirst Sensor
Modelnewopto
TypeWavelength-Sensitive Photodiode Array
PrincipleDepth-Dependent Absorption in Silicon
Dark Current≤10 nA (typ.)
Rise Time (Diode 1)≤10 ns
Rise Time (Diode 2)≤10,000 ns
Package OptionsTO-5, TO-5i, PCBA
Operating Voltage0–5 V
Load Resistor1 kΩ
Spectral Range400–1100 nm
ComplianceRoHS, CE
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OriginUSA
Manufacturer TypeDistributor
Origin CategoryImported
ModelscanDelay USB Optical Delay
Price RangeUSD $1,400 – $7,200 (est.)
Component CategoryOptical Element
Max. Scan Range15 ps (±1.125 mm) / 50 ps (±3.75 mm) / 150 ps (±11.25 mm)
Internal Generator Frequency0.1–20 Hz (15 ps & 50 ps models), 0.1–10 Hz (150 ps model)
Externally Triggered Frequency Range0.01–20 Hz (15 ps & 50 ps), 0.01–10 Hz (150 ps)
External Trigger InputTTL, 20 Hz – <50 kHz (optional fast frequency divider supports ~80 MHz input)
Trigger OutputTTL
Position Output Signal±10 V full scale per delay range
Linearity of Position Signal<0.5%
Computer InterfaceUSB 2.0
Clear Aperture1″ (15 ps), 1/2″ (50 ps & 150 ps)
Mirror CoatingProtected silver (standard)
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BrandFirst Sensor
Active Area Options3.5×1 mm² to 20×20 mm²
Spectral Response Peak865 nm
Operating Voltage10 V
Load Resistance50 Ω
Rise Time200 ns to 4000 ns
Package TypesSO8, SMD, SO16, CERpin, CERsmd, LCC10G
Axis ConfigurationSingle-axis and Dual-axis variants
MaterialSilicon-based PIN photodiode architecture
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OriginUSA
Manufacturer TypeAuthorized Distributor
Origin CategoryImported
ModelDeep UV Bandpass Filter
Price RangeUSD 140–420
Component CategoryOptical Element
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BrandCODIXX
OriginGermany
ModelcolorPol® Series
Component TypePolarizing Optical Element
Wavelength RangeUV (340–415 nm) to MIR (1500–5000 nm)
Contrast RatioUp to >100,000:1 (C5 grade)
Transmittance35–98% (wavelength- and variant-dependent)
Thickness200–280 µm (±50 µm tolerance)
Dimensions5×5 mm to 100×60 mm (custom sizes available)
Optional AR CoatingBroadband or laser-line optimized
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