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| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm with Z-axis motion |
| Microwave Frequency | 915 MHz |
| Max Microwave Power | 36 kW |
| Process Duration Capability | Up to 500 h (continuous) |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |
| Brand | AXIS-TEC |
|---|---|
| Origin | Singapore |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | AX-LS1000 |
| Maximum Linear Cutting Speed | 200 mm/s |
| Maximum Dicing Speed (YAG variant) | 140 mm/s |
| Maximum Dicing Speed (Semiconductor Laser variant) | 220 mm/s |
| Kerf Width | 30 µm |
| Cooling | Integrated Air-Cooling System |
| Configuration | T-Stage Dual-Station Platform |
| Laser Source Type | Fiber Laser (Standard), Optional YAG or Diode-Pumped Semiconductor Laser |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint detection |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based control with recipe management and audit trail logging |
| Brand | attocube |
|---|---|
| Origin | Germany |
| Model | attoCFM I |
| Instrument Type | Magnetic Force Microscope (MFM) / Cryogenic Confocal Microscope |
| Positioning Noise | < 0.5 nm |
| Sample Size Capacity | Ø100 mm |
| Sample Stage Travel Range | 150 µm (fine scan) / 5 × 5 × 5 mm³ (coarse positioning) |
| Temperature Range | 1.8 K – 300 K |
| Magnetic Field | Up to 12 T (vector magnet optional) |
| Vacuum Operation | 1 × 10⁻⁶ mbar – 1 atm |
| Numerical Aperture (NA) | 0.82 |
| Optical Resolution | ~550 nm (@635 nm) |
| Working Distance (WD) | 0.7 mm |
| Confocal Scan Range | 30 × 30 µm² @4 K |
| Compatible Cryostats | attoDRY1000/2100, Quantum Design PPMS (1″/2″ bore) |
| Expandable Modules | AFM/MFM/PFM/KPFM/ct-AFM/cryo-Raman |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ≤1.5% (across 8-inch wafer) |
| Dimensions | 78 × 56 × 28 cm |
| Thermal Wall | 300 °C aluminum heated chamber |
| Precursor Bottle Temp | up to 175 °C |
| Transport Line Temp | up to 200 °C |
| Plasma Option | ICP-based, 13.56 MHz, 300 W, air-cooled |
| MFC-Controlled Gas Lines | 4 (3 process gases + 1 carrier) |
| Vacuum Interface | Standard CF-40 flanges |
| Compatible Add-ons | In-situ ellipsometry, powder deposition module, load lock, QCM thickness monitor, ozone generator, heated sample stage (500 °C) |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Micro |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Size | 3-inch (76 mm) diameter or square |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Control Interface | Ethernet-connected PC-based software with full programmable ramp/soak profiles |
| Chamber Design | Dual-chamber option available |
| Cooling Method | Forced-air (low-noise, no compressed air required) + water-cooled quartz chamber walls |
| Heating Source | Array of IR halogen lamps with power-controlled (not voltage-controlled) regulation |
| Thermocouple Configuration | Dual N-type thermocouples — center + edge placement for direct wafer-temperature feedback |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) and needle-valve purging |
| Optional Accessories | SiC-coated graphite susceptor, molecular pump integration, cold-wall double-chamber architecture |
| Brand | Appsilon |
|---|---|
| Origin | Germany |
| Model | Appsilon MP |
| Deposition Principle | Microwave Plasma Chemical Vapor Deposition (MPCVD) |
| Substrate Compatibility | Ir / YSZ / Si (100 mm diameter) |
| Output Material | Free-standing single-crystal diamond wafers (Ø92 mm, 155 ct) |
| Crystal Orientations Available | 4p Geo A, 4p Geo B, 2p Type I, 2p Type II, seed crystals, custom geometries |
| Optical Tolerance | ±0.25 / –0.00 mm (standard), ±0.05 / –0.00 mm (optional) |
| Application Domain | Fourth-generation semiconductor development, optical components (ATR prisms), precision cutting tools, biomedical instruments |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | JetLight |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | Up to 3-inch (76 mm) diameter wafers |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Heating Source | Array of IR halogen lamps |
| Cooling Method | Forced-air (low-noise, no compressed air required) |
| Chamber Design | Cold-wall, water-cooled quartz chamber with dual stainless-steel enclosure |
| Control Interface | Ethernet-connected PC-based software with programmable ramp/soak profiles |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) |
| Optional Configurations | SiC-coated graphite susceptor, molecular pump integration, dual-chamber architecture |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Instrument Type | High-Vacuum Rapid Thermal Annealing (RTA) Furnace |
| Sample Diameter | 150 mm (6-inch wafer) |
| Temperature Range | Up to 1200 °C |
| Max. Ramp Rate | 160 K/s |
| Max. Cool-down Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Heating Source | Array of high-power infrared lamps (18 lamps, 34 kW total) |
| Temperature Measurement | Dual-range pyrometry (150–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time feedback loop |
| Compliance | Designed for GLP/GMP-aligned semiconductor R&D and pilot-line fabrication |
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤ 1 × 10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | Up to 4 MFC-controlled process lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7-inch HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | MILA-5000 |
| Instrument Type | General-Purpose Vacuum Rapid Thermal Annealer |
| Sample Size | 2-inch wafer |
| Temperature Range | 0–1200 °C |
| Max. Heating Rate | 150 K/s |
| Max. Cooling Rate | 200 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across sample surface |
| Atmosphere Options | Vacuum (down to 10⁻⁵ Pa for MILA-5000UHV variant), N₂, Ar, O₂, forming gas, ambient air |
| Heating Source | High-intensity infrared gold-coated halogen lamps |
| Cooling Method | Integrated water-cooled chamber base and forced convection |
| Control Interface | USB-connected PC software + front-panel programmable controller |
| Real-time Monitoring | Top-mounted quartz viewport with optional high-speed camera integration |
| Electrical Measurement Compatibility | Built-in 4-point probe interface for in-situ resistivity monitoring |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | Mini-PEM |
| Measurement Principle | Simultaneous electrical power output & heat flux quantification for η calculation |
| Compliance | ASTM D8251 (2022), ISO 14405-1, GLP-aligned thermal-electrical co-calibration protocol |
| Price Range | USD 82,000 – 163,000 (FOB Yokohama) |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | TCN-2ω |
| Measurement Principle | 2ω Lock-in Thermography (Frequency-Doubled Resistive Heating + Surface Thermal Reflectance Detection) |
| Temperature Range | Ambient (23 ± 2 °C) |
| Sample Dimensions | 10–20 mm (L) × 10 mm (W) × 0.3–1 mm (T, including substrate) |
| Substrate Materials | Si (recommended), Ge, Al₂O₃ |
| Metal Transducer Film | Au, 100 nm thick, 1.7 mm × 15 mm |
| Thermal Conductivity Range | 0.1–10 W·m⁻¹·K⁻¹ |
| Atmosphere | Ambient air |
| Compliance | ASTM E1461 (modified), ISO 22007-2 (principle-aligned), GLP-ready data traceability |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Premium |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6") / 200 mm (8") / 300 mm (12") wafers (configurable) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-Down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ hPa (with turbomolecular pump and load-lock) |
| Heating Configuration | Dual-side (top + bottom) halogen lamp array |
| Standard Temperature Sensors | Pyrometer (non-contact, real-time wafer surface monitoring) + Embedded thermocouple (susceptor reference) |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen interface |
| Programmable Recipes | Up to 50 stored profiles, each with up to 50 temperature/time/gas/vacuum segments |
| Gas Delivery | 4-channel MFC-controlled (N₂, Ar, O₂, forming gas, etc.) |
| Cooling | Water-cooled chamber + N₂ backside purge for substrate quenching |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-master |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 200 mm (8-inch wafers) |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Gas Lines | 4-channel MFC-controlled (N₂, Ar, O₂, custom mix) |
| Heating Source | Halogen infrared lamps with power-based regulation |
| Chamber | Water-cooled quartz tube with double-wall stainless-steel cold-wall construction |
| Temperature Monitoring | Dual K-type thermocouples + dual pyrometers (low-range: 150–1100 °C |
| high-range | 400–1500 °C) |
| Cooling Method | Forced-air (low-noise, no compressed air required for thermal cycling) |
| Control System | Digital PID with real-time feedback loop |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch wafers) |
| Temperature Range | Up to 1200 °C (standard), up to 1300 °C (optional high-temp configuration) |
| Max Heating Rate | 160 K/s |
| Max Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | 1 × 10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Lamp Configuration | 18 high-power infrared lamps (34 kW total) |
| Chamber Dimensions | Ø200 mm × 25 mm |
| Temperature Sensing | Dual-range pyrometry (400–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time thermal profiling |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | Angstrom |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | ELS5000 |
| Pricing | Upon Request |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Channels | 4–10 |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Uniformity | ≤1.5% (typical for AL₂O₃ on 4″ Si wafers) |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported Instrument |
| Model | LUMO |
| Pricing | Upon Request |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | RVL2000 |
| Pricing | Upon Request |
| Brand | Anasazi |
|---|---|
| Origin | USA |
| Model | EFT-60 |
| Operating Frequency | 60 MHz |
| Magnet Type | AlNiCo Permanent Magnet |
| Sample Form | Solid and Liquid (with appropriate probes) |
| Resolution (1H) | < 0.5 Hz |
| Sensitivity (1H) | < 0.001 mmol/L |
| Nuclei Supported | ¹H, ¹³C, ¹⁹F, ³¹P, ²³Na, ⁵⁹Co, ²⁹Si |
| Cryogen-Free Operation | Yes |
| Compliance | ASTM E2821, ISO/IEC 17025 (when operated under GLP conditions), FDA 21 CFR Part 11–ready software architecture |
| Brand | Anasazi |
|---|---|
| Origin | USA |
| Model | EFT-90 |
| Operating Frequency | 90 MHz |
| Sample Type | Solid & Liquid (with appropriate probes) |
| Magnet Type | AlNiCo permanent magnet |
| Resolution | < 0.5 Hz (for 1H at 90 MHz) |
| Sensitivity | < 0.001 mmol/L (for 1H) |
| Cooling | Zero-boil-off, helium-free operation |
| Compliance | Designed for GLP-compliant academic and industrial R&D environments |
| Software | EFT-NMR v5.x with full pulse sequence library and audit trail capability |
| Brand | Anasazi |
|---|---|
| Origin | USA |
| Model | EFT-60, EFT-90 |
| Operating Frequency | 60 MHz / 90 MHz |
| Sample Type | Liquid |
| Measurement Principle | Pulsed Fourier Transform NMR |
| Magnet Type | AlNiCo Permanent Magnet |
| Resolution (1H) | <0.5 Hz |
| Sensitivity | <0.001 mmol/L |
| Nuclei Supported | ¹H, ¹³C, ¹⁹F, ³¹P, ²³Na, ⁵⁹Co, ²⁹Si, and other quadrupolar/nuclear spin-½ nuclei |
| Compliance | ASTM E2874, ISO/IEC 17025-compatible operation, GLP-ready data audit trail |
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