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| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm with Z-axis motion |
| Microwave Frequency | 915 MHz |
| Max Microwave Power | 36 kW |
| Process Duration Capability | Up to 500 h (continuous) |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ≤1.5% (across 8-inch wafer) |
| Dimensions | 78 × 56 × 28 cm |
| Thermal Wall | 300 °C aluminum heated chamber |
| Precursor Bottle Temp | up to 175 °C |
| Transport Line Temp | up to 200 °C |
| Plasma Option | ICP-based, 13.56 MHz, 300 W, air-cooled |
| MFC-Controlled Gas Lines | 4 (3 process gases + 1 carrier) |
| Vacuum Interface | Standard CF-40 flanges |
| Compatible Add-ons | In-situ ellipsometry, powder deposition module, load lock, QCM thickness monitor, ozone generator, heated sample stage (500 °C) |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Channels | 4–10 |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Uniformity | ≤1.5% (typical for AL₂O₃ on 4″ Si wafers) |
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Equipment Type | Imported Semiconductor CVD System |
| Model | PECVD Series |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication, MEMS, III-V & Wide-Bandgap Devices (GaAs, SiC, CPV), LED, SOI, TSV |
| Brand | Picosun |
|---|---|
| Origin | Finland |
| Model | P-300B |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ±1.5% (1σ, across 8″ wafer or batch load) |
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