- All
- Favorite
- Popular
- Most rated
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Micro |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Size | 3-inch (76 mm) diameter or square |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Control Interface | Ethernet-connected PC-based software with full programmable ramp/soak profiles |
| Chamber Design | Dual-chamber option available |
| Cooling Method | Forced-air (low-noise, no compressed air required) + water-cooled quartz chamber walls |
| Heating Source | Array of IR halogen lamps with power-controlled (not voltage-controlled) regulation |
| Thermocouple Configuration | Dual N-type thermocouples — center + edge placement for direct wafer-temperature feedback |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) and needle-valve purging |
| Optional Accessories | SiC-coated graphite susceptor, molecular pump integration, cold-wall double-chamber architecture |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | JetLight |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | Up to 3-inch (76 mm) diameter wafers |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Heating Source | Array of IR halogen lamps |
| Cooling Method | Forced-air (low-noise, no compressed air required) |
| Chamber Design | Cold-wall, water-cooled quartz chamber with dual stainless-steel enclosure |
| Control Interface | Ethernet-connected PC-based software with programmable ramp/soak profiles |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) |
| Optional Configurations | SiC-coated graphite susceptor, molecular pump integration, dual-chamber architecture |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Instrument Type | High-Vacuum Rapid Thermal Annealing (RTA) Furnace |
| Sample Diameter | 150 mm (6-inch wafer) |
| Temperature Range | Up to 1200 °C |
| Max. Ramp Rate | 160 K/s |
| Max. Cool-down Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Heating Source | Array of high-power infrared lamps (18 lamps, 34 kW total) |
| Temperature Measurement | Dual-range pyrometry (150–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time feedback loop |
| Compliance | Designed for GLP/GMP-aligned semiconductor R&D and pilot-line fabrication |
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤ 1 × 10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | Up to 4 MFC-controlled process lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7-inch HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | MILA-5000 |
| Instrument Type | General-Purpose Vacuum Rapid Thermal Annealer |
| Sample Size | 2-inch wafer |
| Temperature Range | 0–1200 °C |
| Max. Heating Rate | 150 K/s |
| Max. Cooling Rate | 200 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across sample surface |
| Atmosphere Options | Vacuum (down to 10⁻⁵ Pa for MILA-5000UHV variant), N₂, Ar, O₂, forming gas, ambient air |
| Heating Source | High-intensity infrared gold-coated halogen lamps |
| Cooling Method | Integrated water-cooled chamber base and forced convection |
| Control Interface | USB-connected PC software + front-panel programmable controller |
| Real-time Monitoring | Top-mounted quartz viewport with optional high-speed camera integration |
| Electrical Measurement Compatibility | Built-in 4-point probe interface for in-situ resistivity monitoring |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Premium |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6") / 200 mm (8") / 300 mm (12") wafers (configurable) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-Down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ hPa (with turbomolecular pump and load-lock) |
| Heating Configuration | Dual-side (top + bottom) halogen lamp array |
| Standard Temperature Sensors | Pyrometer (non-contact, real-time wafer surface monitoring) + Embedded thermocouple (susceptor reference) |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen interface |
| Programmable Recipes | Up to 50 stored profiles, each with up to 50 temperature/time/gas/vacuum segments |
| Gas Delivery | 4-channel MFC-controlled (N₂, Ar, O₂, forming gas, etc.) |
| Cooling | Water-cooled chamber + N₂ backside purge for substrate quenching |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-master |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 200 mm (8-inch wafers) |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Gas Lines | 4-channel MFC-controlled (N₂, Ar, O₂, custom mix) |
| Heating Source | Halogen infrared lamps with power-based regulation |
| Chamber | Water-cooled quartz tube with double-wall stainless-steel cold-wall construction |
| Temperature Monitoring | Dual K-type thermocouples + dual pyrometers (low-range: 150–1100 °C |
| high-range | 400–1500 °C) |
| Cooling Method | Forced-air (low-noise, no compressed air required for thermal cycling) |
| Control System | Digital PID with real-time feedback loop |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch wafers) |
| Temperature Range | Up to 1200 °C (standard), up to 1300 °C (optional high-temp configuration) |
| Max Heating Rate | 160 K/s |
| Max Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | 1 × 10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Lamp Configuration | 18 high-power infrared lamps (34 kW total) |
| Chamber Dimensions | Ø200 mm × 25 mm |
| Temperature Sensing | Dual-range pyrometry (400–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time thermal profiling |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | UniTemp |
|---|---|
| Origin | Germany |
| Model | RTP-200-HV |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 200 mm (8-inch wafer) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top & bottom) |
| Cooling Method | Water-cooled chamber + N₂ purge for substrate |
| Gas Control | Up to 4 MFC-controlled lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen |
| Program Storage | 50 multi-segment recipes (up to 50 steps each) |
| Dimensions (W×D×H) | 505 × 504 × 420 mm |
| Weight | ~55 kg |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | Zenith-100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 6-inch (150 mm) |
| Temperature Range | 0–2000 °C |
| Maximum Heating Rate | 150 °C/s |
| Maximum Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Chamber Construction | Stainless steel, water-cooled cold-wall design |
| Standard Atmospheres | High vacuum, inert (N₂, Ar), reducing (H₂/N₂ mix) |
| Mandatory Pumping | Turbo-molecular pump required |
| Temperature Sensors | Dual-mode — calibrated pyrometer (for >600 °C) and type C thermocouple (for full range) |
| Control System | Digital PID with real-time feedback and ramp-soak profiling |
| Compliance | Designed for GLP-compliant R&D environments |
Show next