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| Brand | IBS |
|---|---|
| Origin | France |
| Model | FLEXion 200/400 |
| Product Type | Medium-Current Ion Implanter |
| Wafer Size Compatibility | 8-inch to 12-inch |
| Implant Energy Range | 50 keV (configurable down to 3 keV or up to 400–600 keV for multiply charged species) |
| Primary Implant Species | p⁺ (¹¹B, ³¹P, ⁷⁵As, etc.) |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% (1σ) across wafer under standard conditions |
| Vacuum | <7×10⁻⁷ mbar in beamline and target chamber |
| Gas Lines | 5 integrated (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder-end detection |
| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Quantum Device Manufacturing |
| Implantation Energy | 50 keV |
| Wafer Size Compatibility | 8–12 inch |
| Implant Species | p⁺ (H⁺, B⁺, As⁺, P⁺, etc.) |
| Ion Source Options | Liquid Metal Ion Source (LMIS) & Plasma Ion Source |
| Beam Current Range | sub-fA to ~100 pA |
| Detection Efficiency | ≥98% |
| Positional Accuracy | <20 nm (3σ) |
| Stage Resolution | ≤1 nm (closed-loop) |
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