Optical Laboratory Equipment
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| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Optical Component |
| Model | R10699 |
| Housing Type | Side-Window |
| Cathode Shape | Rectangular |
| Cathode Dimensions | 8 mm × 24 mm |
| Spectral Response Range | 185–900 nm |
| Short-Wavelength Cutoff | 185 nm |
| Long-Wavelength Cutoff | 900 nm |
| Spectral Response Curve Code | 557U |
| Red/White Ratio (R-68, typical) | 0.43 |
| Cathode Radiant Sensitivity (typ.) | 109 mA/W |
| Anode Luminous Sensitivity (min.) | 1600 A/lm |
| Anode Luminous Sensitivity (typ.) | 8500 A/lm |
| Anode Radiant Sensitivity (typ.) | 1.4 × 10⁶ A/W |
| Anode Gain (typ.) | 1.3 × 10⁷ |
| Anode Dark Current (30 min warm-up, typ.) | 2 nA |
| Anode Dark Current (30 min warm-up, max.) | 10 nA |
| Rise Time (typ.) | 2.2 ns |
| Transit Time (typ.) | 22 ns |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Optical Component |
| Model | H10682-210 |
| Photocathode Type | Ultra Bialkali (UBA) |
| Photocathode Shape | Round |
| Photocathode Diameter | 8 mm |
| Spectral Range | 230–700 nm |
| Peak Wavelength | 400 nm |
| Dimensions (W×H×D) | 22.0 × 36.0 × 40.0 mm |
| Operating Voltage | +4.75 to +5.25 V DC |
| Max Input Voltage | +6 V |
| Max Input Current | 40 mA |
| Count Sensitivity (300 nm) | 3.9 × 10⁵ s⁻¹·pW⁻¹ |
| Count Sensitivity (400 nm) | 6.1 × 10⁵ s⁻¹·pW⁻¹ |
| Count Sensitivity (500 nm) | 4.6 × 10⁵ s⁻¹·pW⁻¹ |
| Count Sensitivity (600 nm) | 1.3 × 10⁵ s⁻¹·pW⁻¹ |
| Count Sensitivity (700 nm) | 9.1 × 10³ s⁻¹·pW⁻¹ |
| Maximum Count Rate | 5.0 × 10⁶ s⁻¹ |
| Dark Count Rate (Typ.) | 50 s⁻¹ |
| Dark Count Rate (Max) | 100 s⁻¹ |
| Pulse Pair Resolution | 20 ns |
| Output Pulse Width | 10 ns |
| Min Output Pulse Height | +2 V |
| Typ. Output Pulse Height | +2.2 V |
| Recommended Load Resistance | 50 Ω |
| Output Logic | Positive |
| Operating Temperature | +5 to +40 °C |
| Storage Temperature | −20 to +50 °C |
| Weight | 47 g |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | Phototube |
| Component Category | Optical Element |
| Compliance | RoHS-compliant, CE-marked for laboratory instrumentation use |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer | Hamamatsu Photonics K.K. |
| Type | UV Gas Discharge Tube Sensor |
| Spectral Range | 185–260 nm |
| Cathode Material | Nickel (Ni) |
| Operating Voltage (Recommended) | 325 ± 25 V DC |
| Average Discharge Current (Recommended) | 0.3 mA |
| Minimum Arc-Extinguishing Time | 2 ms |
| Typical Sensitivity | 5000 counts/min |
| Maximum Background Count Rate | 10 counts/min |
| Average Lifetime | 10,000 h |
| Weight | ~1.5 g |
| Operating Temperature Range | −0.3 °C to +50 °C |
| Starting Discharge Voltage | 280 V DC |
| Sustaining Discharge Voltage | 240 V DC |
| Max. Peak Current | 30 mA |
| Max. Average Discharge Current | 1 mA |
| Max. Supply Voltage | 400 V DC |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Component Category | Optical Component |
| Sensor Architecture | CMOS Linear Array & Area Array |
| Package Types | Ceramic, Plastic, and Hermetic Options |
| Key Models | S11639, S12706, S11106, S11107, S8377-Q series, S8378-Q series, S10123-Q series, S10124-Q series, S10227-10, S11106-10, S11107-10, S11662 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S10108 |
| Component Category | Optical Sensor IC |
| Spectral Response Range | 320–820 nm |
| Peak Wavelength | 560 nm |
| Package Type | End-Window |
| Dark Current (max) | 50 nA |
| Photocurrent | 0.31 mA |
| Rise Time | 6000 µs |
| Fall Time | 2500 µs |
| Operating Temperature | Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S10121-128Q-01 |
| Component Type | Optical Detector Element |
| Pixel Count | 128 |
| Pixel Pitch | 50 µm |
| Pixel Height | 2.5 mm |
| Output Type | Current-Mode Analog Output |
| Spectral Range | UV-enhanced (190–1100 nm, peak responsivity in UV) |
| Integration Time | Programmable per-pixel |
| Power Consumption | Low-power self-scanning operation |
| Package | Ceramic DIP with quartz window |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Component Category | Optical Sensor |
| Sensor Architecture | Full-Frame & Interline Transfer CCD |
| Quantum Efficiency | Up to 95% (Back-Illuminated) |
| Fill Factor | 100% (FFT-CCD Technology) |
| Spectral Range | 200–1100 nm |
| Pixel Sizes | 12×12 µm, 14×14 µm, 14×200 µm, 14×500 µm, 14×1000 µm, 24×24 µm, 48×48 µm |
| Array Configurations | Linear (512–4096 px), Area (512×58 to 2048×64 px) |
| Frame Rates | 106–651 fps (area sensors) |
| Specialized Variants | TDI, IR-enhanced, deep-depletion, low-fringing, high-full-well-capacity, integrated electronic shutter |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S11510-1006 |
| Component Type | Optical Sensor |
| Quantum Efficiency | 40% @ 1000 nm |
| Active Area | 14.336 × 0.896 mm |
| Pixel Pitch | 14 µm |
| Pixel Count | 1024 × 64 |
| Pixel Size | 14 × 14 µm |
| Spectral Range | 200–1100 nm |
| Full-Well Capacity | 60 ke⁻ (typ.) |
| Dark Current | 50 e⁻/pixel/s (typ., Ta = 25 °C) |
| Read Noise | 6 e⁻ rms (typ.) |
| Frame Rate | 189.0 fps (full-line binning, typ.) |
| Package | Ceramic |
| MPP Operation Support | Yes |
| Compatible Driver Board | C11287 |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12158-01CT |
| Package Type | Chip-on-Board (COB) Surface-Mount |
| Active Area | 2.77 × 2.77 mm |
| Spectral Range | 320–1100 nm |
| Peak Wavelength | 960 nm |
| Responsivity | 0.7 A/W @ 960 nm |
| Dark Current | 10 pA @ VR = 12 V |
| Reverse Voltage (Max) | 20 V |
| Cutoff Frequency | 25 MHz @ VR = 12 V |
| Junction Capacitance | 15 pF @ VR = 12 V |
| Operating Temperature | Ta = 25 °C (typical) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1223-01 |
| Component Type | Silicon Photodiode |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 320–1100 nm |
| Peak Wavelength | 960 nm |
| Responsivity | 0.52 A/W @ 780 nm |
| Dark Current | 10,000 pA @ VR = 20 V |
| Cutoff Frequency | 20 MHz @ VR = 20 V |
| Junction Capacitance | 20 pF @ VR = 20 V, f = 1 MHz |
| Maximum Reverse Voltage | 30 V |
| Package | TO-5 Metal Can |
| Operating Temperature | Ta = 25 °C (typical) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S13360 |
| Component Category | Optical Component |
| Packaging | Surface-Mount (SMD) or Ceramic Dual-In-Line (CDIP), Configurable per Application |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S1337-66BQ |
| Component Type | Silicon Photodiode |
| Active Area | 5.8 × 5.8 mm² |
| Spectral Range | 190–1100 nm |
| Peak Wavelength (Typ.) | 960 nm |
| Responsivity (Typ.) | 0.5 A/W @ 960 nm |
| Quantum Efficiency | 75 % @ 200 nm |
| Dark Current (Max.) | 100 pA @ VR = 10 mV |
| Junction Capacitance (Typ.) | 380 pF @ VR = 0 V, f = 10 kHz |
| Rise Time (Typ.) | 1 µs @ VR = 0 V |
| Reverse Voltage (Max.) | 5 V |
| Package | Ceramic |
| Cooling | Non-cooled |
| Operating Temperature | –40 to +85 °C (Storage: –40 to +100 °C) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | S2–S5 Series |
| Component Category | Optical Sensor Element |
| Principle | Analog Position Sensing via Lateral Photoelectric Effect in Continuous Resistive Layer |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported |
| Models | L10671D (lamp), L10671P (power supply), L10671H (lamp housing) |
| Light Source Type | Continuous-wave deuterium lamp |
| Illumination Mode | External illumination |
| Stability | ±0.005% p-p (typical, equivalent to 2 × 10⁻⁵ A.U.) |
| Spectral Range | 190–400 nm (UV-Vis continuum) |
| Power Consumption | <15 W (lamp + driver, typical) |
| Lifetime | ≥2,000 hours (defined as time until 230 nm output drops to 50% of initial intensity or stability degrades beyond ±0.05% p-p) |
| Control Interface | TTL-compatible external trigger (±5 V, 200 ms toggle interval) |
| Cooling Requirement | Conduction-cooled only |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | S2D2 |
| Light Source Type | Continuous-wave Deuterium Arc Lamp |
| Illumination Mode | External (Side-Illuminating) Configuration |
| Physical Form Factor | Compact Benchtop Module |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S3 |
| Component Category | Optical Sensor Element |
| Pixel Options | 128, 256, 512, 1024, 2048 |
| Spectral Response Range (Min) | 200 nm |
| Pixel Pitch | 50 µm (standard), 25 µm (S3903 series) |
| Active Area Height | 0.5 mm or 2.5 mm |
| Spectral Cutoff (F-type) | 360 nm |
| Readout Rate (typ.) | 1950–15600 lines/s |
| Sensing Architecture | NMOS-based linear CCD-equivalent architecture with UV-optimized silicon photodiode array |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S4111-35Q |
| Element Size (per column) | 4.4 × 0.9 mm |
| Number of Elements | 35 |
| Package | Ceramic 40-pin DIP |
| Cooling Method | Non-cooled |
| Maximum Reverse Voltage | 15 V |
| Spectral Response Range | 190–1100 nm |
| Peak Responsivity Wavelength (typ.) | 960 nm |
| Responsivity (typ.) | 0.58 A/W at 960 nm |
| Dark Current (max.) | 10 pA per element at VR = 10 mV |
| Rise Time (typ.) | 1.2 μs at VR = 0 V |
| Junction Capacitance (typ.) | 550 pF at VR = 0 V |
| Operating Temperature | Typical Ta = 25 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4282-51 |
| Component Category | Optical Component |
| Package | Plastic, Transparent |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4404 |
| Component Category | Optical Component |
| Package | Plastic with Integrated Lens |
| Photocurrent (Typ., 5 V CE, 1 mW/cm² @ 870 nm) | 2.5 mA |
| Dark Current (Max., 5 V CE) | 100 nA |
| Collector–Emitter Voltage (Max.) | 0.4 V |
| Peak Spectral Response Wavelength | 870 nm |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4506 |
| Component Category | Optical Element |
| Output Type | Quadrature 2-phase (A/B), 90° phase shift |
| Package | Plastic DIP |
| Operating Temperature | −30 to +80 °C |
| Storage Temperature | −40 to +85 °C |
| Supply Voltage | 5 V (Vcc) |
| Logic Compatibility | TTL-level output |
| Photodetector Array | Integrated 4-element silicon photodiode array |
| Electrical Interface | Direct TTL connection without external amplification |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S4810 |
| Component Category | Optical Component |
| Package | Plastic with Integrated Lens |
| Spectral Rejection | Visible-Light Shielded |
| Operating Voltage | Low-Voltage (Typ. 3.3–5 V DC) |
| Output Configuration | Open-Collector |
| Logic Polarity | High-Level Output on Illumination |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6428-01 / S6429-01 / S6430-01 |
| Component Category | Optical Sensor Element |
| Spectral Peak Wavelengths | 460 nm (blue), 540 nm (green), 660 nm (red) |
| Active Area | 2.8 × 2.4 mm² |
| Spectral Response Ranges | 400–540 nm (S6428-01), 480–600 nm (S6429-01), 590–720 nm (S6430-01) |
| Package | Molded Plastic Housing |
| Detector Material | Silicon Photodiode |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S6841 |
| Component Category | Optical Component |
| Package | Surface-Mount Plastic (4.5 × 5.5 mm) |
| Output Type | Digital |
| Supply Voltage | 4.5–5.5 V |
| Spectral Response Range | 380–1120 nm |
| Threshold Illuminance | 0.05 µW/mm² |
| Maximum Permissible Ambient Illuminance | 5000 lx |
| Key Feature | High Sensitivity |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S8550-02 |
| Component Category | Optical Component |
| Type | Short-Wavelength Silicon Avalanche Photodiode Array (4 × 8 pixels) |
| Active Area per Pixel | 1.6 × 1.6 mm |
| Package | Ceramic |
| Peak Wavelength (Typ.) | 600 nm |
| Spectral Response Range (Min.) | 320–1000 nm |
| Dark Current (Max.) | 10 nA |
| Cutoff Frequency (Typ.) | 250 MHz |
| Junction Capacitance (Typ.) | 9 pF |
| Breakdown Voltage (Typ.) | 400 V |
| Temperature Coefficient of Breakdown Voltage (Typ.) | 0.78 V/°C |
| Gain (Typ.) | 50 |
| Operating Temperature | −40 to +85 °C |
| Test Condition | Ta = 25 °C, unless otherwise specified |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S9 |
| Component Category | Optical Sensor ICs |
| Spectral Response Range | 300–820 nm (standard photopic), up to 1000 nm (IR-enhanced variants) |
| Peak Wavelength | 560 nm (standard), 550–650 nm (model-dependent) |
| Output Type | Analog current (0.11–1.8 mA), digital CMOS (S9705) |
| Operating Temperature | –40 °C to +100 °C (S11153-01MT) |
| Human Eye Spectral Match | CIE 1931 Photopic Luminosity Function compliant |
| IR Immunity | Enhanced rejection of 850–950 nm remote-control interference |
| Color-Temperature Stability | < ±3% output variation across 2700 K–6500 K white-light sources |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Range | S9684, S9703-10/11, S10317-01, S11257-01DT/02DT, S11282-01DS |
| Component Category | Optical Sensor ICs |
| Package Type | Surface-Mount Device (SMD) |
| Pixel Count | 1 or 2 active photodiode elements |
| Operating Mode | Low-Voltage Operation (≤3.3 V) or Standard Operation (5 V) |
| Transimpedance Gain Options | 6× or 20× current amplification |
| Laser Power Compatibility | Optimized for low-power visible-to-NIR laser beams (e.g., 635–780 nm) |
| Compliance | RoHS-compliant, AEC-Q200 qualified variants available upon request |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model | S910 |
| Component Category | Optical Component |
| Package Type | Plastic Molded Housing |
| Photodiode Configuration | Triple-channel (R, G, B) Silicon Photodiodes |
| Spectral Response (Typ.) | Blue Channel: 400–540 nm |
| Green Channel | 480–600 nm |
| Red Channel | 590–720 nm |
| Active Area | 1.0 × 1.0 mm² |
| Interface | Analog Output (Voltage or Current Proportional to Illuminance per Channel) |
| Operating Temperature | −10 °C to +60 °C |
| Storage Temperature | −40 °C to +85 °C |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Import Status | Imported |
| Model Series | S |
| Component Category | Optical Component |
| Spectral Range | 200–1150 nm |
| Active Area Options | Ø0.2 to Ø10 mm |
| Package Types | Metal, Ceramic, Plastic |
| Typical Gain | 50–200 (bias-dependent) |
| Rise Time | <0.5 ns to ~15 ns (model-dependent) |
| Breakdown Voltage | 120–400 V |
| Capacitance | As low as 0.12 pF (S8664-02K) |
| Bandwidth | Up to 700 MHz (S8664-02K) |
| Brand | Hamamatsu |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported Optical Component |
| Model | S12742-220 |
| Component Type | UV-Specific Photodetector |
| Active Area | 3.6 × 3.6 mm² |
| Spectral Range | 216–224 nm (FWHM ≈ 10 nm) |
| Peak Wavelength (typ.) | 220 nm |
| Responsivity (typ.) | 0.006 A/W @ 220 nm |
| Dark Current (max.) | 25 pA @ VR = 10 mV |
| Reverse Voltage (max.) | 5 V |
| Rise Time (typ.) | 1 µs |
| Junction Capacitance (typ.) | 500 pF @ VR = 0 V, f = 10 kHz |
| Package | Hermetically Sealed Metal Can |
| Cooling | Non-cooled |
| Operating Temperature | Typical at Ta = 25 °C |