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| Brand | ATI |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Instrument |
| Model | WIS-1000 |
| Instrument Type | Optical Patterned Wafer Defect Inspection System |
| Target Applications | Semiconductor Front-End Process Monitoring |
| Process Node Support | Sub-28 nm FinFET and FD-SOI Technologies |
| Compatible Wafer Sizes | 200 mm and 300 mm |
| Throughput | Up to 120 wafers per hour (depending on inspection recipe and defect density) |
| Optical Resolution | ≤ 150 nm (at λ = 405 nm, high-NA dark-field imaging) |
| Defect Detection Sensitivity | ≥ 95% for ≥ 80 nm particles and ≥ 120 nm pattern bridging/bridging defects on metal and dielectric layers |
| Compliance | ISO 9001-certified manufacturing |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | Twinscan NXT:1980Di |
| Light Source | ArF Excimer Laser (193 nm) |
| Numerical Aperture (NA) | 1.35 |
| Resolution (single-exposure) | ≤38 nm |
| Overlay Accuracy | <1.5 nm (3σ) |
| Throughput | 275 wafers per hour (300 mm) |
| Platform Architecture | NXT3 |
| Immersion Technology | Water-based liquid immersion |
| Compliance | SEMI S2/S8, ISO 14644-1 Class 1 Cleanroom Compatible |
| Software Interface | TWINSCAN Control System (TCS) v5.x with integrated metrology feedback loops |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Type | Mask Aligner / Stepper / Scanner |
| Technology | EUV (13.5 nm) and DUV (193 nm ArFi, 248 nm KrF, 365 nm i-line) |
| Numerical Aperture (NA) | 0.75–0.55 |
| Resolution | ≤8 nm (High-NA EUV) to ≤220 nm (i-line) |
| Overlay Accuracy | ≤1.1 nm (NXE:3800E) |
| Throughput | 160–350 wafers/hour (300 mm) |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 certified, compatible with 21 CFR Part 11 audit trails via integrated metrology interfaces |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | 1460K |
| Type | Contact/Proximity Mask Aligner |
| Application | R&D and low-volume semiconductor prototyping, MEMS, microfluidics, academic cleanroom fabrication |
| Brand | Appsilon |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | MPCVD |
| Heating Method | Microwave Plasma Excitation |
| Application Domain | Semiconductor & Advanced Materials Research |
| Deposition Rate | Configurable per process recipe (typical range: 0.1–10 µm/h for diamond) |
| Process Gases | H₂, CH₄, N₂, O₂, Ar (gas mixing and mass flow control standard) |
| Deposited Films | Single-crystal & polycrystalline diamond, doped diamond (B/N/Si), diamond-like carbon (DLC), SiC, AlN |
| Base Vacuum | ≤5 × 10⁻⁷ mbar (with turbomolecular pumping system) |
| Operating Pressure Range | 10–200 mbar (microwave-coupled plasma stable across full range) |
| Chamber Internal Dimensions | Ø200 mm × 300 mm (standard configuration |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | HT-RTA59HD |
| Instrument Type | High-Vacuum Rapid Thermal Annealer (RTA) |
| Sample Size | 15 mm × 15 mm × 1 mm |
| Temperature Range | Ambient to 1800 °C |
| Max Heating Rate | ≥1500 °C/s (typical for 15 mm × 15 mm SiC wafer) |
| Cooling Method | Optional integrated water-quench (CAS-59AQ variant) |
| Heating Source | High-power focused infrared halogen lamps |
| Atmosphere Options | Vacuum (≤10⁻⁴ Pa), inert gas (N₂, Ar), or oxidizing (O₂) |
| Thermocouple Compatibility | JIS B standard sheathed thermocouples (W–Re optional) |
| Chamber Liner Material | High-purity alumina or graphite |
| Control Interface | USB-connected PC-based temperature programming and real-time thermal monitoring |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Max Temperature | up to 1450°C (100HT version) |
| Max Ramp Rate | up to 200°C/s |
| Vacuum Capability | High vacuum (base pressure <1×10⁻⁶ mbar with optional turbo pump) |
| Cooling | Forced gas quench or passive cooling |
| Control | Dual-sensor (thermocouple + pyrometer), digital PID, Ethernet-enabled PC interface |
| Gas Lines | Up to 5 independent channels with digital mass flow controllers (MFCs) |
| Chamber | Stainless steel cold-wall design with infrared halogen tubular lamps |
| Substrate Compatibility | Ø50–300 mm wafers and non-standard substrates (glass, metal, polymer, graphite, SiC susceptors) |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | AML |
|---|---|
| Origin | United Kingdom |
| Model | AWB-04, AWB-08, ROCK-04, ROCK-08 |
| Application | In-situ alignment, surface activation, wafer bonding, and nanoimprint lithography (NIL) |
| Compliance | Designed for Class 100 cleanroom integration |
| Control Architecture | Motorized precision stages with sub-micron alignment repeatability |
| Vacuum Compatibility | <5×10⁻⁶ mbar base pressure |
| Thermal Bonding Range | Ambient to 500 °C |
| Alignment Accuracy | ≤±25 nm (3σ, optical auto-alignment mode) |
| NIL Capability | Compatible with rigid and soft stamps |
| Brand | JEOL |
|---|---|
| Origin | Japan |
| Model | JBX-9500FS |
| Acceleration Voltage | 100 kV |
| Maximum Substrate Size | 300 mm Ø wafers or 6-inch masks |
| Maximum Field Size | 1000 µm × 1000 µm |
| Stage Travel Range | 260 mm × 240 mm |
| Minimum Positioning Unit (LBC) | 0.15 nm (λ/4096) |
| Overlay Accuracy | ≤ ±11 nm |
| Field Stitching Accuracy | ≤ ±10 nm |
| In-Field Placement Accuracy | ≤ ±9 nm |
| Position DAC Resolution | 20-bit |
| Scan DAC Resolution | 14-bit |
| Scan Step Size | 0.25 nm |
| Maximum Scan Rate | 100 MHz |
| Electron Source | ZrO/W Schottky Emitter |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | PlasmaPro 800 RIE |
| Category | Dry Process Equipment for Semiconductor Fabrication |
| Etching Principle | Reactive Ion Etching (RIE) with optional Plasma Enhanced (PE) mode |
| Substrate Compatibility | Up to 300 mm wafers and batch processing |
| Electrode Configuration | Large-area lower electrode with liquid cooling and/or resistive heating |
| Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) |
| Gas Delivery | Configurable gas cabinet with 4-, 8-, or 12-channel options |
| Vacuum System | Proximal turbomolecular pumping |
| Temperature Control | Precision substrate temperature regulation (±0.5 °C typical stability) |
| Compliance | Designed for GLP/GMP-aligned process documentation |
| Brand | SENTECH (Germany) |
|---|---|
| Origin | Germany |
| Model | Etchlab 200 |
| RF Power | 600 W @ 13.56 MHz |
| Vacuum System | 360 L/s Turbo-Molecular Pump + Rotary Vane Backing Pump |
| Wafer Capacity | Up to 200 mm (8-inch) |
| Gas Inlets | 2–12 Configurable Lines |
| Chamber Access | Top-Opening Lid Design |
| Footprint | Compact Benchtop Layout |
| Optional Add-ons | Residual Gas Analyzer (RGA), Optical Emission Spectroscopy (OES), Sample Temperature Control (SLI), High-Vacuum Pressure Monitoring (TP) |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | MDPspot |
| Type | Contactless, Microwave Photoconductance Decay (μ-PCD) Based Lifetime Tester |
| Sample Handling | Manual Z-axis adjustment (up to 156 mm height) |
| Measurement Mode | Single-point, non-contact, room-temperature operation |
| Material Compatibility | Crystalline and multicrystalline silicon wafers & bricks |
| Compliance | Designed for R&D and process monitoring in PV and semiconductor fabrication environments |
| Software | MDP Control Suite (Windows-based, real-time visualization, CSV export, GLP-compliant data logging) |
| Brand | AML |
|---|---|
| Origin | United Kingdom |
| Model | AWB-04 & AWB-08 Platform |
| Vacuum Base Pressure | ≤1×10⁻⁶ mbar |
| Maximum Bonding Force | 40 kN |
| Maximum Temperature | 560 °C |
| Anodic Bonding Voltage | 0–2.5 kV DC (up to 40 mA) |
| Alignment Accuracy | ±1 µm (in-situ, hot or cold) |
| Compatible Wafer Sizes | 2″, 3″, 4″, 5″, 6″, and 8″ |
| Bonding Environments | High vacuum, UHV (optional), controlled process gas (e.g., forming gas), or atmospheric inert gas |
| Optical System | Dual CCD microscope with through-the-lens illumination, visible + infrared imaging, real-time side-by-side wafer alignment display |
| Control Architecture | Fully automated PC-based system with recipe-driven operation, full parameter logging (voltage, current, integrated charge, temperature, pressure, force, separation, event timestamps), SPC-compliant data export, and remote diagnostic capability via secure network interface |
| Brand | Tops |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | TL-1 EX, TL-1 Plus |
| Laser Source | Pulsed Fiber Laser (Nd:YAG, 1064 nm) |
| Operation Mode | Q-switched Pulsed |
| Laser Pulse Width | Nanosecond Range |
| Beam Delivery | Precision Galvo Scanning System |
| Safety Class | Class 4 Laser Product (IEC 60825-1) |
| Compliance | CE, RoHS, FDA 21 CFR Part 1040.10 |
| Brand | PancanNano |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | SII |
| Product Type | High-Energy Single-Ion Implanter |
| Application Domain | IC & Quantum Device Fabrication |
| Implantation Energy | Custom-configurable per ion species (e.g., 1–100 keV) |
| Ion Dose Range | 1 to 10⁶ ions per site (single-ion counting mode) |
| Wafer Compatibility | Up to 150 mm (6″) substrates, compatible with diced chips and bulk crystals |
| Supported Ions | H⁺, N⁺, O⁺, Si⁺, P⁺, B⁺, As⁺, Te⁺, Ar⁺ (and other singly charged species via optional source modules) |
| Dimensions (L × W × H) | 2.4 m × 1.8 m × 2.2 m (fully shielded vacuum enclosure) |
| Brand | ULVAC KIKO |
|---|---|
| Origin | Japan |
| Model | CS-200Z |
| Configuration | Load-lock type, high-vacuum DC/RF magnetron sputtering system |
| Substrate Compatibility | Ti trays for Φ2″–Φ4″ wafers (max. Φ320 mm) and custom-shaped substrates (e.g., 50×50 mm²) |
| Control System | ULVAC GPCS-2700 integrated PLC + PC-based HMI (English interface) |
| Data Logging | Real-time parameter logging to PC with Excel export capability |
| Footprint | 1500 × 4500 mm (including service clearance) |
| Environment | Designed for Class 100–Class 1000 cleanroom integration |
| Brand | WUXI CAS PHOTONICS INC |
|---|---|
| Origin | Sichuan, China |
| Model | URE-2000S/25A |
| Exposure Area | 6-inch wafer |
| Exposure Wavelength | 365 nm (i-line) |
| Irradiance | >25 mW/cm² |
| Resolution | 1 µm |
| Alignment Accuracy | ±2 µm (double-side, 0.8 mm substrate thickness), ±0.8 µm (single-side) |
| Illumination Uniformity | ≤2.5% (Φ100 mm), ≤4% (Φ150 mm) |
| Mask-to-Wafer Motion Range | X: ±5 mm, Y: ±5 mm, Θ: ±6° |
| Mercury Lamp | 350 W DC, imported (OSRAM) |
| Collimation Angle | 3.5° |
| Maximum Photoresist Thickness | 350 µm (SU-8, under specified process conditions) |
| Dimensions (L×W×H) | 1300 × 900 × 1800 mm |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Product Category | Mask Aligner / Stepper-Based Lithography System for Semiconductor Fabrication |
| Models | TWINSCAN XT:1900Gi, XT:2000i, NXT:1980Di, NXT:2050i, NXE:3400B/C, NXE:3600D, EXE:5000 Series |
| Light Source Wavelengths | 248 nm (KrF), 193 nm (ArF dry & immersion), 13.5 nm (EUV) |
| Single-Exposure Resolution | 38 nm (ArF immersion), 13 nm (EUV, NA=0.33), 8 nm (High-NA EUV, NA=0.55) |
| Throughput | Up to 275 wafers/hour (NXT:2050i), ~170 wafers/day (NXE:3400C), target 220 wafers/day (EXE:5000) |
| Supported Process Nodes | 28 nm to sub-2 nm |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 safety standards, compatible with 300 mm wafer handling automation (SECS/GEM) |
| Brand | Netzsch |
|---|---|
| Origin | Germany |
| Model | DSC 214 Polyma |
| Temperature Range | −100 °C to 600 °C |
| Heating/Cooling Rate | up to 500 °C/min |
| Sensor Type | Corona® high-reproducibility heat-flux sensor |
| Crucible System | Concavus® concave-bottom crucibles with fixed annular contact geometry |
| Software Platform | Proteus® with Smart Mode, Expert Mode, TM-DSC, Beflat® baseline correction, Auto-Analysis, Identify™ polymer recognition database |
| Compliance | ISO 11357-1, ASTM E794, ASTM E1356, USP <1151>, GLP/GMP-ready audit trail (FDA 21 CFR Part 11 optional) |
| Brand | Nanoscribe |
|---|---|
| Country of Origin | Germany |
| Model | Photonic Professional GT2 |
| Category | Two-Photon Polymerization (TPP) Microfabrication System |
| Automation Level | Fully Automated |
| User Interface | Intuitive Graphical Workflow Environment |
| Compliance Framework | Designed for ISO 14644-1 Class 5 cleanroom integration |
| Software Architecture | Windows-based, FDA 21 CFR Part 11–ready audit trail support (optional configuration) |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SI 500 D |
| Plasma Source | Planar Triple-Spiral Antenna (PTSA) |
| Substrate Temperature Range | RT to +350 °C |
| Vacuum System | Fully Integrated, High-Stability |
| Process Compatibility | SiO₂, SiNₓ, SiONₓ, a-Si, SiC, TEOS-derived films |
| Substrate Size | Up to 200 mm wafers or carrier-mounted substrates |
| Optional Features | Load-lock integration, Laser Endpoint Detection, Substrate Biasing, He-backside Cooling with Real-Time Backside Temperature Sensing |
| Control Architecture | SENTECH Fieldbus-Based SCADA Software with Audit-Trail-Capable UI |
| Compliance Context | Designed for GLP/GMP-aligned R&D and pilot-line fabrication |
| Brand | Raith |
|---|---|
| Origin | Germany |
| Model | Pioneer Two |
| Electron Source | Thermal Field Emission Gun |
| Accelerating Voltage Range | 20 V – 30 kV |
| Minimum Guaranteed Resolution (Line Width) | ≤8 nm |
| Stage Travel (X/Y/Z) | 50 mm × 50 mm × 25 mm |
| XY Positioning Accuracy | ±2 nm |
| Overlay/Pattern Stitching Accuracy | ≤50 nm |
| Imaging Magnification Range | 20× – 1,000,000× |
| Optional Add-ons | Backscattered Electron Detector (BSED), Energy-Dispersive X-ray Spectrometer (EDS), Tilt-Rotation Stage Module |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | Plasmalab System 100 |
| Wafer Handling | Up to 200 mm (8") single-wafer or batch (6 × 50 mm), cassette-to-cassette transfer via load-lock chamber |
| Substrate Temperature Range | –150 °C to +700 °C |
| Gas Delivery | Optional 6- or 12-channel gas manifold (remotely mounted) |
| In-situ Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) compatible |
| Integration Capability | Cluster tool ready with robotic wafer handling |
| Process Flexibility | Reactive ion etching (RIE), inductively coupled plasma (ICP), electron cyclotron resonance (ECR), and plasma-enhanced chemical vapor deposition (PECVD) modes |
| Brand | MicroChem Corp |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Line | AZ1500 Series |
| Solvent System | Propylene Glycol Monomethyl Ether Acetate (PGMEA) |
| UV Sensitivity Range | 310–440 nm (i-, h-, g-line) |
| Recommended Development Time | AZ1500/AZ1514H: 50–60 s |
| AZ1500HS | 20–30 s |
| Compatible Developers | AZ 351B (1:4 dilution), 0.5% NaOH, AZ 726MIF |
| Film Thickness Range | 0.5–4.0 μm (spin-coated) |
| Storage Conditions | 0–25°C, sealed container, light-protected |
| Shelf Life | Batch-specific (see label: YYYY/MM/DD) |
| Compliance | Fully compatible with standard semiconductor cleanroom protocols and ISO Class 5–7 environments |
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