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| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | PlasmaPro 800 RIE |
| Category | Dry Process Equipment for Semiconductor Fabrication |
| Etching Principle | Reactive Ion Etching (RIE) with optional Plasma Enhanced (PE) mode |
| Substrate Compatibility | Up to 300 mm wafers and batch processing |
| Electrode Configuration | Large-area lower electrode with liquid cooling and/or resistive heating |
| Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) |
| Gas Delivery | Configurable gas cabinet with 4-, 8-, or 12-channel options |
| Vacuum System | Proximal turbomolecular pumping |
| Temperature Control | Precision substrate temperature regulation (±0.5 °C typical stability) |
| Compliance | Designed for GLP/GMP-aligned process documentation |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SI 500 D |
| Plasma Source | Planar Triple-Spiral Antenna (PTSA) |
| Substrate Temperature Range | RT to +350 °C |
| Vacuum System | Fully Integrated, High-Stability |
| Process Compatibility | SiO₂, SiNₓ, SiONₓ, a-Si, SiC, TEOS-derived films |
| Substrate Size | Up to 200 mm wafers or carrier-mounted substrates |
| Optional Features | Load-lock integration, Laser Endpoint Detection, Substrate Biasing, He-backside Cooling with Real-Time Backside Temperature Sensing |
| Control Architecture | SENTECH Fieldbus-Based SCADA Software with Audit-Trail-Capable UI |
| Compliance Context | Designed for GLP/GMP-aligned R&D and pilot-line fabrication |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | Plasmalab System 100 |
| Wafer Handling | Up to 200 mm (8") single-wafer or batch (6 × 50 mm), cassette-to-cassette transfer via load-lock chamber |
| Substrate Temperature Range | –150 °C to +700 °C |
| Gas Delivery | Optional 6- or 12-channel gas manifold (remotely mounted) |
| In-situ Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) compatible |
| Integration Capability | Cluster tool ready with robotic wafer handling |
| Process Flexibility | Reactive ion etching (RIE), inductively coupled plasma (ICP), electron cyclotron resonance (ECR), and plasma-enhanced chemical vapor deposition (PECVD) modes |
| Brand | Nano-Master |
|---|---|
| Origin | Germany |
| Model | SWC-3000 |
| Maximum Substrate Size | 300 mm (12") round or 230 mm × 230 mm (9" × 9") square |
| Control System | Microprocessor-based automation |
| Optional Modules | PVA brush station, Chemical Dispense Unit (CDU), N₂ ionizer, IR drying lamp, custom photomask/wafer chucks |
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