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| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Type | Mask Aligner / Stepper / Scanner |
| Technology | EUV (13.5 nm) and DUV (193 nm ArFi, 248 nm KrF, 365 nm i-line) |
| Numerical Aperture (NA) | 0.75–0.55 |
| Resolution | ≤8 nm (High-NA EUV) to ≤220 nm (i-line) |
| Overlay Accuracy | ≤1.1 nm (NXE:3800E) |
| Throughput | 160–350 wafers/hour (300 mm) |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 certified, compatible with 21 CFR Part 11 audit trails via integrated metrology interfaces |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | 1460K |
| Type | Contact/Proximity Mask Aligner |
| Application | R&D and low-volume semiconductor prototyping, MEMS, microfluidics, academic cleanroom fabrication |
| Brand | WUXI CAS PHOTONICS INC |
|---|---|
| Origin | Sichuan, China |
| Model | URE-2000S/25A |
| Exposure Area | 6-inch wafer |
| Exposure Wavelength | 365 nm (i-line) |
| Irradiance | >25 mW/cm² |
| Resolution | 1 µm |
| Alignment Accuracy | ±2 µm (double-side, 0.8 mm substrate thickness), ±0.8 µm (single-side) |
| Illumination Uniformity | ≤2.5% (Φ100 mm), ≤4% (Φ150 mm) |
| Mask-to-Wafer Motion Range | X: ±5 mm, Y: ±5 mm, Θ: ±6° |
| Mercury Lamp | 350 W DC, imported (OSRAM) |
| Collimation Angle | 3.5° |
| Maximum Photoresist Thickness | 350 µm (SU-8, under specified process conditions) |
| Dimensions (L×W×H) | 1300 × 900 × 1800 mm |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Product Category | Mask Aligner / Stepper-Based Lithography System for Semiconductor Fabrication |
| Models | TWINSCAN XT:1900Gi, XT:2000i, NXT:1980Di, NXT:2050i, NXE:3400B/C, NXE:3600D, EXE:5000 Series |
| Light Source Wavelengths | 248 nm (KrF), 193 nm (ArF dry & immersion), 13.5 nm (EUV) |
| Single-Exposure Resolution | 38 nm (ArF immersion), 13 nm (EUV, NA=0.33), 8 nm (High-NA EUV, NA=0.55) |
| Throughput | Up to 275 wafers/hour (NXT:2050i), ~170 wafers/day (NXE:3400C), target 220 wafers/day (EXE:5000) |
| Supported Process Nodes | 28 nm to sub-2 nm |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 safety standards, compatible with 300 mm wafer handling automation (SECS/GEM) |
| Brand | Canon (Japan) |
|---|---|
| Origin | Japan |
| Equipment Type | Mask Lithography System (Stepper/Scanner/NIL) |
| Wafer/Substrate Compatibility | 200 mm, 300 mm, Gen 8.6 to Gen 10.5 FPD glass |
| Resolution | ≤65 nm (KrF stepper, with multi-patterning), 0.18–0.35 µm (i-line/KrF), 1–2 µm (packaging), 3–5 µm (FPD), <10 nm (NIL, theoretical) |
| Exposure Source | i-line (365 nm), KrF (248 nm), NIL UV imprint |
| Alignment Accuracy | ±0.5 µm (FPA-5520iV) |
| Throughput | ~100–120 wph (300 mm, FPA-8000 series) |
| Compliance | ISO 14644-1 Class 5 cleanroom compatible, SEMI S2/S8 certified, supports GLP/GMP-aligned process documentation |
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