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| Brand | JEOL (Japan Electron Optics Laboratory) |
|---|---|
| Origin | Japan |
| Model | JXA-iHP100 |
| Acceleration Voltage | 0–30 kV (0.1 kV step) |
| Beam Current Range | 10⁻¹² – 10⁻⁵ A |
| Beam Current Stability | ±5% / h, ±0.3% / 12 h (W) |
| Secondary Electron Resolution | 6 nm (W), 5 nm (LaB₆) at WD = 11 mm, 30 kV |
| Scan Magnification | ×40 – ×300,000 (WD = 11 mm) |
| Max. Image Resolution | 5,120 × 3,840 pixels |
| Display | Dual LCDs (1,280 × 1,024 each) for EPMA and SEM/EDS operation |
| Optical Microscope Resolution | ~1 µm |
| Depth of Field | ~1 µm |
| Vacuum System | Mechanical pump + turbomolecular pump + ion pump |
| Chamber Vacuum | <8.0 × 10⁻⁴ Pa |
| Gun Vacuum | <9.0 × 10⁻⁵ Pa |
| Elemental Detection Range | WDS: Be (optional) to U |
| EDS | B to U |
| WDS Wavelength Range | 0.087–9.3 nm |
| EDS Energy Range | 0–20 keV |
| WDS Spectrometer Channels | 1–5 (configurable) |
| EDS Detector | One SDD (Silicon Drift Detector), fanless option available |
| Max. Sample Size | 100 mm × 100 mm × 50 mm (H) |
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