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| Brand | AML |
|---|---|
| Origin | United Kingdom |
| Model | AWB-04 & AWB-08 Platform |
| Vacuum Base Pressure | ≤1×10⁻⁶ mbar |
| Maximum Bonding Force | 40 kN |
| Maximum Temperature | 560 °C |
| Anodic Bonding Voltage | 0–2.5 kV DC (up to 40 mA) |
| Alignment Accuracy | ±1 µm (in-situ, hot or cold) |
| Compatible Wafer Sizes | 2″, 3″, 4″, 5″, 6″, and 8″ |
| Bonding Environments | High vacuum, UHV (optional), controlled process gas (e.g., forming gas), or atmospheric inert gas |
| Optical System | Dual CCD microscope with through-the-lens illumination, visible + infrared imaging, real-time side-by-side wafer alignment display |
| Control Architecture | Fully automated PC-based system with recipe-driven operation, full parameter logging (voltage, current, integrated charge, temperature, pressure, force, separation, event timestamps), SPC-compliant data export, and remote diagnostic capability via secure network interface |
| Brand | Tops |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | TL-1 EX, TL-1 Plus |
| Laser Source | Pulsed Fiber Laser (Nd:YAG, 1064 nm) |
| Operation Mode | Q-switched Pulsed |
| Laser Pulse Width | Nanosecond Range |
| Beam Delivery | Precision Galvo Scanning System |
| Safety Class | Class 4 Laser Product (IEC 60825-1) |
| Compliance | CE, RoHS, FDA 21 CFR Part 1040.10 |
| Brand | Nisene |
|---|---|
| Origin | USA |
| Model | PlasmaEtch |
| Technology | Microwave-induced plasma etching |
| Patent | US Patent 9,548,227 B2 |
| Compliance | RoHS-compliant process, halogen-free etchant chemistry |
| Application | Semiconductor IC decapsulation for failure analysis (FA), cross-sectioning, and package-level defect inspection |
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