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| Brand | JEOL |
|---|---|
| Origin | Japan |
| Model | JBX-9500FS |
| Acceleration Voltage | 100 kV |
| Maximum Substrate Size | 300 mm Ø wafers or 6-inch masks |
| Maximum Field Size | 1000 µm × 1000 µm |
| Stage Travel Range | 260 mm × 240 mm |
| Minimum Positioning Unit (LBC) | 0.15 nm (λ/4096) |
| Overlay Accuracy | ≤ ±11 nm |
| Field Stitching Accuracy | ≤ ±10 nm |
| In-Field Placement Accuracy | ≤ ±9 nm |
| Position DAC Resolution | 20-bit |
| Scan DAC Resolution | 14-bit |
| Scan Step Size | 0.25 nm |
| Maximum Scan Rate | 100 MHz |
| Electron Source | ZrO/W Schottky Emitter |
| Brand | Nanoscribe |
|---|---|
| Country of Origin | Germany |
| Model | Photonic Professional GT2 |
| Category | Two-Photon Polymerization (TPP) Microfabrication System |
| Automation Level | Fully Automated |
| User Interface | Intuitive Graphical Workflow Environment |
| Compliance Framework | Designed for ISO 14644-1 Class 5 cleanroom integration |
| Software Architecture | Windows-based, FDA 21 CFR Part 11–ready audit trail support (optional configuration) |
| Brand | Raith |
|---|---|
| Origin | Germany |
| Model | Pioneer Two |
| Electron Source | Thermal Field Emission Gun |
| Accelerating Voltage Range | 20 V – 30 kV |
| Minimum Guaranteed Resolution (Line Width) | ≤8 nm |
| Stage Travel (X/Y/Z) | 50 mm × 50 mm × 25 mm |
| XY Positioning Accuracy | ±2 nm |
| Overlay/Pattern Stitching Accuracy | ≤50 nm |
| Imaging Magnification Range | 20× – 1,000,000× |
| Optional Add-ons | Backscattered Electron Detector (BSED), Energy-Dispersive X-ray Spectrometer (EDS), Tilt-Rotation Stage Module |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | P130 / S130 |
| Price Range | USD 280,000 – 420,000 |
| UV Light Source | 405 nm LED |
| XY Resolution | 2–10 µm |
| Layer Thickness | 5–20 µm |
| Build Volume (P130) | 3.84 × 2.16 × 10 mm (Mode 1) / 38.4 × 21.6 × 10 mm (Mode 2) / 50 × 50 × 10 mm (Mode 3) |
| Build Volume (S130) | Up to 100 × 100 × 50 mm |
| Optical System | High-NA Projection Micro-Lithography Optics |
| Post-Processing | Integrated Vacuum Despersion + UV Curing Station |
| Power Requirement | 200–240 V AC, 50/60 Hz, 3 kW |
| Weight | 450 kg |
| Dimensions | 1720 × 650 × 1820 mm |
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