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| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | HT-RTA59HD |
| Instrument Type | High-Vacuum Rapid Thermal Annealer (RTA) |
| Sample Size | 15 mm × 15 mm × 1 mm |
| Temperature Range | Ambient to 1800 °C |
| Max Heating Rate | ≥1500 °C/s (typical for 15 mm × 15 mm SiC wafer) |
| Cooling Method | Optional integrated water-quench (CAS-59AQ variant) |
| Heating Source | High-power focused infrared halogen lamps |
| Atmosphere Options | Vacuum (≤10⁻⁴ Pa), inert gas (N₂, Ar), or oxidizing (O₂) |
| Thermocouple Compatibility | JIS B standard sheathed thermocouples (W–Re optional) |
| Chamber Liner Material | High-purity alumina or graphite |
| Control Interface | USB-connected PC-based temperature programming and real-time thermal monitoring |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Max Temperature | up to 1450°C (100HT version) |
| Max Ramp Rate | up to 200°C/s |
| Vacuum Capability | High vacuum (base pressure <1×10⁻⁶ mbar with optional turbo pump) |
| Cooling | Forced gas quench or passive cooling |
| Control | Dual-sensor (thermocouple + pyrometer), digital PID, Ethernet-enabled PC interface |
| Gas Lines | Up to 5 independent channels with digital mass flow controllers (MFCs) |
| Chamber | Stainless steel cold-wall design with infrared halogen tubular lamps |
| Substrate Compatibility | Ø50–300 mm wafers and non-standard substrates (glass, metal, polymer, graphite, SiC susceptors) |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
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