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| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Amod |
| Base Plate Size | 500 mm × 500 mm |
| Max. Source Capacity | 8 |
| Vacuum Capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Deposition Methods | DC/RF/Pulsed DC/HIPIMS Sputtering, Thermal Evaporation, E-beam Evaporation, Reactive Sputtering, Plasma & Ion Beam Surface Treatment |
| Substrate Handling Options | Heated/Cooled Stages, Variable-Angle Rotation, Planetary Motion, Dome & Masking Fixtures, Substrate Biasing |
| Control System | Aeres™ Software with Recipe Management, Real-time Rate Monitoring, and Torque-Sensing Crucible Indexing |
| Brand | Angstrom |
|---|---|
| Origin | Canada |
| Model | EvoVac |
| Chamber Dimensions | 500 mm × 700 mm substrate stage |
| Vacuum capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Source options | RF sputtering, DC sputtering, Pulsed DC sputtering, HIPIMS, reactive sputtering |
| Cathode configurations | circular, linear, and cylindrical |
| Application domain | microelectronics |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | COVAP |
| Vacuum Pumping | Turbo-molecular pump system |
| Substrate Size Range | Up to 1200 mm (customizable) |
| Deposition Technologies | DC/RF/MF/Pulsed DC sputtering, thermal evaporation (boat/wire/crucible), electron beam evaporation, reactive sputtering, ion-assisted deposition |
| Plasma & Ion Beam Sources | Integrated glow discharge plasma cleaning, broad-beam ion sources for substrate pre-treatment and film densification |
| Film Thickness Monitoring | Isolated quartz crystal microbalance (QCM) sensors with cross-source interference mitigation |
| Automation | Recipe-driven multi-layer deposition control (sequential or co-deposition), programmable substrate rotation/tilt/heating |
| Integration Readiness | Glovebox-compatible design, modular chamber architecture |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | Angstrom |
|---|---|
| Model | customized-23 |
| Chamber Diameter | 200 mm (quartz) |
| Maximum Substrate Diameter | 150 mm |
| Furnace | Triple-zone resistive heating |
| Uniform Temperature Zone | 150 mm |
| Max Temperature | 1000 °C |
| Pressure Control Range | 50–500 mTorr (downstream, VAT throttle butterfly valve) |
| Vacuum Pump | Ebara ESA25-D dry pump (8 CFM) |
| Application Domain | Semiconductor thin-film fabrication, MEMS, optoelectronics, graphene & CNT research |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Nexdep |
| Substrate Size | 6-inch (150 mm) |
| Chamber Dimensions | 400 × 400 × 500 mm (L×W×H) |
| Base Pressure | <5 × 10⁻⁷ Torr |
| Vacuum Gauging | Inficon MPG400 (3.75 × 10⁻⁹–760 Torr) |
| Roughing Pump | Oil-sealed rotary vane pump, ≥9 cfm |
| High-Vacuum Pump | Turbomolecular pump, ≥685 L/s |
| Evaporation Source | Resistive-heated metal source, 2.5 kW max power, SCR-controlled |
| Thickness Monitor | Water-cooled quartz crystal microbalance (QCM) probe with rigid mounting |
| Sample Stage | Motorized rotation (10–30 rpm), tilt-free horizontal design, shutter-integrated |
| Chamber Sealing | Dual O-ring sealed front sliding door and rear hinged door with integrated anti-coating viewport |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Box-Type PVD Coater |
| Substrate Range | 100 mm – 1200 mm |
| PVD Process Compatibility | Thermal Evaporation, Electron Beam Evaporation, Sputtering (DC/RF/Magnetron), Pulsed Laser Deposition (PLD) |
| Vacuum Capability | Optional Ultra-High Vacuum (UHV) Configuration (≤1×10⁻⁹ Torr base pressure) |
| Application Domain | Microelectronics, Thin-Film Optics, MEMS, Quantum Devices, R&D Prototyping |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Equipment Type | Metalorganic Chemical Vapor Deposition (MOCVD) System |
| Reactor Architecture | Close-Coupled Showerhead® with Triple-Zone Heater |
| Maximum Substrate Temperature | 1400 °C |
| Substrate Configurations | 3×2″, 6×2″, 19×2″ wafers |
| In-situ Monitoring Options | LayTec EpiTT / EpiCurve®, AIXTRON Argus® Full-Wafer Temperature Mapping, AIXTRON Epison® Gas Concentration Sensor |
| Footprint | Compact Design for Lab and Pilot-Line Integration |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Software Platform | AIXTRON ProcessSuite™ with Audit Trail & Electronic Signature Support (21 CFR Part 11 compliant) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5+ C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm & 200 mm (Si, Sapphire, SiC) |
| Operating Pressure | Several mTorr |
| Deposition Rate | Up to several nm/min (material-dependent) |
| Reactor Type | Batch-mode with axial symmetry |
| Wafer Bow Control | Optimized via low-thermal-flux “warm ceiling” design |
| Temperature Uniformity | Minimized vertical thermal gradient for reduced wafer curvature |
| Configurable Substrate Holder | Customer-specific cavity design for precise wafer temperature profiling |
| Capacity | 8×150 mm or 5×200 mm wafers |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5 WW C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm (8×150 mm configuration) |
| Reactor Type | Planetary Rotating Reactor with Hot Wafer Transfer |
| Temperature Control | Wafer-Level |
| Process Automation | Cassette-to-Cassette Handling |
| Uniformity Control | AutoSat™ Dynamic Saturation Compensation |
| Factory Interface | SECS/GEM compliant |
| Deposition Rate | ~nm/min (material- and process-dependent) |
| Application Focus | SiC, GaN, and other compound semiconductor epitaxy |
| Compliance | Designed for integration into ISO Class 5–7 cleanroom environments and compatible with SEMI S2/S8 safety and automation standards |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | Customized |
| Heating Method | Tungsten Filament with Triple-Zone Temperature Control (up to 1400 °C) |
| Substrate Compatibility | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Reaction Chamber | Adjustable showerhead-to-substrate spacing (5–25 mm) |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Scope | Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI compound semiconductors |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with semiconductor fab infrastructure (SEMI S2/S8, SEMI E10) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10-SiC |
| Wafer Compatibility | 150 mm & 200 mm |
| Application Focus | SiC Epitaxy for Power Devices |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Model | 6110 |
| Spindle Power | 2.2 kW |
| Max Spindle Speed | 60,000 rpm |
| Spindle Torque | 0.42 N·m |
| θ-Axis Drive | Direct-Drive (DD) Motor |
| Machine Width | 490 mm |
| Control Interface | 17-inch LCD Touchscreen GUI |
| Standard Features | Auto-Calibration, Auto-Cutting, Blade-Trace Inspection |
| Optional Features | Fragment Shape Recognition, One-Touch Position Verification |
| Sample Compatibility | Si, SiC, GaAs, Glass, Ceramic, Solar Wafers |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Model | 7920 |
| Blade Diameter Range | 2"–3" |
| Maximum Spindle Speed | 60,000 rpm |
| Spindle Power | 1.2 kW per axis |
| Workpiece Capacity | Ø12" or 12" × 10" |
| X-Axis | Pneumatic Linear Slide |
| Y-Axis Resolution | 0.1 µm |
| Z1/Z2-Axis Resolution | 0.2 µm |
| Z1/Z2 Travel | 30 mm |
| Z1/Z2 Repeatability | ±1.0 µm |
| θ-Axis Repeatability | ±4 arc-sec |
| θ-Axis Travel | 350° |
| Cumulative Positioning Accuracy | ±1.5 µm |
| Step Positioning Accuracy | ±1.0 µm |
| Electrical Supply | 200–240 VAC, 50–60 Hz, Single-Phase |
| Dimensions (W×D×H) | 875 × 975 × 1450 mm |
| Weight | 900 kg |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX 2800G4-TM |
| Heating Method | Hot-Wall |
| Internal Chamber Dimensions | 15 × 4 in & 8 × 6 in |
| Reactor Configurations | 42 × 2 in / 11 × 4 in / 6 × 6 in |
| Wafer Throughput | High |
| Process Cycle Time | Rapid |
| Uniformity & Stability | Optimized for Production Yield |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10 |
| Heating Method | Hot-Wall |
| Substrate Sizes | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch (carrier exchange supports 6×2 inch, 3×3 inch, 1×6 inch) |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Temperature Control | Triple-zone tungsten filament heating, up to 1400 °C |
| Showerhead-to-Substrate Spacing | Adjustable from 5 mm to 25 mm |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Domain | Semiconductor thin-film epitaxy |
| Film Types | Metallic and compound semiconductor layers (e.g., Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI) |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Regional Classification | Domestic (China) |
| Model | 8230 |
| Pricing | Available Upon Request |
| Brand | ADT |
|---|---|
| Model | WCS-977 |
| Type | Wet Process Wafer Cleaning Equipment |
| Chamber Capacity | 6-inch and 8-inch wafers |
| Dimensions (W×D×H) | 410 × 625 × 980 mm |
| Power Supply | 230 VAC, 50 Hz, 5 A |
| CDA Pressure | 0.5–0.6 MPa |
| CDA Consumption | ≤3 m³/h |
| DI Water Pressure | 0.2–0.3 MPa |
| DI Water Consumption | ≤100 L/h |
| Rotation Speed Range | 500–3000 rpm |
| Vacuum Source | Integrated vacuum generator |
| CO₂ Injection | Membrane contactor-based ultra-pure CO₂ dissolution into DI water |
| Control System | Programmable Logic Controller (PLC) with recipe storage and real-time process monitoring |
| Safety | Interlocked access door, status indicator lights, emergency stop circuit |
| Construction | Internal 316L stainless steel chamber, exterior powder-coated steel housing |
| Compliance | Designed for Class 100 cleanroom integration, compatible with SEMI S2/S8 safety guidelines |
| Brand | ADT |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Region of Manufacture | Domestic (China) |
| Model | 7234 |
| Pricing | Upon Request |
| Brand | UniTemp |
|---|---|
| Model | VSS-300 |
| Origin | Germany |
| Chamber Dimensions | 350 × 350 × 75 mm (expandable to 300 mm height) |
| Max Ramp-Up Rate | 150 K/min |
| Max Ramp-Down Rate | 120 K/min |
| Bottom Heating Power | 2 × 12-lamp arrays, 18 kW total |
| Cooling | Water-cooled graphite plate (310 × 310 mm) |
| Control System | SIMATIC PLC with 7" touchscreen HMI |
| Programmable Steps | 50 programs × 50 steps each |
| Process Gas Flow | Standard 1.5 sL/min MFC (up to 4 gas lines optional) |
| Vacuum Options | MPC (10 hPa) or RVP (10⁻³ hPa) |
| Power Supply | 3-phase + N + PE, 230 V, CEE 3×32 A |
| Weight | ~140 kg |
| Compliance | Designed for ISO 9001-compliant SMT manufacturing environments |
| Enclosure Material | Polished aluminum chamber walls (stainless steel optional) |
| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |
| Brand | TSD |
|---|---|
| Model | IVG-2040 / IVG-3040 |
| Max Wafer Size | 200 mm (8") / 300 mm (12") |
| Grinding Wheel OD | 203 mm / 303 mm |
| Spindle Power | 6.0 kW / 9.5 kW |
| Spindle Speed | 0–6000 rpm / 0–4000 rpm |
| Table Speed | 0–380 rpm |
| Z-Axis Feed Rate | 0.1–1000 µm/sec |
| In-Line Thickness Measurement Repeatability | ±0.001 mm |
| In-Line Thickness Range (OMM) | 0–4800 µm |
| Integrated Auto Load/Unload | Yes |
| Non-Contact Gauging (NCG) | Optional |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | XBS200 |
| Maximum Wafer Size | 200 mm |
| Bonding Force | up to 100 kN |
| Temperature Range | up to 550 °C |
| Vacuum Chamber Pressure Range | 5×10⁻⁵ mbar to 3 bar |
| Heating/Cooling Rate | up to 40 K/min (heating), up to 30 K/min (cooling) |
| Bonding Force Repeatability | < 2% |
| Temperature Uniformity | < 1% |
| Process Control | Programmable ramp/soak profiles with independent pressure, temperature, and force regulation |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SENDIRA |
| Spectral Range | 400–6,000 cm⁻¹ (1.7–25 µm) |
| Detector Options | DTGS or MCT |
| Integrated FTIR Platform | Compatible with Thermo Fisher iS50 |
| Software | SpectraRay/4 + Dedicated FTIR Control Suite |
| Optical Configuration | Purged ellipsometer optics, motorized goniometer, horizontal sample stage, auto-collimating telescope |
| Application Domain | Vibrational spectroscopic ellipsometry for thin-film metrology |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-220N |
| Wafer Capacity | 5 × ø3″, 3 × ø4″, or 1 × ø8″ wafers |
| Footprint Reduction | 40% vs. legacy SAMCO PECVD platforms |
| Process Gases | SiH₄, NH₃, N₂O, TEOS (optional add-on), O₂, Ar, N₂ |
| Plasma Source | RF (13.56 MHz) capacitive coupling |
| Chamber Material | Anodized aluminum with quartz-lined process zone |
| Vacuum System | Dry scroll pump + optional turbo-molecular pump |
| Compliance | CE-marked, compatible with ISO 14644-1 Class 5 cleanroom integration |
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