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| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-800BCT |
| Type | Production-Grade Deep Silicon Etching System |
| Discharge Mode | Inductively Coupled Plasma (ICP) |
| Etch Aspect Ratio | >100 |
| Process Capability | High-Rate, High-Selectivity DRIE |
| Application Focus | MEMS, TSV, Power Devices, SOI Wafer Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Control Architecture | Fully automated recipe-driven operation with real-time RF/power monitoring |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-350iPC |
| Maximum Wafer Diameter | Ø350 mm |
| ICP Source Technology | HSTC™ (Hyper Symmetrical Tornado Coil) |
| Vacuum Pumping | Turbo Molecular Pump (TMP) with Symmetrical Exhaust Design |
| Gas Delivery | Optimized Multi-Channel Manifold |
| Endpoint Detection | Optional Optical Interferometric Monitoring System |
| Application Scope | GaN, GaAs, InP, SiC, SiN, SiO₂, Dielectrics, Metals, PSS Fabrication |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SENTTECH Cluster System |
| Price | Upon Request |
| Brand | NAURA |
|---|---|
| Origin | Beijing, China |
| Model | GSE C200 |
| Wafer Size Capacity | ≤8-inch |
| Plasma Source Type | High-Density Inductively Coupled Plasma (ICP) |
| Etch Uniformity | <±3% (1σ, across 200 mm wafer) |
| Material Compatibility | Si, SiO₂, Si₃N₄, GaN, GaAs, InP, LiNbO₃, Nb, PI, metals, organics |
| Application Scope | R&D, failure analysis, pilot-line process development |
| Compliance | Designed to meet SEMI S2/S8 safety guidelines |
| Software | Integrated recipe management with audit trail logging (21 CFR Part 11–ready configuration available) |
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