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| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Amod |
| Base Plate Size | 500 mm × 500 mm |
| Max. Source Capacity | 8 |
| Vacuum Capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Deposition Methods | DC/RF/Pulsed DC/HIPIMS Sputtering, Thermal Evaporation, E-beam Evaporation, Reactive Sputtering, Plasma & Ion Beam Surface Treatment |
| Substrate Handling Options | Heated/Cooled Stages, Variable-Angle Rotation, Planetary Motion, Dome & Masking Fixtures, Substrate Biasing |
| Control System | Aeres™ Software with Recipe Management, Real-time Rate Monitoring, and Torque-Sensing Crucible Indexing |
| Brand | Angstrom |
|---|---|
| Origin | Canada |
| Model | EvoVac |
| Chamber Dimensions | 500 mm × 700 mm substrate stage |
| Vacuum capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Source options | RF sputtering, DC sputtering, Pulsed DC sputtering, HIPIMS, reactive sputtering |
| Cathode configurations | circular, linear, and cylindrical |
| Application domain | microelectronics |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | COVAP |
| Vacuum Pumping | Turbo-molecular pump system |
| Substrate Size Range | Up to 1200 mm (customizable) |
| Deposition Technologies | DC/RF/MF/Pulsed DC sputtering, thermal evaporation (boat/wire/crucible), electron beam evaporation, reactive sputtering, ion-assisted deposition |
| Plasma & Ion Beam Sources | Integrated glow discharge plasma cleaning, broad-beam ion sources for substrate pre-treatment and film densification |
| Film Thickness Monitoring | Isolated quartz crystal microbalance (QCM) sensors with cross-source interference mitigation |
| Automation | Recipe-driven multi-layer deposition control (sequential or co-deposition), programmable substrate rotation/tilt/heating |
| Integration Readiness | Glovebox-compatible design, modular chamber architecture |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Nexdep |
| Substrate Size | 6-inch (150 mm) |
| Chamber Dimensions | 400 × 400 × 500 mm (L×W×H) |
| Base Pressure | <5 × 10⁻⁷ Torr |
| Vacuum Gauging | Inficon MPG400 (3.75 × 10⁻⁹–760 Torr) |
| Roughing Pump | Oil-sealed rotary vane pump, ≥9 cfm |
| High-Vacuum Pump | Turbomolecular pump, ≥685 L/s |
| Evaporation Source | Resistive-heated metal source, 2.5 kW max power, SCR-controlled |
| Thickness Monitor | Water-cooled quartz crystal microbalance (QCM) probe with rigid mounting |
| Sample Stage | Motorized rotation (10–30 rpm), tilt-free horizontal design, shutter-integrated |
| Chamber Sealing | Dual O-ring sealed front sliding door and rear hinged door with integrated anti-coating viewport |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Box-Type PVD Coater |
| Substrate Range | 100 mm – 1200 mm |
| PVD Process Compatibility | Thermal Evaporation, Electron Beam Evaporation, Sputtering (DC/RF/Magnetron), Pulsed Laser Deposition (PLD) |
| Vacuum Capability | Optional Ultra-High Vacuum (UHV) Configuration (≤1×10⁻⁹ Torr base pressure) |
| Application Domain | Microelectronics, Thin-Film Optics, MEMS, Quantum Devices, R&D Prototyping |
| Brand | Vector Scientific |
|---|---|
| Origin | Guangdong, China |
| Model | SLKX-102-11 |
| Film Thickness Uniformity | ≤±2.5% over 4-inch wafer area, ≤±3.5% over 8-inch wafer area (measured on Ti film, 200–500 nm, edge exclusion of 5 mm, 5-point random sampling) |
| System Architecture | Interconnected multi-chamber PVD platform with load-lock and transfer robot |
| Base Pressure | ≤5×10⁻⁸ Torr (typical, after bake-out) |
| Chamber Interface Standard | CF flanges (DN100/DN160 compatible) |
| Target-to-Substrate Distance | Externally adjustable manually |
| Control Architecture | Modular PLC + real-time OS with role-based user permissions |
| Compliance | Designed to support GLP/GMP-aligned process documentation |
| Brand | Shenyang K.Y. |
|---|---|
| Origin | Liaoning, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | PVD400 |
| Instrument Type | Magnetron Sputtering Coater |
| Application Field | Microelectronics |
| Substrate Size | Ø100 mm (1 × 4-inch wafer) |
| Targets | Three Ø50.8 mm (2-inch) Permanent-Magnet DC/RF Sputtering Targets |
| Maximum Substrate Temperature | 800 °C |
| Thickness Uniformity (within wafer) | ≤ ±3% |
| Base Vacuum | ≤ 6.6 × 10⁻⁵ Pa |
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