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| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | GEN10 |
| Configuration | Cluster-tool architecture with up to three material-specific growth chambers |
| Vacuum Integration | Ultra-high vacuum (UHV) integrated chamber system |
| Automation | Robotic wafer transfer for unattended operation |
| Application Scope | Research-grade III–V, II–VI, and elemental semiconductor epitaxy |
| Compliance Framework | Designed for GLP-compliant process documentation and ASTM F1529-22 compatible thin-film metrology workflows |
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