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| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Amod |
| Base Plate Size | 500 mm × 500 mm |
| Max. Source Capacity | 8 |
| Vacuum Capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Deposition Methods | DC/RF/Pulsed DC/HIPIMS Sputtering, Thermal Evaporation, E-beam Evaporation, Reactive Sputtering, Plasma & Ion Beam Surface Treatment |
| Substrate Handling Options | Heated/Cooled Stages, Variable-Angle Rotation, Planetary Motion, Dome & Masking Fixtures, Substrate Biasing |
| Control System | Aeres™ Software with Recipe Management, Real-time Rate Monitoring, and Torque-Sensing Crucible Indexing |
| Brand | Angstrom |
|---|---|
| Origin | Canada |
| Model | EvoVac |
| Chamber Dimensions | 500 mm × 700 mm substrate stage |
| Vacuum capability | UHV-compatible (≤1×10⁻⁹ Torr base pressure) |
| Source options | RF sputtering, DC sputtering, Pulsed DC sputtering, HIPIMS, reactive sputtering |
| Cathode configurations | circular, linear, and cylindrical |
| Application domain | microelectronics |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | COVAP |
| Vacuum Pumping | Turbo-molecular pump system |
| Substrate Size Range | Up to 1200 mm (customizable) |
| Deposition Technologies | DC/RF/MF/Pulsed DC sputtering, thermal evaporation (boat/wire/crucible), electron beam evaporation, reactive sputtering, ion-assisted deposition |
| Plasma & Ion Beam Sources | Integrated glow discharge plasma cleaning, broad-beam ion sources for substrate pre-treatment and film densification |
| Film Thickness Monitoring | Isolated quartz crystal microbalance (QCM) sensors with cross-source interference mitigation |
| Automation | Recipe-driven multi-layer deposition control (sequential or co-deposition), programmable substrate rotation/tilt/heating |
| Integration Readiness | Glovebox-compatible design, modular chamber architecture |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | Angstrom |
|---|---|
| Model | customized-23 |
| Chamber Diameter | 200 mm (quartz) |
| Maximum Substrate Diameter | 150 mm |
| Furnace | Triple-zone resistive heating |
| Uniform Temperature Zone | 150 mm |
| Max Temperature | 1000 °C |
| Pressure Control Range | 50–500 mTorr (downstream, VAT throttle butterfly valve) |
| Vacuum Pump | Ebara ESA25-D dry pump (8 CFM) |
| Application Domain | Semiconductor thin-film fabrication, MEMS, optoelectronics, graphene & CNT research |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Nexdep |
| Substrate Size | 6-inch (150 mm) |
| Chamber Dimensions | 400 × 400 × 500 mm (L×W×H) |
| Base Pressure | <5 × 10⁻⁷ Torr |
| Vacuum Gauging | Inficon MPG400 (3.75 × 10⁻⁹–760 Torr) |
| Roughing Pump | Oil-sealed rotary vane pump, ≥9 cfm |
| High-Vacuum Pump | Turbomolecular pump, ≥685 L/s |
| Evaporation Source | Resistive-heated metal source, 2.5 kW max power, SCR-controlled |
| Thickness Monitor | Water-cooled quartz crystal microbalance (QCM) probe with rigid mounting |
| Sample Stage | Motorized rotation (10–30 rpm), tilt-free horizontal design, shutter-integrated |
| Chamber Sealing | Dual O-ring sealed front sliding door and rear hinged door with integrated anti-coating viewport |
| Brand | Angstrom Engineering |
|---|---|
| Origin | Canada |
| Model | Box-Type PVD Coater |
| Substrate Range | 100 mm – 1200 mm |
| PVD Process Compatibility | Thermal Evaporation, Electron Beam Evaporation, Sputtering (DC/RF/Magnetron), Pulsed Laser Deposition (PLD) |
| Vacuum Capability | Optional Ultra-High Vacuum (UHV) Configuration (≤1×10⁻⁹ Torr base pressure) |
| Application Domain | Microelectronics, Thin-Film Optics, MEMS, Quantum Devices, R&D Prototyping |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Equipment Type | Metalorganic Chemical Vapor Deposition (MOCVD) System |
| Reactor Architecture | Close-Coupled Showerhead® with Triple-Zone Heater |
| Maximum Substrate Temperature | 1400 °C |
| Substrate Configurations | 3×2″, 6×2″, 19×2″ wafers |
| In-situ Monitoring Options | LayTec EpiTT / EpiCurve®, AIXTRON Argus® Full-Wafer Temperature Mapping, AIXTRON Epison® Gas Concentration Sensor |
| Footprint | Compact Design for Lab and Pilot-Line Integration |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Software Platform | AIXTRON ProcessSuite™ with Audit Trail & Electronic Signature Support (21 CFR Part 11 compliant) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5+ C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm & 200 mm (Si, Sapphire, SiC) |
| Operating Pressure | Several mTorr |
| Deposition Rate | Up to several nm/min (material-dependent) |
| Reactor Type | Batch-mode with axial symmetry |
| Wafer Bow Control | Optimized via low-thermal-flux “warm ceiling” design |
| Temperature Uniformity | Minimized vertical thermal gradient for reduced wafer curvature |
| Configurable Substrate Holder | Customer-specific cavity design for precise wafer temperature profiling |
| Capacity | 8×150 mm or 5×200 mm wafers |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5 WW C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm (8×150 mm configuration) |
| Reactor Type | Planetary Rotating Reactor with Hot Wafer Transfer |
| Temperature Control | Wafer-Level |
| Process Automation | Cassette-to-Cassette Handling |
| Uniformity Control | AutoSat™ Dynamic Saturation Compensation |
| Factory Interface | SECS/GEM compliant |
| Deposition Rate | ~nm/min (material- and process-dependent) |
| Application Focus | SiC, GaN, and other compound semiconductor epitaxy |
| Compliance | Designed for integration into ISO Class 5–7 cleanroom environments and compatible with SEMI S2/S8 safety and automation standards |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | Customized |
| Heating Method | Tungsten Filament with Triple-Zone Temperature Control (up to 1400 °C) |
| Substrate Compatibility | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Reaction Chamber | Adjustable showerhead-to-substrate spacing (5–25 mm) |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Scope | Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI compound semiconductors |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with semiconductor fab infrastructure (SEMI S2/S8, SEMI E10) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10-SiC |
| Wafer Compatibility | 150 mm & 200 mm |
| Application Focus | SiC Epitaxy for Power Devices |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX 2800G4-TM |
| Heating Method | Hot-Wall |
| Internal Chamber Dimensions | 15 × 4 in & 8 × 6 in |
| Reactor Configurations | 42 × 2 in / 11 × 4 in / 6 × 6 in |
| Wafer Throughput | High |
| Process Cycle Time | Rapid |
| Uniformity & Stability | Optimized for Production Yield |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10 |
| Heating Method | Hot-Wall |
| Substrate Sizes | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch (carrier exchange supports 6×2 inch, 3×3 inch, 1×6 inch) |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Temperature Control | Triple-zone tungsten filament heating, up to 1400 °C |
| Showerhead-to-Substrate Spacing | Adjustable from 5 mm to 25 mm |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Domain | Semiconductor thin-film epitaxy |
| Film Types | Metallic and compound semiconductor layers (e.g., Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI) |
| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-220N |
| Wafer Capacity | 5 × ø3″, 3 × ø4″, or 1 × ø8″ wafers |
| Footprint Reduction | 40% vs. legacy SAMCO PECVD platforms |
| Process Gases | SiH₄, NH₃, N₂O, TEOS (optional add-on), O₂, Ar, N₂ |
| Plasma Source | RF (13.56 MHz) capacitive coupling |
| Chamber Material | Anodized aluminum with quartz-lined process zone |
| Vacuum System | Dry scroll pump + optional turbo-molecular pump |
| Compliance | CE-marked, compatible with ISO 14644-1 Class 5 cleanroom integration |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | GEN10 |
| Configuration | Cluster-tool architecture with up to three material-specific growth chambers |
| Vacuum Integration | Ultra-high vacuum (UHV) integrated chamber system |
| Automation | Robotic wafer transfer for unattended operation |
| Application Scope | Research-grade III–V, II–VI, and elemental semiconductor epitaxy |
| Compliance Framework | Designed for GLP-compliant process documentation and ASTM F1529-22 compatible thin-film metrology workflows |
| Brand | Vector Scientific |
|---|---|
| Origin | Guangdong, China |
| Model | SLKX-102-11 |
| Film Thickness Uniformity | ≤±2.5% over 4-inch wafer area, ≤±3.5% over 8-inch wafer area (measured on Ti film, 200–500 nm, edge exclusion of 5 mm, 5-point random sampling) |
| System Architecture | Interconnected multi-chamber PVD platform with load-lock and transfer robot |
| Base Pressure | ≤5×10⁻⁸ Torr (typical, after bake-out) |
| Chamber Interface Standard | CF flanges (DN100/DN160 compatible) |
| Target-to-Substrate Distance | Externally adjustable manually |
| Control Architecture | Modular PLC + real-time OS with role-based user permissions |
| Compliance | Designed to support GLP/GMP-aligned process documentation |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-100ST |
| Substrate Diameter | Ø100 mm (4") |
| Deposition Temperature Range | 80–400 °C |
| SiO₂ Deposition Rate | >300 nm/min |
| Maximum Film Thickness | Up to 100 µm |
| Deposition Technology | Liquid-source PECVD with RF self-bias coupling |
| Precursor Type | Liquid TEOS (tetraethyl orthosilicate), optional Ge/P/B dopant sources |
| Stress Control | Low-stress SiO₂ via self-bias tuning |
| Step Coverage | High-aspect-ratio conformality |
| Footprint | Compact, cleanroom space-optimized |
| Brand | Shenyang K.Y. |
|---|---|
| Origin | Liaoning, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | PVD400 |
| Instrument Type | Magnetron Sputtering Coater |
| Application Field | Microelectronics |
| Substrate Size | Ø100 mm (1 × 4-inch wafer) |
| Targets | Three Ø50.8 mm (2-inch) Permanent-Magnet DC/RF Sputtering Targets |
| Maximum Substrate Temperature | 800 °C |
| Thickness Uniformity (within wafer) | ≤ ±3% |
| Base Vacuum | ≤ 6.6 × 10⁻⁵ Pa |
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