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| Brand | A&D |
|---|---|
| Origin | Japan |
| Model | SV-1A |
| Instrument Type | Handheld |
| Flow Rate | 0.1 ft³/min (2.83 L/min) |
| Particle Size Channels | 0.3 µm, 0.5 µm, 5.0 µm |
| Data Storage Capacity | 10,000 sample records |
| Power Supply | 4× AA Ni-MH rechargeable batteries (included) |
| Weight | 0.68 kg (1.5 lb) |
| Communication Interface | RS-232 / RS-485 |
| Compliance | ISO 21501-4, ISO 14644-1, JIS B 9921 |
| Warranty | 1 year |
| Brand | ATI |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Instrument |
| Model | WIS-1000 |
| Instrument Type | Optical Patterned Wafer Defect Inspection System |
| Target Applications | Semiconductor Front-End Process Monitoring |
| Process Node Support | Sub-28 nm FinFET and FD-SOI Technologies |
| Compatible Wafer Sizes | 200 mm and 300 mm |
| Throughput | Up to 120 wafers per hour (depending on inspection recipe and defect density) |
| Optical Resolution | ≤ 150 nm (at λ = 405 nm, high-NA dark-field imaging) |
| Defect Detection Sensitivity | ≥ 95% for ≥ 80 nm particles and ≥ 120 nm pattern bridging/bridging defects on metal and dielectric layers |
| Compliance | ISO 9001-certified manufacturing |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | Twinscan NXT:1980Di |
| Light Source | ArF Excimer Laser (193 nm) |
| Numerical Aperture (NA) | 1.35 |
| Resolution (single-exposure) | ≤38 nm |
| Overlay Accuracy | <1.5 nm (3σ) |
| Throughput | 275 wafers per hour (300 mm) |
| Platform Architecture | NXT3 |
| Immersion Technology | Water-based liquid immersion |
| Compliance | SEMI S2/S8, ISO 14644-1 Class 1 Cleanroom Compatible |
| Software Interface | TWINSCAN Control System (TCS) v5.x with integrated metrology feedback loops |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Type | Mask Aligner / Stepper / Scanner |
| Technology | EUV (13.5 nm) and DUV (193 nm ArFi, 248 nm KrF, 365 nm i-line) |
| Numerical Aperture (NA) | 0.75–0.55 |
| Resolution | ≤8 nm (High-NA EUV) to ≤220 nm (i-line) |
| Overlay Accuracy | ≤1.1 nm (NXE:3800E) |
| Throughput | 160–350 wafers/hour (300 mm) |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 certified, compatible with 21 CFR Part 11 audit trails via integrated metrology interfaces |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | 1460K |
| Type | Contact/Proximity Mask Aligner |
| Application | R&D and low-volume semiconductor prototyping, MEMS, microfluidics, academic cleanroom fabrication |
| Brand | Appsilon |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | MPCVD |
| Heating Method | Microwave Plasma Excitation |
| Application Domain | Semiconductor & Advanced Materials Research |
| Deposition Rate | Configurable per process recipe (typical range: 0.1–10 µm/h for diamond) |
| Process Gases | H₂, CH₄, N₂, O₂, Ar (gas mixing and mass flow control standard) |
| Deposited Films | Single-crystal & polycrystalline diamond, doped diamond (B/N/Si), diamond-like carbon (DLC), SiC, AlN |
| Base Vacuum | ≤5 × 10⁻⁷ mbar (with turbomolecular pumping system) |
| Operating Pressure Range | 10–200 mbar (microwave-coupled plasma stable across full range) |
| Chamber Internal Dimensions | Ø200 mm × 300 mm (standard configuration |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | HT-RTA59HD |
| Instrument Type | High-Vacuum Rapid Thermal Annealer (RTA) |
| Sample Size | 15 mm × 15 mm × 1 mm |
| Temperature Range | Ambient to 1800 °C |
| Max Heating Rate | ≥1500 °C/s (typical for 15 mm × 15 mm SiC wafer) |
| Cooling Method | Optional integrated water-quench (CAS-59AQ variant) |
| Heating Source | High-power focused infrared halogen lamps |
| Atmosphere Options | Vacuum (≤10⁻⁴ Pa), inert gas (N₂, Ar), or oxidizing (O₂) |
| Thermocouple Compatibility | JIS B standard sheathed thermocouples (W–Re optional) |
| Chamber Liner Material | High-purity alumina or graphite |
| Control Interface | USB-connected PC-based temperature programming and real-time thermal monitoring |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Max Temperature | up to 1450°C (100HT version) |
| Max Ramp Rate | up to 200°C/s |
| Vacuum Capability | High vacuum (base pressure <1×10⁻⁶ mbar with optional turbo pump) |
| Cooling | Forced gas quench or passive cooling |
| Control | Dual-sensor (thermocouple + pyrometer), digital PID, Ethernet-enabled PC interface |
| Gas Lines | Up to 5 independent channels with digital mass flow controllers (MFCs) |
| Chamber | Stainless steel cold-wall design with infrared halogen tubular lamps |
| Substrate Compatibility | Ø50–300 mm wafers and non-standard substrates (glass, metal, polymer, graphite, SiC susceptors) |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | AMETEK Princeton Applied Research |
|---|---|
| Origin | USA |
| Model | 4200A-SCS |
| DC I-V Range | 10 aA – 1 A, 0.2 µV – 210 V |
| C-V Frequency Range | 1 kHz – 10 MHz, ±30 V DC Bias |
| Pulsed I-V | ±40 V (80 V p-p), ±800 mA, 200 MSa/s, 5 ns Resolution |
| Compliance | ASTM F2679, ISO/IEC 17025, FDA 21 CFR Part 11 (with optional audit trail module) |
| Brand | AML |
|---|---|
| Origin | United Kingdom |
| Model | AWB-04, AWB-08, ROCK-04, ROCK-08 |
| Application | In-situ alignment, surface activation, wafer bonding, and nanoimprint lithography (NIL) |
| Compliance | Designed for Class 100 cleanroom integration |
| Control Architecture | Motorized precision stages with sub-micron alignment repeatability |
| Vacuum Compatibility | <5×10⁻⁶ mbar base pressure |
| Thermal Bonding Range | Ambient to 500 °C |
| Alignment Accuracy | ≤±25 nm (3σ, optical auto-alignment mode) |
| NIL Capability | Compatible with rigid and soft stamps |
| Brand | Alyxan |
|---|---|
| Origin | France |
| Model | PTR-FTICR MS |
| Mass Resolution | ≥10,000 (m/Δm, 50% valley) |
| Mass Accuracy | ≤0.015 u |
| Detection Limit | 100 ppt (v/v) for selected VOCs |
| Mass Range | 4–300 u |
| Magnetic Field Strength | 1.5 T |
| Vacuum Requirement | ≤1×10⁻⁹ Torr |
| Operating Temperature | 5–45 °C |
| Dynamic Range | 10⁴ |
| Dimensions | 65 × 72 × 104 cm |
| Weight | 150 kg |
| Ion Sources | H₃O⁺, O₂⁺, O⁻, CF₃⁺ (switchable proton-transfer reagent ions) |
| Sample Introduction | Membrane Inlet (MI), Headspace (solid/liquid) |
| Ionization Mode | Proton Transfer Reaction (PTR), optional EI/CI capability |
| Brand | SEN |
|---|---|
| Origin | Japan |
| Model | PM1103C |
| Type | Benchtop UV-Ozone Surface Cleaning System |
| Wavelengths | 185 nm and 254 nm |
| Lamp Type | Low-pressure mercury vapor lamp |
| Chamber Material | Stainless steel (electropolished) |
| Standard Chamber Volume | ~11 L |
| Power Supply | AC 100–120 V / 200–240 V, 50/60 Hz |
| Safety Interlock | Door-activated cut-off |
| Compliance | CE-marked, RoHS-compliant |
| Software Interface | Manual operation with analog timer (optional digital controller available) |
| Brand | JEOL |
|---|---|
| Origin | Japan |
| Model | JBX-9500FS |
| Acceleration Voltage | 100 kV |
| Maximum Substrate Size | 300 mm Ø wafers or 6-inch masks |
| Maximum Field Size | 1000 µm × 1000 µm |
| Stage Travel Range | 260 mm × 240 mm |
| Minimum Positioning Unit (LBC) | 0.15 nm (λ/4096) |
| Overlay Accuracy | ≤ ±11 nm |
| Field Stitching Accuracy | ≤ ±10 nm |
| In-Field Placement Accuracy | ≤ ±9 nm |
| Position DAC Resolution | 20-bit |
| Scan DAC Resolution | 14-bit |
| Scan Step Size | 0.25 nm |
| Maximum Scan Rate | 100 MHz |
| Electron Source | ZrO/W Schottky Emitter |
| Brand | JEOL (Japan Electron Optics Laboratory) |
|---|---|
| Origin | Japan |
| Model | JXA-iHP100 |
| Acceleration Voltage | 0–30 kV (0.1 kV step) |
| Beam Current Range | 10⁻¹² – 10⁻⁵ A |
| Beam Current Stability | ±5% / h, ±0.3% / 12 h (W) |
| Secondary Electron Resolution | 6 nm (W), 5 nm (LaB₆) at WD = 11 mm, 30 kV |
| Scan Magnification | ×40 – ×300,000 (WD = 11 mm) |
| Max. Image Resolution | 5,120 × 3,840 pixels |
| Display | Dual LCDs (1,280 × 1,024 each) for EPMA and SEM/EDS operation |
| Optical Microscope Resolution | ~1 µm |
| Depth of Field | ~1 µm |
| Vacuum System | Mechanical pump + turbomolecular pump + ion pump |
| Chamber Vacuum | <8.0 × 10⁻⁴ Pa |
| Gun Vacuum | <9.0 × 10⁻⁵ Pa |
| Elemental Detection Range | WDS: Be (optional) to U |
| EDS | B to U |
| WDS Wavelength Range | 0.087–9.3 nm |
| EDS Energy Range | 0–20 keV |
| WDS Spectrometer Channels | 1–5 (configurable) |
| EDS Detector | One SDD (Silicon Drift Detector), fanless option available |
| Max. Sample Size | 100 mm × 100 mm × 50 mm (H) |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | PlasmaPro 800 RIE |
| Category | Dry Process Equipment for Semiconductor Fabrication |
| Etching Principle | Reactive Ion Etching (RIE) with optional Plasma Enhanced (PE) mode |
| Substrate Compatibility | Up to 300 mm wafers and batch processing |
| Electrode Configuration | Large-area lower electrode with liquid cooling and/or resistive heating |
| Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) |
| Gas Delivery | Configurable gas cabinet with 4-, 8-, or 12-channel options |
| Vacuum System | Proximal turbomolecular pumping |
| Temperature Control | Precision substrate temperature regulation (±0.5 °C typical stability) |
| Compliance | Designed for GLP/GMP-aligned process documentation |
| Brand | SENTECH (Germany) |
|---|---|
| Origin | Germany |
| Model | Etchlab 200 |
| RF Power | 600 W @ 13.56 MHz |
| Vacuum System | 360 L/s Turbo-Molecular Pump + Rotary Vane Backing Pump |
| Wafer Capacity | Up to 200 mm (8-inch) |
| Gas Inlets | 2–12 Configurable Lines |
| Chamber Access | Top-Opening Lid Design |
| Footprint | Compact Benchtop Layout |
| Optional Add-ons | Residual Gas Analyzer (RGA), Optical Emission Spectroscopy (OES), Sample Temperature Control (SLI), High-Vacuum Pressure Monitoring (TP) |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | MDPspot |
| Type | Contactless, Microwave Photoconductance Decay (μ-PCD) Based Lifetime Tester |
| Sample Handling | Manual Z-axis adjustment (up to 156 mm height) |
| Measurement Mode | Single-point, non-contact, room-temperature operation |
| Material Compatibility | Crystalline and multicrystalline silicon wafers & bricks |
| Compliance | Designed for R&D and process monitoring in PV and semiconductor fabrication environments |
| Software | MDP Control Suite (Windows-based, real-time visualization, CSV export, GLP-compliant data logging) |
| Brand | AML |
|---|---|
| Origin | United Kingdom |
| Model | AWB-04 & AWB-08 Platform |
| Vacuum Base Pressure | ≤1×10⁻⁶ mbar |
| Maximum Bonding Force | 40 kN |
| Maximum Temperature | 560 °C |
| Anodic Bonding Voltage | 0–2.5 kV DC (up to 40 mA) |
| Alignment Accuracy | ±1 µm (in-situ, hot or cold) |
| Compatible Wafer Sizes | 2″, 3″, 4″, 5″, 6″, and 8″ |
| Bonding Environments | High vacuum, UHV (optional), controlled process gas (e.g., forming gas), or atmospheric inert gas |
| Optical System | Dual CCD microscope with through-the-lens illumination, visible + infrared imaging, real-time side-by-side wafer alignment display |
| Control Architecture | Fully automated PC-based system with recipe-driven operation, full parameter logging (voltage, current, integrated charge, temperature, pressure, force, separation, event timestamps), SPC-compliant data export, and remote diagnostic capability via secure network interface |
| Brand | Tops |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | TL-1 EX, TL-1 Plus |
| Laser Source | Pulsed Fiber Laser (Nd:YAG, 1064 nm) |
| Operation Mode | Q-switched Pulsed |
| Laser Pulse Width | Nanosecond Range |
| Beam Delivery | Precision Galvo Scanning System |
| Safety Class | Class 4 Laser Product (IEC 60825-1) |
| Compliance | CE, RoHS, FDA 21 CFR Part 1040.10 |
| Brand | PancanNano |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | SII |
| Product Type | High-Energy Single-Ion Implanter |
| Application Domain | IC & Quantum Device Fabrication |
| Implantation Energy | Custom-configurable per ion species (e.g., 1–100 keV) |
| Ion Dose Range | 1 to 10⁶ ions per site (single-ion counting mode) |
| Wafer Compatibility | Up to 150 mm (6″) substrates, compatible with diced chips and bulk crystals |
| Supported Ions | H⁺, N⁺, O⁺, Si⁺, P⁺, B⁺, As⁺, Te⁺, Ar⁺ (and other singly charged species via optional source modules) |
| Dimensions (L × W × H) | 2.4 m × 1.8 m × 2.2 m (fully shielded vacuum enclosure) |
| Brand | ULVAC KIKO |
|---|---|
| Origin | Japan |
| Model | CS-200Z |
| Configuration | Load-lock type, high-vacuum DC/RF magnetron sputtering system |
| Substrate Compatibility | Ti trays for Φ2″–Φ4″ wafers (max. Φ320 mm) and custom-shaped substrates (e.g., 50×50 mm²) |
| Control System | ULVAC GPCS-2700 integrated PLC + PC-based HMI (English interface) |
| Data Logging | Real-time parameter logging to PC with Excel export capability |
| Footprint | 1500 × 4500 mm (including service clearance) |
| Environment | Designed for Class 100–Class 1000 cleanroom integration |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | SpectraRay/4 |
| Spectral Range | Configurable per instrument integration (e.g., 190–1700 nm) |
| Spot Size | Instrument-dependent (typically 10–100 µm) |
| Incidence Angle | Adjustable (40°–90°, motorized goniometer support) |
| Measurement Speed | Up to 100 ms per spectrum (full spectral acquisition) |
| Single-Measurement Time | < 5 s (typical auto-alignment + acquisition + fit) |
| Sample Size Compatibility | Up to Ø300 mm wafers or custom substrates |
| Spectral Resolution | ≤ 1 nm (dependent on spectrometer configuration) |
| Thickness Measurement Accuracy | Sub-nanometer for single-layer SiO₂ on Si (calibration traceable to NIST standards) |
| Repeatability | ≤ ±0.05 nm (1σ, over 24 h, controlled environment) |
| Direct Reflectance Accuracy | ±0.2% absolute reflectance (NIST-traceable calibration source) |
| Brand | LaVision GmbH |
|---|---|
| Country of Origin | Germany |
| Model | TriM Scope |
| Scan Mode Flexibility | Single-beam to multi-beam configurable scanning |
| Software Control | ImSpector Pro with millisecond-scale region switching |
| Detection Channels | Up to 8 non-descanned detectors (NDDs) |
| Detector Options | Cooled Generation III GaAsP PMTs or APDs |
| Quantum Efficiency Gain | Up to 40% higher than standard PMTs |
| OPO Compatibility | Full integration support for optical parametric oscillator excitation sources |
| Brand | Diener |
|---|---|
| Origin | Germany |
| Model | Bell Jar 35 |
| Instrument Type | Imported Plasma Surface Treater |
| Chamber Volume | ~35 L |
| Chamber Material | Borosilicate Glass (Bell Jar: Ø315 mm × H500 mm) |
| Power Supply | 230 V / 16 A |
| RF Frequencies | 40 kHz (0–500 W), 13.56 MHz (0–300 W), DC/Unipolar Pulsed (0–300 W, up to 600 V) |
| Vacuum System | Compatible with Standard Rotary Vane or Dry Pumps (User-Specified) |
| Gas Control | Three Mass Flow Controllers (MFCs) |
| Substrate Holder | Ø140 mm (Optional Rotation, Heating, Cooling) |
| Pressure Measurement | Pirani Gauge |
| Control System | PCCE Software on Microsoft Windows XPe |
| Electrode Configuration | Switchable for Plasma Cleaning, Activation, Etching |
| Sputter Source | 2″–3″ with Shutter (Optional Exhaust Duct & Gas Inlet) |
| Additional Options | Faraday Cage, Plasma Polymerization Kit, TEM Flange, Corrosive-Gas-Compatible Design, Heated Chamber, Oxygen Generator, Slow Vent/Suction Modules, Maintenance & On-Site Installation Support |
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