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| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Instrument Type | Electrochemical CV Profiler |
| Carrier Concentration Range | 1×10¹¹ cm⁻³ to 1×10²¹ cm⁻³ |
| Depth Resolution | down to 1 nm |
| Measurable Depth Range | 1 nm – 10 µm |
| Sample Compatibility | Dry-in/Dry-out handling |
| Compliance | ASTM F1391, ISO/IEC 17025-aligned operation, GLP-supporting audit trail |
| Brand | Rayscience |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Instrument Type | Electrochemical Capacitance–Voltage Profiling System |
| Application Domain | Semiconductor Doping Profile Characterization |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Sample Compatibility | Wafer-scale (up to 300 mm), micro-samples, epitaxial layers, bulk crystals |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21_ray |
| Instrument Type | Electrochemical Capacitance-Voltage Profiling System |
| Sample Compatibility | Semiconductor wafers (Si, Ge, SiC, GaN, InP, AlGaN, ZnO, CdTe, HgCdTe, etc.) |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| System Architecture | Modular, cleanroom-compatible, fully automated electrochemical etching & CV scanning platform |
| Software Control | Integrated real-time etch monitoring, CV sweep automation, profile reconstruction, GLP-compliant data logging |
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