Empowering Scientific Discovery

Ultrafast Technologies (Hong Kong) Limited

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BrandMVSystems
OriginUSA
ModelCluster
Substrate Size30 × 40 cm
Chamber Configuration8-port cluster architecture
Deposition MethodsPlasma-Enhanced CVD (PECVD), Hot-Wire CVD (HWCVD), DC/RF Sputtering
Control SystemFully computer-integrated with programmable process sequencing
CategoryCluster-Type Thin-Film Deposition System
Import StatusImported Equipment
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BrandMVSystems
OriginUSA
ModelSiNx-PECVD
Throughput>475 wafers/hr
SiNx Film Uniformity<5% (1σ, across 156 mm × 156 mm wafer)
Deposition TechnologyRF (13.56 MHz) Plasma-Enhanced CVD
Precursor GasesSilane (SiH₄) and Ammonia (NH₃)
Substrate Temperature200–400 °C
Chamber ConfigurationSingle-wafer, Load-lock compatible
Process ControlFully automated recipe-based operation with real-time RF power, pressure, and gas flow monitoring
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BrandMVSystems
OriginUSA
ModelReel-to-Reel Cassette System
Web Width15 cm – 30 cm
Process CapabilitiesPECVD, HWCVD, Sputtering
PatentUS Patent No. 6,258,408B1
Architecture8-Port Cluster Tool with Robotic Cassette Transport
ControlFully Computer-Controlled
Chamber IndependenceIndividual Chamber Servicing Enabled
Cross-Contamination MitigationCassette-Based Isolation Between Process Steps
ComplianceDesigned for GLP/GMP-aligned thin-film R&D environments
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BrandMVSystems
OriginUSA
ModelMVS-PECVD
PriceUSD $1,000,000
Chamber ConfigurationModular Cluster Tool (8–10 port), In-Line, or Single-Chamber Options
Substrate CompatibilityRigid (15.6×15.6 cm, 30×40 cm) and Flexible Web (15–30 cm width)
Deposition TechnologiesPECVD, HWCVD, Sputtering, Annealing
Vacuum ArchitectureHigh-Vacuum (≤1×10⁻⁷ Torr base pressure)
Process ControlFully Computer-Controlled with Real-Time Parameter Logging
In-Situ Characterization OptionIntegrated UHV-compatible optical/electrical test module
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