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| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Heating Method | Hot-Wall |
| Deposition Rate | 1 nm/s (typical, process-dependent) |
| Base Vacuum | ≤1×10⁻⁶ Torr |
| Operating Pressure Range | 2–200 mTorr |
| Chamber Internal Diameter | 6-inch (152 mm) |
| Substrate Compatibility | Up to 8-inch wafers |
| Application Domain | Semiconductor Thin-Film Fabrication |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Pumping Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint monitoring |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based PC control with recipe management and audit trail logging |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis motion |
| Max. Continuous Process Duration | ≥3 weeks |
| Temperature Control | Precision ±1°C over full operating range |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ≤1.5% (across 8-inch wafer) |
| Dimensions | 78 × 56 × 28 cm |
| Thermal Wall | 300 °C aluminum heated chamber |
| Precursor Bottle Temp | up to 175 °C |
| Transport Line Temp | up to 200 °C |
| Plasma Option | ICP-based, 13.56 MHz, 300 W, air-cooled |
| MFC-Controlled Gas Lines | 4 (3 process gases + 1 carrier) |
| Vacuum Interface | Standard CF-40 flanges |
| Compatible With | In-situ metrology modules, powder deposition kits, load-lock, QCM thickness monitoring, ozone generator |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | MILA-5000 |
| Instrument Type | General-Purpose Vacuum Rapid Thermal Annealer |
| Sample Diameter | 2-inch (50.8 mm) |
| Temperature Range | 0–1200 °C |
| Maximum Heating Rate | 150 K/s |
| Maximum Cooling Rate | 200 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | TCN-2ω |
| Measurement Principle | 2ω Lock-in Thermography (Cross-Plane Thermal Conductivity) |
| Temperature Range | Ambient (23 ± 2 °C) |
| Sample Dimensions | 10–20 mm (L) × 10 mm (W) × 0.3–1 mm (total thickness, including substrate) |
| Substrate Options | Si (recommended), Ge, Al₂O₃ |
| Metal Transducer Film | Au, 100 nm thick, 1.7 mm × 15 mm |
| Thermal Conductivity Range | 0.1–10 W·m⁻¹·K⁻¹ |
| Atmosphere | Ambient air |
| Compliance | ISO/IEC 17025-aligned methodology, compatible with GLP documentation workflows |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Premium |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6") / 200 mm (8") / 300 mm (12") wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/s (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Base Pressure | ≤ 1 × 10⁻⁶ hPa (with turbo-molecular pump and load-lock) |
| Heating Configuration | Dual-side (top & bottom) halogen lamp array |
| Susceptor Materials | Graphite or SiC-coated graphite |
| Process Atmosphere | Inert (N₂, Ar), oxidizing (O₂), reducing (H₂/N₂), or vacuum |
| Standard Temperature Monitoring | Dual-channel pyrometry + optional thermocouple |
| Control System | SIMATIC S7-based PLC with 7" HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch) |
| Temperature Range | Up to 1200 °C (standard), up to 1300 °C (optional high-temp configuration) |
| Max. Heating Rate | 160 K/s |
| Max. Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Lamp Configuration | 18 high-power infrared lamps (34 kW total) |
| Chamber Dimensions | Ø200 mm × 25 mm |
| Temperature Sensing | Dual-range pyrometry (400–1100 °C & 400–1500 °C) + K-type thermocouple |
| Controller | Digital PID with real-time thermal profiling |
| Footprint | 510 mm × 1425 mm × 800 mm |
| Weight | 240 kg |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | Zenith-100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 6-inch (150 mm) |
| Temperature Range | 0–2000 °C |
| Maximum Heating Rate | 150 °C/s |
| Maximum Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Chamber | Stainless steel, water-cooled, cold-wall design |
| Heating Elements | High-purity tungsten |
| Atmosphere Compatibility | Vacuum, inert (N₂, Ar), or reducing (H₂/N₂) |
| Standard Temperature Sensors | Dual-mode — calibrated pyrometer (for >600 °C) and type C thermocouple (for full range) |
| Control System | Fast-response digital PID controller with real-time thermal profile logging |
| Vacuum Requirement | Turbo-molecular pump mandatory (roughing pump included) |
| Optional Upgrades | Automated pressure control with throttle valve, SiC- or graphite-coated susceptors, CVD-compatible gas inlets |
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | 4-channel MFC-controlled process gas lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-master |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 200 mm (8-inch wafers) |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Gas Lines | 4-channel MFC-controlled (N₂, Ar, O₂, custom mix) |
| Heating Source | Halogen infrared lamps with power-based regulation |
| Chamber | Water-cooled quartz tube with double-wall stainless-steel cold-wall construction |
| Temperature Monitoring | Dual K-type thermocouples + dual pyrometers (low-range: 150–1100 °C |
| high-range | 400–1500 °C) |
| Cooling Method | Forced-air (low-noise, no compressed air required for thermal cycling) |
| Power Supply | 3×400 V + N + PE, 75–105 kW |
| Cooling Water | 2–4 bar, ΔP ≤1 bar, flow rate 30–50 L/min |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Micro |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Size | 3-inch (76 mm) diameter or square |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Heating Source | IR Halogen Lamps |
| Cooling Method | Forced-air (low-noise, no compressed air required) |
| Chamber Design | Dual-chamber optional |
| Vacuum Capability | Compatible with turbomolecular pump for ≤10⁻⁶ mbar base pressure |
| Control Interface | Ethernet-connected PC software with full PID programmability |
| Gas Handling | Up to 3 process gases, digitally controlled mass flow controllers (MFCs) |
| Thermocouple Configuration | Dual N-type (center + edge) for direct wafer-temperature feedback |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | JetLight |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | Up to 3-inch (76 mm) diameter wafers |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Control Interface | Ethernet-connected PC-based software with programmable ramp/soak profiles |
| Chamber Design | Dual-chamber option available |
| Heating Source | Array of IR halogen lamps with power-controlled (not voltage-controlled) regulation |
| Cooling Method | Forced-air cooling (low-noise, no compressed air required) |
| Chamber Material | Quartz tube within double-walled stainless-steel cold-wall structure with water-cooled jacket |
| Thermocouple Configuration | Dual N-type thermocouples — center and edge mounted for direct wafer-temperature feedback |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) and precision needle valves |
| Optional Accessories | SiC-coated graphite susceptor, high-vacuum turbomolecular pump, dual-chamber configuration |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch) |
| Temperature Range | Up to 1200 °C |
| Max. Heating Rate | 160 K/s |
| Max. Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | 10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Standard Optical Viewport | Fused silica |
| Thermometry | Dual-range pyrometer (150–1100 °C and 400–1500 °C), K-type thermocouple backup |
| Control System | Digital PID with real-time feedback loop |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Lines | 4–10 channels |
| Uniformity | <1.5% (RMS, Al₂O₃ on 4″ Si wafer) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Brand | AML |
|---|---|
| Origin | United Kingdom |
| Model Series | AWB-04, AWB-08, ROCK-04, ROCK-08 |
| Maximum Wafer Size | 200 mm |
| Heating Range | Up to 650 °C |
| Bonding Chamber Vacuum | ≤1 × 10⁻⁵ mbar (with turbomolecular pump) |
| Control Interface | Windows-based HMI with full process logging |
| Compliance | Designed for GLP/GMP-aligned R&D and pilot-line environments |
| Automation Level | Semi-automatic (manual load/unload, fully automated alignment, activation, and bonding) |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q240 |
| Plasma Source | 2.45 GHz microwave, 1200 W |
| Chamber | Quartz, Ø240 mm × 460 mm (21 L), max. 200 mm wafer capacity |
| Dimensions (L×W×H) | 760 × 775 × 775 mm |
| Gas Control | 3-channel digital MKS mass flow controllers |
| Vacuum Door | Drawer-type with UV/microwave-shielded viewport |
| Human-Machine Interface | 10.4" touchscreen GUI, Windows CE OS |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | AL8 |
| Plasma Source | 2.45 GHz microwave, 600 W |
| Chamber Volume | 18 L (250 × 250 × 290 mm, aluminum) |
| External Dimensions | 530 × 600 × 550 mm |
| Gas Delivery | 1 standard mass flow-controlled line (MKS digital controller) |
| Vacuum Door | Hinged with UV- and microwave-shielded viewport |
| Control Interface | 7" GUI touchscreen, Windows CE OS |
| Optional | Dry pump system, tri-color status tower light, up to 4 gas lines, ECR-enhanced plasma source, motorized rotating stage (Ø200 mm, variable speed) |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q150, Q235, Q240, Q310 |
| Type | Microwave-excited Capacitively Coupled Plasma (CCP) Resist Stripping System |
| Application Domain | Semiconductor Front-End-of-Line (FEOL) & Back-End-of-Line (BEOL) Process Cleaning |
| Compliance | CE-marked, SEMI S2-0216 Certified, ISO 9001:2015 Manufactured |
| Footprint Options | Benchtop (Q150), Semi-automated Loadlock (Q235/Q240), Full-automated Cluster Tool Integration Capable (Q310) |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q235/Q240 |
| Plasma Source | 2.45 GHz microwave, 600 W |
| Chamber Material | Quartz |
| Chamber Dimensions | Ø235 mm × 260 mm L |
| Maximum Wafer Size | 200 mm (8") |
| Footprint | 460 mm × 590 mm × 550 mm H |
| Gas Inlets | Standard 2-channel with digital MKS mass flow controllers |
| Chamber Door | Drawer-type with UV- and microwave-shielded viewport |
| Human-Machine Interface | 7" resistive touchscreen GUI running Windows CE |
| Optional | Dry pump package (with foreline trap & vibration isolation), Faraday cage, quartz boat, tri-color status beacon, up to 4 gas lines, export-grade crating and freight logistics |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 1000 |
| Voltage Range | ±12 V (expandable to ±10 kV) |
| Frequency Range | 0.01 Hz – 1 kHz |
| Fatigue Test Frequency | up to 50 kHz |
| Minimum Pulse Width | 20 µs |
| Output Impedance | 50 Ω |
| Max Capacitive Load | 100 nF |
| Output Current | ±50 mA |
| Current Amplification Range | 1 nA – 1 A |
| Brand | aixACCT |
|---|---|
| Origin | Germany |
| Model | TF Analyzer 2000E |
| Voltage Range | ±25 V (extendable to ±10 kV) |
| Hysteresis Frequency | 0.001 Hz – 5 kHz |
| Minimum Pulse Width | 2 µs |
| Minimum Rise Time | 1 µs |
| Current Measurement Range | 1 pA – 1 A |
| Maximum Load Capacitance | 1 µF |
| Peak Output Current | ±1 A |
| Module Options | FE (Ferroelectric), MR (Magnetoresistive), RX (Relaxation Current), DR (Dielectric Retention) |
| Channel Capacity | 256-channel automated testing |
| Brand | Alpha Plasma |
|---|---|
| Origin | Germany |
| Model | Q235 (Q-Series) |
| Type | Benchtop Microwave Plasma Asher/Stripper |
| Application Domain | Semiconductor Fabrication, MEMS Processing, R&D Cleanroom Environments |
| Compliance | CE-marked, ISO 14644-1 Class 5 compatible installation, ESD-safe chamber design |
| Power Supply | 230 V AC, 50/60 Hz, 16 A |
| Microwave Frequency | 2.45 GHz |
| Max Chamber Volume | 12 L |
| Process Gas Compatibility | O₂, CF₄, SF₆, Ar/O₂ mixtures |
| Vacuum System | Integrated dry scroll pump (base pressure < 5 × 10⁻² mbar) |
| RF/Plasma Monitoring | Real-time forward/reflected power metering with auto-tuning impedance matching network |
| Brand | aixACCT Systems GmbH |
|---|---|
| Model | ESPY31 |
| Origin | Germany |
| Core Principle | Direct quasi-static force–charge transduction under controlled mechanical loading |
| Measurement Standards | Traceable to PTB (Physikalisch-Technische Bundesanstalt) calibration protocols |
| Key Specifications | d₃₁/d₃₂ range: 0.05–2000 pC/N |
| Force resolution | 0.1 mN (static/dynamic) |
| Current resolution | 100 fA |
| Charge accuracy | sub-pC |
| Repeatability (PVDF) | < 0.03 pC/N (1σ) |
| Reproducibility (PVDF) | < 0.1 pC/N |
| Frequency range | 0.1–500 Hz |
| Static preload | 0.1–5 N |
| Dynamic load | 0–1000 mN |
| Sample dimensions | 4.5 mm × 2 mm, thickness 10 µm–1 mm |
| Environmental operation | −20 °C to +80 °C, 10–85 % RH |
| Compliance | ASTM D790, ISO 6722, IEC 62047-23, USP <1051>, GLP-compliant data audit trail |
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