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| Brand | Angstrom |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | LEED 800 |
| Pricing | Upon Request |
| Brand | Angstrom |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported Instrument |
| Model | ELS5000 |
| Pricing | Upon Request |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported Instrument |
| Model | LUMO |
| Pricing | Upon Request |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | RVL2000 |
| Pricing | Upon Request |
| Brand | PHI |
|---|---|
| Origin | Japan |
| Model | Genesis 500 |
| Type | Fully Automated Scanning Focused XPS System |
| Sample Stage | Motorized 3-Position Carousel (80 mm × 80 mm trays) |
| Microprobe Spot Size | ≤ 5 µm |
| Depth Profiling | Integrated High-Performance Ar⁺ Ion Gun + Dual-Beam Charge Neutralization |
| Optional Techniques | UPS, LEIPS, REELS, AES, HAXPES, GCIB Sputtering |
| Software Platform | PHI SmartSoft Suite with GLP/GMP-Compliant Audit Trail & 21 CFR Part 11 Support |
| Compliance | ASTM E1521, ISO 18118, ISO 21365, USP <1057>, IEC 62304 |
| Brand | PHI |
|---|---|
| Origin | Japan |
| Model | PHI 700 |
| Type | Scanning Auger Electron Spectrometer |
| Detection Principle | Auger Electron Spectroscopy (AES) |
| Spatial Resolution | <10 nm (beam diameter) |
| Energy Resolution | ≤0.3% at E₀ = 1 keV |
| Ion Sputtering Energy Range | 0.1–5 keV |
| Maximum Magnification | >500,000× |
| Depth Profiling Capability | Sub-nanometer to several micrometers |
| Sample Stage | High-precision motorized XYZ + tilt/rotation |
| Vacuum System | Ultra-high vacuum (UHV), base pressure ≤2×10⁻¹⁰ Torr |
| Brand | Makeway |
|---|---|
| Origin | Shanghai, China |
| Model | MKW-5250 |
| Energy Resolution | 40 meV |
| X-ray Source | Al Kα (1486.6 eV) |
| Spatial Resolution | ≤ 5 µm (focused monochromated beam) |
| Analysis Area | Up to 300 µm × 300 µm |
| Detection Sensitivity | 11,800 kcps (for C 1s at pass energy 20 eV) |
| Sample Stage | Motorized XYZ + tilt/rotation |
| Compatible Techniques | XPS, UPS, LEIPS, REELS, AES, HAXPES (with optional Cr/Mg anode), GCIB depth profiling, angle-resolved XPS (AR-XPS) |
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