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| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Implant Energy | 50 keV |
| Wafer Size | 8–12 inch |
| Implant Species | p⁺ (proton) |
| Ion Source Options | Liquid Metal Ion Source (LMIS), Plasma Ion Source |
| Beam Current | sub-femtoampere (fA) range |
| Positioning Accuracy | < 10 nm |
| Detection Efficiency | ≥ 98% |
| Compliance | ISO 14644-1 Class 4 cleanroom compatible, CE-marked, RoHS compliant |
| Brand | IBS |
|---|---|
| Origin | France |
| Model | IMC210 |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Semiconductor Doping |
| Implant Energy | 50 keV (adjustable 20–200 keV, upgradable to 3 keV or 400/600 keV for multiply charged ions) |
| Wafer Size Compatibility | 8-inch and 12-inch wafers (backward-compatible with 6-inch, 2–5-inch, and irregular substrates down to 1 cm²) |
| Implant Species | p⁺ (e.g., ¹¹B, ³¹P, ⁷⁵As), Al⁺, H⁺, N⁺, He⁺, Ar⁺ |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% 1σ (measured on 6″ Si wafers with 100 nm SiO₂, ¹¹B⁺ at 100 keV, 1×10¹⁴ atoms/cm²) |
| Vacuum | Ion source <2×10⁻⁶ mbar |
| Gas Delivery | Integrated 5-channel system (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder endpoint detection |
| Brand | ULVAC KIKO |
|---|---|
| Origin | Japan |
| Model | IMX-350 |
| Product Type | Low-Energy, High-Beam-Current Implanter |
| Implantation Energy | 50 keV |
| Dose Range | 1×10¹⁶ ions/cm² |
| Wafer Size | 6-inch |
| Implant Species | p⁺ (Boron, Phosphorus, Arsenic compatible) |
| Beam Current Capability | High-current configuration |
| Ion Source Options | Liquid Metal Ion Source (LMIS), Dual Plasma Source (for O⁺, N⁺), Mass Analyzer Column |
| Imaging Resolution | 4 nm (dual-beam SEM column) |
| Positioning Accuracy | ≤20 nm (with piezo-driven stage and 1 nm optical encoder) |
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