- All
- Favorite
- Popular
- Most rated
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, dry-in/dry-out handling, and camera-assisted process control |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Measurement Principle | Electrochemical C–V Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI semiconductors |
| Automation Level | Fully Automated (Dry-In/Dry-Out, Auto-Load/Unload/Reload) |
| System Architecture | Modular, Cleanroom-Compatible, Optically & Electrically Isolated Subsystems |
Show next